Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPA60R800CEXKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 15.7 A; Avalanche Energy Rating (EAS): 72 mJ;
72 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
600 V
.8 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
15.7 A
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IRF8910GTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 8; JEDEC-95 Code: MS-012AA;
19 mJ
20 V
10 A
.0134 ohm
MS-012AA
R-PDSO-G8
8
150 Cel
SMALL OUTLINE
82 A
YES
GULL WING
DUAL
BSC0996NSATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 52 A;
10 mJ
DRAIN
34 V
8.5 A
.012 ohm
R-PDSO-F8
-55 Cel
52 A
FLAT
IPA60R280CFD7XKSA1
Infineon's IPA60R280CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 31A IDM, 36mJ EAS, and 0.28ohm RDS(on). With a PLASTIC/EPOXY body and THROUGH-HOLE terminals, it operates in ENHANCEMENT MODE at -55°C to deliver high performance.
36 mJ
6 A
.28 ohm
31 A
IPA60R280P7SXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .28 ohm; Maximum Pulsed Drain Current (IDM): 36 A; Transistor Application: SWITCHING;
38 mJ
36 A
IPA60R600P7XKSA1
Infineon's IPA60R600P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage and 0.6 ohm max RDS. Ideal for switching applications, it has 16A IDM and 17mJ EAS ratings. The transistor operates in enhancement mode with a silicon element material, suitable for isolated case connections.
17 mJ
.6 ohm
16 A
IPAN70R600P7SXKSA1
Infineon's IPAN70R600P7SXKSA1 is a N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 20.5A and 0.6 ohm RDS(on), this MOSFET operates in enhancement mode with a temperature range of -40°C. Its package style is flange mount, making it suitable for various power applications.
700 V
20.5 A
IPAN80R360P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
34 mJ
800 V
.36 ohm
34 A
IPU50R950CEAKMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain-Source On Resistance: .95 ohm; Package Style (Meter): IN-LINE;
68 mJ
500 V
.95 ohm
TO-251AA
R-PSIP-T3
IN-LINE
12.8 A
IPU60R1K0CEAKMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
46 mJ
6.8 A
1 ohm
TO-251
61 W
12 A
IPA60R400CEXKSA1
Infineon's IPA60R400CEXKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Featuring a single configuration with built-in diode, it offers 0.4 ohm max RDS(on) and 30A IDM. Operating in enhancement mode, this MOSFET has an EAS of 210mJ and -40°C min temp.
210 mJ
.4 ohm
30 A
IPS80R2K0P7AKMA1
Infineon's IPS80R2K0P7AKMA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 6A IDM and 6mJ EAS ratings. This MOSFET operates in enhancement mode at -55°C, with a max RDS(on) of 2 ohm for efficient power management.
6 mJ
2 ohm
IPS80R2K4P7AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JEDEC-95 Code: TO-251; Minimum Operating Temperature: -55 Cel;
4 mJ
2.4 ohm
5.3 A
IRLS4030TRL7PP
IRLS4030TRL7PP by Infineon Technologies is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 750A and EAS of 320mJ, making it suitable for high-power operations. With 0.0039 ohm RDS(on) and SILICON technology, this transistor offers efficient performance in ENHANCEMENT MODE operation.
320 mJ
100 V
190 A
.0039 ohm
R-PSSO-G6
6
260
P-CHANNEL
750 A
MATTE TIN OVER NICKEL
30
IPD70R950CEAUMA1
IPD70R950CEAUMA1 by Infineon is a N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. It features a built-in diode, 12A pulsed drain current, and 0.95 ohm max RDS(on). The transistor operates in enhancement mode and has a small outline package style for surface mount assembly.
50 mJ
TO-252
R-PSSO-G2
2
IPU80R3K3P7AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 3.8 A; JESD-609 Code: e3; JESD-30 Code: R-PSIP-T3;
2 mJ
3.3 ohm
3.8 A
IPU80R600P7AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): IN-LINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
20 mJ
NOT SPECIFIED
22 A
IPS70R950CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; Terminal Finish: TIN; JESD-609 Code: e3;
IPB60R230P6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Minimum Operating Temperature: -55 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
352 mJ
.23 ohm
TO-263AB
48 A
IPB60R330P6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
247 mJ
.33 ohm
TO-236AB
33 A
IPSA70R1K4CEAKMA1
IPSA70R1K4CEAKMA1 by Infineon is a N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. It features 8.3A max pulsed drain current and 26mJ avalanche energy rating, operating in enhancement mode. With a package style of IN-LINE and through-hole terminals, it offers high power dissipation up to 53W at temperatures ranging from -40°C to 150°C.
26 mJ
5.4 A
1.4 ohm
53 W
8.3 A
IPSA70R2K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-251; No. of Elements: 1; Transistor Application: SWITCHING;
11 mJ
6.3 A
IPSA70R600CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
55 mJ
18 A
IPZA60R037P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 295 mJ; No. of Elements: 1;
295 mJ
.037 ohm
TO-247
R-PSFM-T4
4
280 A
IPZA60R060P7XKSA1
Infineon's IPZA60R060P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 151A IDM, 159mJ EAS, and 0.06ohm RDS(on). Package style is flange mount with through-hole terminals.
