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IPW80R280P7XKSA1

Infineon Technologies

IPW80R280P7XKSA1 by Infineon Technologies

Infineon's IPW80R280P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring 45A IDM and 0.28 ohm RDS(on), it operates in enhancement mode with 43mJ EAS rating. The PLASTIC/EPOXY package style with THROUGH-HOLE terminals makes it suitable for various power electronics designs.

Median Price

$2.995

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,340 parts In-Stock

1+ parts

$2.675

100+ parts

$2.399

1k+ parts

$1.674

10k+ parts

$1.583

2,340

$2.675

$2.399

$1.674

$1.583

Newark

USA . 414 parts In-Stock

1+ parts

$2.970

100+ parts

$1.840

1k+ parts

$1.490

10k+ parts

-

414

$2.970

$1.840

$1.490

-

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$3.020

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$3.020

-

-

-

Farnell

UK . 414 parts In-Stock

1+ parts

$3.370

100+ parts

$1.620

1k+ parts

$1.410

10k+ parts

-

414

$3.370

$1.620

$1.410

-

Mouser Electronics

USA . 229 parts In-Stock

1+ parts

$3.800

100+ parts

$1.710

1k+ parts

$1.510

10k+ parts

-

229

$3.800

$1.710

$1.510

-

DigiKey

USA . 257 parts In-Stock

1+ parts

$3.910

100+ parts

$2.153

1k+ parts

$1.479

10k+ parts

$1.370

257

$3.910

$2.153

$1.479

$1.370

Element14

Singapore . 29 parts In-Stock

1+ parts

$5.000

100+ parts

$2.650

1k+ parts

$2.580

10k+ parts

-

29

$5.000

$2.650

$2.580

-

Verical

USA . 4,980 parts In-Stock

1+ parts

-

100+ parts

$1.704

1k+ parts

$1.400

10k+ parts

-

4,980

-

$1.704

$1.400

-

RS (Exports)

UK . 240 parts In-Stock

1+ parts

-

100+ parts

$2.887

1k+ parts

$2.683

10k+ parts

-

240

-

$2.887

$2.683

-

Rochester

USA . 31 parts In-Stock

1+ parts

-

100+ parts

$1.380

1k+ parts

$1.230

10k+ parts

$1.160

31

-

$1.380

$1.230

$1.160

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 484 parts In-Stock

1+ parts

$1.568

100+ parts

-

1k+ parts

-

10k+ parts

-

484

$1.568

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$2.490

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$2.490

-

-

-

TME

Poland . 97 parts In-Stock

1+ parts

$3.560

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$3.560

-

-

-

Vyrian

USA . 2,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,591

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 573 parts In-Stock

1+ parts

$1.485

100+ parts

-

1k+ parts

-

10k+ parts

-

573

$1.485

-

-

-

Modulus Dynamics

Lithuania . 6,565 parts In-Stock

1+ parts

$1.793

100+ parts

$1.721

1k+ parts

$1.650

10k+ parts

-

6,565

$1.793

$1.721

$1.650

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$2.440

100+ parts

-

1k+ parts

$2.343

10k+ parts

-

2,000

$2.440

-

$2.343

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Argo Parts USA

USA . 2,926 parts In-Stock

1+ parts

$2.490

100+ parts

-

1k+ parts

-

10k+ parts

-

2,926

$2.490

-

-

-

Ampacity Inc.

Singapore . 51 parts In-Stock

1+ parts

$3.050

100+ parts

-

1k+ parts

-

10k+ parts

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51

$3.050

-

-

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Continental Prestige Electronics

USA . 741 parts In-Stock

1+ parts

$4.130

100+ parts

$2.320

1k+ parts

$1.820

10k+ parts

-

741

$4.130

$2.320

$1.820

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Microchip USA

USA . 8,038 parts In-Stock

1+ parts

$28.600

100+ parts

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10k+ parts

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8,038

$28.600

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QUARKTWIN TECHNOLOGY LTD

USA . 7,784 parts In-Stock

1+ parts

-

100+ parts

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7,784

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-

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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500

-

-

-

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Perfect Parts

USA . 370 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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370

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Overview

Unlock the power of your applications with the IPW80R280P7XKSA1 by Infineon Technologies. As a leader in Power Field Effect Transistors, Infineon ensures top-notch quality and reliability in every product. This N-CHANNEL transistor with a built-in diode is perfect for switching applications, offering a minimum DS breakdown voltage of 800V and a maximum pulsed drain current of 45A. With its enhanced efficiency and performance, this transistor provides unmatched value and benefits to customers looking to optimize their systems. Trust Infineon for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the components inside, making this product a reliable choice.

Polarity or Channel Type: N-CHANNEL

N-Channel type allows for efficient switching operations, making this product suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances overall efficiency, making this product a convenient choice.

Transistor Application: SWITCHING

Designed for switching applications, this product offers precise control and fast response times.

Minimum DS Breakdown Voltage: 800 V

With a high breakdown voltage, this product can handle high voltage levels, making it a safe and reliable choice for demanding environments.

Package Shape: RECTANGULAR

The rectangular shape allows for easy installation and compact design, making this product suitable for space constrained applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ease of soldering, ensuring a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation offers enhanced performance and efficiency, making this product a desirable choice for demanding applications.

Maximum Pulsed Drain Current (IDM): 45 A

With a high pulsed drain current rating, this product can handle high peak currents, making it suitable for applications with transient loads.

Avalanche Energy Rating (EAS): 43 mJ

The high avalanche energy rating ensures protection against voltage spikes, making this product a robust choice for rugged environments.

No. of Terminals: 3

With three terminals, this product offers versatility in circuit connections and configurations, making it suitable for a wide range of applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy and secure mounting, enhancing the reliability and longevity of this product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high efficiency and reliability, making this product a top choice for power management applications.

Transistor Element Material: SILICON

Silicon material provides high performance and durability, ensuring long-term reliability and stability of this product.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this product can withstand harsh environments and extreme conditions.

Terminal Finish: TIN

The terminal finish with tin coating enhances conductivity and corrosion resistance, ensuring long-lasting performance.

Maximum Drain-Source On Resistance: 0.28 ohm

With a low drain-source on resistance, this product minimizes power loss and heat generation, making it energy-efficient and cost-effective.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces complexity in circuit design, making this product user-friendly and convenient.

Case Connection: DRAIN

The drain case connection enhances heat dissipation and thermal management, ensuring optimal performance and reliability of this product.

Technical Specifications

Power Field Effect Transistors (FET) IPW80R280P7XKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

43 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

800 V

Maximum Drain-Source On Resistance:

.28 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

45 A

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPW80R280P7XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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