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IPZA60R180P7XKSA1

Infineon Technologies

IPZA60R180P7XKSA1 by Infineon Technologies

Infineon's IPZA60R180P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 53A IDM and 0.18 ohm RDS(on). This rectangular package transistor has a flange mount style and withstands temperatures as low as -55°C.

Median Price

$2.250

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9 parts In-Stock

1+ parts

$0.983

100+ parts

$0.983

1k+ parts

$0.983

10k+ parts

$0.983

9

$0.983

$0.983

$0.983

$0.983

Farnell

UK . 240 parts In-Stock

1+ parts

$3.170

100+ parts

$1.920

1k+ parts

$1.460

10k+ parts

-

240

$3.170

$1.920

$1.460

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Newark

USA . 240 parts In-Stock

1+ parts

$3.730

100+ parts

$2.750

1k+ parts

$2.340

10k+ parts

-

240

$3.730

$2.750

$2.340

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Mouser Electronics

USA . 196 parts In-Stock

1+ parts

$4.210

100+ parts

$3.030

1k+ parts

$2.400

10k+ parts

$2.160

196

$4.210

$3.030

$2.400

$2.160

Rochester

USA . 3,350 parts In-Stock

1+ parts

-

100+ parts

$1.710

1k+ parts

$1.530

10k+ parts

$1.440

3,350

-

$1.710

$1.530

$1.440

Verical

USA . 3,120 parts In-Stock

1+ parts

-

100+ parts

-

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$1.913

10k+ parts

$1.800

3,120

-

-

$1.913

$1.800

DigiKey

USA . 470 parts In-Stock

1+ parts

-

100+ parts

-

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$2.250

10k+ parts

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470

-

-

$2.250

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 758 parts In-Stock

1+ parts

$0.934

100+ parts

-

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-

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758

$0.934

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-

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Vyrian

USA . 10,927 parts In-Stock

1+ parts

-

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10,927

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Sensible Micro Corp

USA . 2,160 parts In-Stock

1+ parts

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2,160

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

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870

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 16,928 parts In-Stock

1+ parts

$0.825

100+ parts

$0.792

1k+ parts

$0.759

10k+ parts

-

16,928

$0.825

$0.792

$0.759

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Corphita

USA . 443 parts In-Stock

1+ parts

$0.885

100+ parts

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443

$0.885

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Component Stockers USA

USA . 561 parts In-Stock

1+ parts

$1.000

100+ parts

$2.080

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561

$1.000

$2.080

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Ampacity Inc.

Singapore . 231 parts In-Stock

1+ parts

$1.820

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231

$1.820

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Microchip USA

USA . 2,336 parts In-Stock

1+ parts

$16.185

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2,336

$16.185

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Perfect Parts

USA . 874 parts In-Stock

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874

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iodParts Technologies Inc.

India . 240 parts In-Stock

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240

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GreenTree Electronics

Israel . 60 parts In-Stock

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60

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the IPZA60R180P7XKSA1 by Infineon Technologies. This high-quality Power Field Effect Transistor is designed for switching applications, offering a breakthrough in efficiency and performance. With a built-in diode and a maximum DS Breakdown Voltage of 600V, this N-CHANNEL transistor provides unmatched reliability and versatility. Whether you're looking to optimize your energy consumption or enhance your electronic designs, this product delivers the value and benefits you need to stay ahead. Upgrade to Infineon Technologies and experience the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have higher mobility and conductivity, making them suitable for applications requiring high performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and protects against reverse current flow, making it convenient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient switching capabilities.

Minimum DS Breakdown Voltage: 600 V

With a minimum breakdown voltage of 600V, this transistor is suitable for high voltage applications, providing reliable performance under high stress conditions.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation, making it convenient for integration into various electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and ease of soldering, facilitating the assembly process.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer improved efficiency and faster response times, making them ideal for high-performance applications.

Maximum Pulsed Drain Current (IDM): 53 A

With a maximum pulsed drain current of 53A, this transistor can handle high current loads, making it suitable for power applications.

Avalanche Energy Rating (EAS): 56 mJ

The high avalanche energy rating of 56mJ indicates the transistor's ability to withstand energy spikes and surges, ensuring reliability in harsh operating conditions.

No. of Terminals: 4

The four terminals provide flexibility in circuit design and allow for various connection options, enhancing the versatility of the transistor.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers stability and heat dissipation capabilities, making it suitable for applications requiring efficient cooling.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and low power consumption, making it an excellent choice for energy-efficient applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making them a preferred choice for a wide range of electronic applications.

Minimum Operating Temperature: -55 °C

The minimum operating temperature of -55°C ensures reliable performance in extreme temperature conditions, making this transistor suitable for industrial and automotive applications.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures stable electrical connections, enhancing the overall reliability of the transistor.

Maximum Drain-Source On Resistance: 0.18 ohm

With a low drain-source on resistance of 0.18 ohm, this transistor minimizes power loss and heat dissipation, improving overall efficiency.

Terminal Position: SINGLE

The single terminal position simplifies the installation and connection process, making it easy to integrate this transistor into various circuit designs.

Technical Specifications

Power Field Effect Transistors (FET) IPZA60R180P7XKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

56 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

53 A

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPZA60R180P7XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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