Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPL65R420E6AUMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 4; Case Connection: DRAIN;
215 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
.42 ohm
METAL-OXIDE SEMICONDUCTOR
S-PSSO-N4
2A
1
4
ENHANCEMENT MODE
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
N-CHANNEL
26 A
YES
NO LEAD
SINGLE
SWITCHING
SILICON
IPL65R660E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 650 V; Terminal Form: NO LEAD; Package Shape: SQUARE;
142 mJ
.66 ohm
16 A
IPP039N04LGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSFM-T3;
LOGIC LEVEL COMPATIBLE
60 mJ
40 V
80 A
.0052 ohm
TO-220AB
R-PSFM-T3
3
RECTANGULAR
FLANGE MOUNT
400 A
NO
THROUGH-HOLE
IPP041N04NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 80 A; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
.0041 ohm
IPP054NE8NGHKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
826 mJ
85 V
100 A
.0054 ohm
IPP057N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 80 V;
210 mJ
80 V
.0057 ohm
175 Cel
150 W
320 A
FET General Purpose Power
IPP084N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 50 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
43 mJ
60 V
50 A
.0084 ohm
200 A
IPP084N06L3GXKSA1
Infineon Technologies' IPP084N06L3GXKSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 0.0084 ohm RDS(on), and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 79W.
e3
79 W
TIN
IPP093N06N3GHKSA1
IPP093N06N3GHKSA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0093 ohm RDS(on), and 200A IDM. Ideal for switching applications due to its single configuration with built-in diode. Utilizes metal-oxide semiconductor technology in a rectangular package shape.
AVALANCHE RATED
.0093 ohm
IPP100N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 80 V;
90 mJ
70 A
.01 ohm
280 A
IPP26CN10NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-220AB;
65 mJ
100 V
35 A
.026 ohm
140 A
IPP50R250CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 345 mJ; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
345 mJ
ISOLATED
500 V
13 A
.25 ohm
31 A
IPP80CN10NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
17 mJ
.08 ohm
52 A
ITD50N04S4L04ATMA1
Infineon ITD50N04S4L04ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 50A ID, and 0.004 ohm RDS(on). Commonly used in automotive applications due to AEC-Q101 standard compliance.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
.004 ohm
TO-252
R-PSSO-G4
2
AEC-Q101
GULL WING
SPB160N04S203CTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 160 A; Maximum Pulsed Drain Current (IDM): 640 A; No. of Elements: 1;
810 mJ
160 A
.0029 ohm
R-PSSO-G6
6
640 A
SPB160N04S2L03DTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
.0037 ohm
SPP15P10PGHKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .24 ohm; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
230 mJ
15 A
.24 ohm
P-CHANNEL
60 A
SPP15P10PLGHKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.2 ohm
SPP18P06PHKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: .13 ohm; JESD-30 Code: R-PSFM-T3;
150 mJ
18.6 A
.13 ohm
NOT SPECIFIED
74.4 A
SPP20N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 600 V;
690 mJ
600 V
20 A
.19 ohm
40 A
SPP80N03S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
325 mJ
30 V
.0075 ohm
IPD50R280CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Terminals: 2; JEDEC-95 Code: TO-252;
231 mJ
.28 ohm
R-PSSO-G2
42.9 A
IPD60R380E6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;
.38 ohm
30 A
IPD70R2K0CEAUMA1
IPD70R2K0CEAUMA1 by Infineon Technologies is a N-CHANNEL FET with 700V DS breakdown voltage, 6.3A IDM, and 2 ohm RDS(on). It is used for switching applications in enhancement mode with built-in diode. The transistor features a gull wing terminal form, operates in avalanche energy rating of 11mJ, and has a small outline package style.
