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IPN70R1K0CEATMA1

Infineon Technologies

IPN70R1K0CEATMA1 by Infineon Technologies

Infineon's IPN70R1K0CEATMA1 is a N-CHANNEL FET with 700V DS Breakdown Voltage, 12.7A IDM, and 1 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a PLASTIC/EPOXY package with GULL WING terminals.

Median Price

$0.384

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

$0.370

1k+ parts

$0.307

10k+ parts

$0.274

18,000

-

$0.370

$0.307

$0.274

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.384

10k+ parts

$0.342

9,000

-

-

$0.384

$0.342

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.537

6,000

-

-

-

$0.537

Distributors (In-Stock)

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Digiode

USA . 204 parts In-Stock

1+ parts

$0.289

100+ parts

-

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204

$0.289

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.453

100+ parts

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200

$0.453

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Vyrian

USA . 5,005 parts In-Stock

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5,005

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,958 parts In-Stock

1+ parts

$0.258

100+ parts

-

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11,958

$0.258

-

-

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Corphita

USA . 188 parts In-Stock

1+ parts

$0.274

100+ parts

-

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188

$0.274

-

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Modulus Dynamics

Lithuania . 16,554 parts In-Stock

1+ parts

$0.438

100+ parts

$0.420

1k+ parts

$0.403

10k+ parts

-

16,554

$0.438

$0.420

$0.403

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Corohmni

South Africa . 150 parts In-Stock

1+ parts

$0.438

100+ parts

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150

$0.438

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

$0.426

10k+ parts

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2,000

$0.444

-

$0.426

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Continental Prestige Electronics

USA . 1,050 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

-

10k+ parts

$0.444

1,050

$0.453

-

-

$0.444

Argo Parts USA

USA . 387 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

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10k+ parts

$0.439

387

$0.453

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-

$0.439

Semicontronic

India . 11,712 parts In-Stock

1+ parts

$0.560

100+ parts

$0.546

1k+ parts

$0.543

10k+ parts

-

11,712

$0.560

$0.546

$0.543

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.355

100+ parts

$1.233

1k+ parts

$1.111

10k+ parts

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450

$1.355

$1.233

$1.111

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Aztec Data Supply Inc.

USA . 34,031 parts In-Stock

1+ parts

$1.570

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34,031

$1.570

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AZTECH Wire

Italy . 82 parts In-Stock

1+ parts

$10.280

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82

$10.280

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QUARKTWIN TECHNOLOGY LTD

USA . 22,008 parts In-Stock

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Perfect Parts

USA . 10,102 parts In-Stock

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10,102

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RC Electronics

USA . 1,039 parts In-Stock

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1,039

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Microchip USA

USA . 306 parts In-Stock

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306

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Overview

Unlock the power of your electronic devices with the IPN70R1K0CEATMA1 by Infineon Technologies. This high-quality Power FET offers unparalleled performance and reliability, making it the perfect choice for a wide range of switching applications. With its N-CHANNEL configuration and built-in diode, this transistor provides seamless operation and efficient power management. Say goodbye to limitations and hello to endless possibilities with the IPN70R1K0CEATMA1 - the ultimate solution for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it ideal for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher mobility and faster switching speeds compared to P-channel transistors, making this product suitable for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design by providing a path for reverse current, enhancing the efficiency of the overall system.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast turn-on and turn-off times, making it suitable for power control and conversion circuits.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 700 V

With a high breakdown voltage, this transistor can handle high voltage applications with ease, providing reliable performance in demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and allows for easy placement on circuit boards, optimizing the use of board real estate.

Terminal Form: GULL WING

The Gull Wing terminal form provides excellent solder joint reliability and mechanical strength, ensuring secure connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the on/off state, providing precise power management and improved efficiency in the circuit.

Maximum Pulsed Drain Current (IDM): 12.7 A

With a high pulsed drain current rating, this transistor can handle short-duration high-current spikes, making it suitable for power applications that require transient currents.

Avalanche Energy Rating (EAS): 50 mJ

The high avalanche energy rating indicates the robustness of the transistor against voltage spikes and transient events, ensuring reliable operation in harsh environments.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuit designs, providing flexibility and enabling various configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact designs and applications where board real estate is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low power consumption, and fast switching speeds, making this transistor suitable for power management applications.

Transistor Element Material: SILICON

Silicon-based transistors are widely used in power applications due to their high efficiency, reliability, and ease of integration into semiconductor processes.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this transistor can withstand extreme cold conditions, making it suitable for a wide range of operating environments.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term performance in diverse environmental conditions.

Maximum Drain-Source On Resistance: 1 ohm

Having a low drain-source on resistance minimizes power dissipation and improves efficiency in power switching applications, reducing heat generation and enhancing overall performance.

Terminal Position: DUAL

The dual terminal position allows for flexible configuration options and ease of connection, enabling versatile circuit designs and applications.

Case Connection: DRAIN

The drain case connection simplifies circuit layout and improves thermal dissipation, enhancing the reliability and performance of the transistor in power applications.

Technical Specifications

Power Field Effect Transistors (FET) IPN70R1K0CEATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

50 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

700 V

Maximum Drain-Source On Resistance:

1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

12.7 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPN70R1K0CEATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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