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IPA70R750P7SXKSA1

Infineon Technologies

IPA70R750P7SXKSA1 by Infineon Technologies

Infineon's IPA70R750P7SXKSA1 is a N-CHANNEL FET with 700V DS breakdown voltage and 0.75 ohm RDS(on). Ideal for SWITCHING applications, it has 15.4A IDM, operates in ENHANCEMENT MODE, and features a built-in DIODE. Suitable for various industries due to its robust design and high performance.

Median Price

$0.842

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 687 parts In-Stock

1+ parts

$0.940

100+ parts

$0.780

1k+ parts

$0.502

10k+ parts

$0.462

687

$0.940

$0.780

$0.502

$0.462

Farnell

UK . 301 parts In-Stock

1+ parts

$1.050

100+ parts

$0.437

1k+ parts

-

10k+ parts

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301

$1.050

$0.437

-

-

Element14

Singapore . 302 parts In-Stock

1+ parts

$1.340

100+ parts

$1.120

1k+ parts

$0.665

10k+ parts

$0.633

302

$1.340

$1.120

$0.665

$0.633

Rochester

USA . 147,719 parts In-Stock

1+ parts

-

100+ parts

$0.484

1k+ parts

$0.402

10k+ parts

$0.358

147,719

-

$0.484

$0.402

$0.358

Verical

USA . 64,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.502

10k+ parts

$0.448

64,500

-

-

$0.502

$0.448

RS (Exports)

UK . 330 parts In-Stock

1+ parts

-

100+ parts

$0.744

1k+ parts

$0.635

10k+ parts

-

330

-

$0.744

$0.635

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 979 parts In-Stock

1+ parts

$0.377

100+ parts

-

1k+ parts

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979

$0.377

-

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Vyrian

USA . 4,562 parts In-Stock

1+ parts

-

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4,562

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 17,028 parts In-Stock

1+ parts

$0.337

100+ parts

-

1k+ parts

-

10k+ parts

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17,028

$0.337

-

-

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Semicontronic

India . 16,637 parts In-Stock

1+ parts

$0.337

100+ parts

$0.329

1k+ parts

$0.327

10k+ parts

-

16,637

$0.337

$0.329

$0.327

-

Corphita

USA . 868 parts In-Stock

1+ parts

$0.357

100+ parts

-

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868

$0.357

-

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Aztec Data Supply Inc.

USA . 47,982 parts In-Stock

1+ parts

$0.446

100+ parts

-

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10k+ parts

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47,982

$0.446

-

-

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Continental Prestige Electronics

USA . 432 parts In-Stock

1+ parts

$0.777

100+ parts

$0.540

1k+ parts

$0.321

10k+ parts

-

432

$0.777

$0.540

$0.321

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Corohmni

South Africa . 171 parts In-Stock

1+ parts

$1.058

100+ parts

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171

$1.058

-

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Modulus Dynamics

Lithuania . 6,296 parts In-Stock

1+ parts

$1.712

100+ parts

$1.644

1k+ parts

$1.575

10k+ parts

-

6,296

$1.712

$1.644

$1.575

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Futuretech Components

Singapore . 14,133 parts In-Stock

1+ parts

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14,133

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QUARKTWIN TECHNOLOGY LTD

USA . 12,594 parts In-Stock

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12,594

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Microchip USA

USA . 6,074 parts In-Stock

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6,074

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Argo Parts USA

USA . 3,167 parts In-Stock

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3,167

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Bastille Electronics

Australia . 550 parts In-Stock

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550

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Perfect Parts

USA . 28 parts In-Stock

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28

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Overview

Unleash the power of innovation with the IPA70R750P7SXKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon's Power Field Effect Transistors (FET) are known for their superior quality and reliability. This N-CHANNEL transistor with a built-in diode is perfect for switching applications, offering a minimum DS breakdown voltage of 700V and a maximum pulsed drain current of 15.4A. Whether you're looking to optimize performance or enhance efficiency, this product delivers unmatched value and benefits that will take your projects to the next level. Experience the difference with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the FET.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL configuration allows for efficient current flow and switching capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse currents.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 700 V

High breakdown voltage ensures safe operation in high voltage applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode ensures low power consumption and fast switching speed.

Maximum Pulsed Drain Current (IDM): 15.4 A

High pulsed drain current capability allows for handling peak current demands efficiently.

No. of Terminals: 3

3 terminals provide necessary connections for input and output in various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mounting style offers easy installation and secure placement in the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability in power switching applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance and durability for the transistor element.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme temperatures, ensuring reliability in harsh environments.

Terminal Finish: TIN

Tin finish on terminals offers good conductivity and corrosion resistance.

Maximum Drain-Source On Resistance: 0.75 ohm

Low drain-source on resistance minimizes power loss and heat generation during operation.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment in the circuit.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures safety in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) IPA70R750P7SXKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

700 V

Maximum Drain-Source On Resistance:

.75 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

15.4 A

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPA70R750P7SXKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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