Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
2SK3305-S-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
SINGLE
5 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
75 W
FET General Purpose Power
NO
BLF6G27-75,112
NXP Semiconductors
NXP Semiconductors BLF6G27-75,112 is a single N-channel FET with 18A max drain current and 75W power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temperature of 200°C.
18 A
200 Cel
BLF6G27LS-75,112
NXP Semiconductors BLF6G27LS-75,112 is a 75W N-CHANNEL FET with 18A max drain current. Ideal for power applications, it operates in enhancement mode at up to 200°C.
NTE2380
Nte Electronics
NTE2380 by Nte Electronics is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 75W Pd. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
DRAIN
SINGLE WITH BUILT-IN DIODE
500 V
2 A
2.5 A
3 ohm
TO-220AB
R-PSFM-T3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
10 A
Not Qualified
THROUGH-HOLE
SWITCHING
SILICON
90 ns
100 ns
2SK1636STR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 15 A;
15 A
YES
MTB3N60ET4
Onsemi
MTB3N60ET4 by Onsemi is a N-CHANNEL FET with 3A max drain current and 75W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
3 A
e0
235
TIN LEAD
BUZ11_R4941
Fairchild Semiconductor
Fairchild Semiconductor's BUZ11_R4941 is a N-CHANNEL FET with 30A ID and 75W power dissipation. Ideal for applications requiring high drain current, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150°C temperature.
30 A
Tin/Lead (Sn85Pb15)
FDD26AN06A0_F085
Fairchild Semiconductor FDD26AN06A0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 36A Drain Current, 0.026 ohm On Resistance, and 75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 175 °C.
35 mJ
60 V
36 A
7 A
.026 ohm
TO-252AA
R-PSSO-G2
e3
2
175 Cel
-55 Cel
SMALL OUTLINE
260
AEC-Q101
MATTE TIN
GULL WING
30
NTD30N02T4
NTD30N02T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V Min DS Breakdown Voltage, 100A Max Pulsed Drain Current, and 0.0145 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
50 mJ
24 V
.0145 ohm
100 A
NTD80N02T4
NTD80N02T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 80A, Min DS Breakdown Voltage of 24V, and Max Pulsed Drain Current of 200A. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 75W, making it ideal for high-power switching applications.
733 mJ
80 A
.0058 ohm
200 A
NTD80N02
NTD80N02 by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a max drain current of 80A, min DS breakdown voltage of 24V, and max pulsed drain current of 200A. With a package style of small outline and operating temperature up to 150 °C, it offers efficient performance in various electronic devices.
NTD25P03L1
NTD25P03L1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM, 200mJ EAS, and 0.08 ohm RDS(ON). With a max power dissipation of 75W and operating temperature up to 150 °C, it's suitable for various ENHANCEMENT MODE switching tasks.
LOGIC LEVEL COMPATIBLE
200 mJ
30 V
25 A
.08 ohm
R-PSIP-T3
IN-LINE
P-CHANNEL
75 A
Other Transistors
NTD25P03LT4
NTD25P03LT4 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C.
NTD80N02T4G
NTD80N02T4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 200A Max Pulsed Drain Current, and 0.0058 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 75W.
TIN
FDD24AN06LA0_F085
Fairchild Semiconductor's FDD24AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.019 ohm.
32 mJ
40 A
7.1 A
.019 ohm
MTP2P50EG
MTP2P50EG by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 6A and EAS of 80mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and SILICON element material, it offers reliable performance up to 150°C.
HIGH VOLTAGE
80 mJ
6 ohm
6 A
NTD80N02G
NTD80N02G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 80A, Min DS Breakdown Voltage of 24V, and Max Pulsed Drain Current of 200A. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 75W.
NTD4302G
NTD4302G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power switching circuits.
722 mJ
8.4 A
.01 ohm
28 A
FDD26AN06A0
FDD26AN06A0 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 7A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.058 ohm.
.058 ohm
MTP12P10G
MTP12P10G by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, 12A Max ID, and 0.3 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 28A IDM. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
LEADFORM OPTIONS ARE AVAILABLE
100 V
12 A
.3 ohm
Tin (Sn)
40
NTD25P03L1G
NTD25P03L1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high power dissipation of 75W.
MTB2P50ET4G
MTB2P50ET4G by Onsemi is a P-CHANNEL FET with 500V DS Breakdown Voltage, 6A IDM, and 80mJ EAS. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
AVALANCHE RATED
NTD30N02G
NTD30N02G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 30A Drain Current, and 0.0145 ohm On Resistance. With a max power dissipation of 75W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
NTD5407NT4G
NTD5407NT4G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage and 38A Drain Current. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include a built-in diode, small outline package style, and a low on-resistance of 0.026 ohm.
150 mJ
40 V
38 A
80 pF
NTD25P03LRLG
NTD25P03LRLG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has a max power dissipation of 75W.
BUZ32H
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB;
120 mJ
200 V
9.5 A
.4 ohm
DMTH6005LFG-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Minimum Operating Temperature: -55 Cel; Transistor Application: SWITCHING;
171 mJ
.0041 ohm
69 pF
S-PDSO-N8
8
SQUARE
400 A
MIL-STD-202
NO LEAD
DUAL
NVTYS002N03CLTWG
NVTYS002N03CLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 30V DS Breakdown Voltage, and 675A IDM. Ideal for applications requiring high power dissipation up to 75W in enhancement mode operation. Features include a built-in diode, avalanche energy rating of 320mJ, and AEC-Q101 compliance for automotive use.
320 mJ
29 A
.0031 ohm
43 pF
R-PDSO-X8
3.2 W
675 A
UNSPECIFIED
STL20NF06LAG
STMicroelectronics
STL20NF06LAG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at temperatures from -55 °C to 175 °C. Ideal for power management in compact designs.
210 mJ
20 A
.05 ohm
R-PDSO-F5
5
FLAT
FDMS86380_F085
Fairchild Semiconductor's FDMS86380_F085 is a N-CHANNEL Power FET for SWITCHING applications. With 80V DS Breakdown Voltage, it offers 50A Drain Current and 75W Power Dissipation. Ideal for ENHANCEMENT MODE operations in various electronic devices.
AVALANCHE ENERGY RATED
16 mJ
80 V
50 A
13.4 ohm
14 pF
R-PDSO-N5
30 ns
31 ns
NVD5407NT4G
NVD5407NT4G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 75A IDM, and 0.026 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages. Suitable for enhancement mode operation in various electronic devices.
FDWS9520L-F085
FDWS9520L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 281A IDM. Ideal for AMPLIFIER applications, it features a 90mJ EAS rating, 0.0125 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with a small outline package style, it has a max temp of 175°C and -55°C min operating temp.
90 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60.8 A
.0125 ohm
MO-240AA
R-PDSO-F6
6
281 A
AMPLIFIER
DMTH6005LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 69 pF;
FDWS9510L-F085
Onsemi's FDWS9510L-F085 is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 50A Drain Current, 0.0135 ohm On Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
.0135 ohm
222 ns
20 ns
FDD9510L-F085
Onsemi's FDD9510L-F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 50A Drain Current, and 0.022 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 75W and fast turn on/off times of 44ns/220ns.
35.3 mJ
.022 ohm
220 ns
44 ns
NVTFS8D1N08HTAG
NVTFS8D1N08HTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 216A IDM, and 0.0083 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
113 mJ
61 A
.0083 ohm
46 pF
S-PDSO-F8
216 A
© 2023 All rights reserved