11 mJ
700 V
2 ohm
260
6.3 A
30
AUIRFR2607ZTRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Reference Standard: AEC-Q101; Case Connection: DRAIN;
ULTRA LOW RESISTANCE
96 mJ
75 V
42 A
.022 ohm
TO-252AA
180 A
IRFH7885TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0039 ohm; Minimum DS Breakdown Voltage: 80 V;
202 mJ
22 A
.0039 ohm
R-PDSO-N5
5
250 A
DUAL
IRFH7187TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
493 mJ
18 A
.006 ohm
210 A
AUIRFS4127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Reference Standard: AEC-Q101; Minimum Operating Temperature: -55 Cel;
FAST SWITCHING, ULTRA-LOW RESISTANCE
250 mJ
200 V
72 A
TO-263AB
-55 Cel
375 W
300 A
AUIRFZ44VZSTRL
AUIRFZ44VZSTRL by Infineon Technologies is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 230A and EAS of 73mJ, suitable for high-power operations. With a low 0.012 ohm RDS(on), this MOSFET offers efficient performance in ENHANCEMENT MODE operation.
73 mJ
57 A
.012 ohm
230 A
IRFH7182TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 320 A;
728 mJ
23 A
AUIRFSA8409-7P
AUIRFSA8409-7P by Infineon is a N-channel Power FET with 40V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 1440A and an operating temperature range from -55 to 175°C. The transistor has a built-in diode, Gull Wing terminal form, and small outline package style.
1450 mJ
360 A
.00069 ohm
1440 A
AUIRFP4310Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Additional Features: ULTRA LOW RESISTANCE;
355 mJ
120 A
TO-247AC
480 A
IRFH7882TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Transistor Application: SWITCHING;
704 mJ
.0031 ohm
290 A
IPA80R450P7XKSA1
Infineon's IPA80R450P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, 0.45 ohm RDS(on), and 29A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 29mJ.
29 mJ
800 V
.45 ohm
29 A
IPA65R650CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Minimum DS Breakdown Voltage: 650 V; Maximum Drain-Source On Resistance: .65 ohm;
10.1 A
.65 ohm
150 Cel
-40 Cel
28 W
IPD60R460CEAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 26 A; Minimum DS Breakdown Voltage: 600 V;
185 mJ
.46 ohm
IPP60R099P6XKSA1
Infineon's IPP60R099P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 109A IDM, 796mJ EAS, and 0.099ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 278W and can handle up to 37.9A ID.
796 mJ
37.9 A
.099 ohm
278 W
109 A
IPS60R650CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 82 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
133 mJ
9.9 A
TO-251
R-PSIP-T3
IN-LINE
82 W
19 A
IPS70R1K4CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; Maximum Pulsed Drain Current (IDM): 8.3 A; JEDEC-95 Code: TO-251;
26 mJ
5.4 A
1.4 ohm
53 W
8.3 A
IPZ60R017C7XKSA1
IPZ60R017C7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 495A IDM and 0.017 ohm RDS(on). The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 446W and an operating temp range from -55 to 150°C.
582 mJ
.017 ohm
TO-247
R-PSFM-T4
446 W
495 A
IPAW60R190CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Terminal Form: THROUGH-HOLE; Maximum Operating Temperature: 150 Cel;
418 mJ
26.7 A
34 W
59 A
IPT65R033G7XTMA1
IPT65R033G7XTMA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, 245A pulsed drain current, and 0.033 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 391W.
289 mJ
69 A
.033 ohm
R-PSSO-F3
391 W
245 A
FLAT
IPD65R600C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 650 V;
.6 ohm
IPP80N06S209AKSA2
IPP80N06S209AKSA2 by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.0091 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
370 mJ
55 V
.0091 ohm
IRF200S234
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 417 W; Avalanche Energy Rating (EAS): 693 mJ; Transistor Application: SWITCHING;
693 mJ
90 A
.0169 ohm
417 W
312 A
IPB120N06S403ATMA2
IPB120N06S403ATMA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 480A IDM, and 0.0028 ohm RDS(on). It's used in power applications due to its EAS of 392mJ, AEC-Q101 standard compliance, and -55°C min operating temp.
392 mJ
.0028 ohm
IPI50R399CPXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .399 ohm;
9 A
.399 ohm
TO-262AA
IPI120N08S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
GREEN
920 mJ
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