159 mJ
.06 ohm
151 A
IPZA60R080P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Position: SINGLE; No. of Terminals: 4;
118 mJ
.08 ohm
110 A
IPZA60R099P7XKSA1
Infineon's IPZA60R099P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it has a max pulsed drain current of 100A and low on-resistance of 0.099 ohm. This MOSFET operates in enhancement mode and can handle an avalanche energy rating of 105mJ.
105 mJ
.099 ohm
100 A
IPZA60R180P7XKSA1
Infineon's IPZA60R180P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 53A IDM and 0.18 ohm RDS(on). This rectangular package transistor has a flange mount style and withstands temperatures as low as -55°C.
56 mJ
.18 ohm
53 A
IPA60R360P7XKSA1
Infineon's IPA60R360P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a max pulsed drain current of 26A and 0.36 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has an avalanche energy rating of 27mJ.
27 mJ
26 A
IPA70R750P7SXKSA1
Infineon's IPA70R750P7SXKSA1 is a N-CHANNEL FET with 700V DS breakdown voltage and 0.75 ohm RDS(on). Ideal for SWITCHING applications, it has 15.4A IDM, operates in ENHANCEMENT MODE, and features a built-in DIODE. Suitable for various industries due to its robust design and high performance.
.75 ohm
15.4 A
IPA70R900P7SXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Case Connection: ISOLATED; Terminal Position: SINGLE;
.9 ohm
IPP60R099P7XKSA1
IPP60R099P7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for switching applications, it has a max IDM of 100A and RDS(on) of 0.099 ohm. This MOSFET operates in enhancement mode and features a built-in diode, making it suitable for high-power applications.
IPP60R280P7XKSA1
IPP60R280P7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 36A and 0.28 ohm RDS(on). The transistor operates in enhancement mode and features a built-in diode, making it suitable for high-power circuits.
IPP60R600P7XKSA1
Infineon's IPP60R600P7XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 16A IDM and 0.6 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures from -55 to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
30 W
IPP80R360P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
IPP80R600P7XKSA1
IPP80R600P7XKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 22A and an avalanche energy rating of 20mJ.
IPP80R750P7XKSA1
IPP80R750P7XKSA1 by Infineon is a N-CHANNEL FET with 800V DS breakdown voltage, 17A IDM, and 0.75 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor's package is rectangular with through-hole terminals and can handle an EAS of 16mJ.
16 mJ
17 A
IPA60R125P6XKSA1
Infineon's IPA60R125P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 87A IDM and 0.125ohm RDS(on), it operates in enhancement mode with 636mJ EAS rating. The transistor has a plastic/epoxy body, single configuration with built-in diode, and through-hole terminals.
636 mJ
.125 ohm
87 A
IPA80R1K2P7XKSA1
Infineon's IPA80R1K2P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring 11A IDM and 10mJ EAS, this MOSFET operates in enhancement mode with a max RDS(on) of 1.2 ohm. Suitable for flange mount installations, it has a plastic/epoxy body and isolated case connection.
1.2 ohm
11 A
IPAW60R600P7SXKSA1
Infineon's IPAW60R600P7SXKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 16A IDM and 17mJ EAS, this transistor operates in ENHANCEMENT MODE. With 0.6 ohm RDS(on), it is designed for high-power RECTANGULAR packages in various electronic systems.
IPN70R1K0CEATMA1
Infineon's IPN70R1K0CEATMA1 is a N-CHANNEL FET with 700V DS Breakdown Voltage, 12.7A IDM, and 1 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a PLASTIC/EPOXY package with GULL WING terminals.
R-PDSO-G3
12.7 A
IPP60R125P6XKSA1
IPP60R125P6XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 87A and 0.125 ohm RDS(on). The transistor operates in enhancement mode and features a built-in diode, making it suitable for high-power systems.
IPW60R125P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 600 V;
IPW60R170CFD7XKSA1
IPW60R170CFD7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 51A and 0.17 ohm RDS(on). Suitable for enhancement mode operation, it features a built-in diode and operates at -55°C min temp.
60 mJ
14 A
.17 ohm
51 A
IPW80R280P7XKSA1
Infineon's IPW80R280P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring 45A IDM and 0.28 ohm RDS(on), it operates in enhancement mode with 43mJ EAS rating. The PLASTIC/EPOXY package style with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
43 mJ
45 A
BSL303SPEH6327XTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 6.3 A; JESD-609 Code: e3; Additional Features: AVALANCHE RATED;
AVALANCHE RATED
30 mJ
30 V
.033 ohm
R-PDSO-G6
25.2 A
AEC-Q101
BSZ0909NDXTMA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 4 mJ; JESD-30 Code: S-PDSO-N8; Minimum Operating Temperature: -55 Cel;
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
4.1 A
.025 ohm
S-PDSO-N8
SQUARE
40 A
NO LEAD
IPAW60R360P7SXKSA1
Infineon's IPAW60R360P7SXKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 26A IDM and 0.36 ohm RDS(on). This MOSFET has a package style of flange mount and can withstand temperatures as low as -40°C.
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