Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
SI7228DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7228DN-T1-GE3 is an N-channel FET with 2 elements and built-in diode for switching applications. Features include max pulsed drain current of 35A, avalanche energy rating of 9.8mJ, and max power dissipation of 23W. Ideal for high-power switching circuits requiring a small outline package design.
9.8 mJ
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
26 A
8.8 A
.02 ohm
METAL-OXIDE SEMICONDUCTOR
S-XDSO-C6
1
2
6
ENHANCEMENT MODE
150 Cel
UNSPECIFIED
SQUARE
SMALL OUTLINE
260
N-CHANNEL
23 W
35 A
Not Qualified
FET General Purpose Powers
YES
Pure Matte Tin (Sn) - annealed
C BEND
DUAL
30
SWITCHING
SILICON
DMC3035LSD-13
Diodes Incorporated
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (Abs) (ID): 6.9 A;
HIGH RELIABILITY
6.9 A
.035 ohm
R-PDSO-G8
e3
8
PLASTIC/EPOXY
RECTANGULAR
N-CHANNEL AND P-CHANNEL
2 W
30 A
Other Transistors
MATTE TIN
GULL WING
IPG15N06S3L-45
Infineon Technologies
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE
47 mJ
55 V
15 A
17 A
.045 ohm
R-PDSO-F8
175 Cel
21 W
60 A
FET General Purpose Power
FLAT
IPG20N06S3L-23
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
110 mJ
20 A
33 A
.023 ohm
45 W
80 A
IPG20N06S3L-35
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 2; Qualification: Not Qualified;
55 mJ
SI9936DY,518
NXP Semiconductors
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 40 A; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;
5 A
.05 ohm
MS-012AA
e4
40 A
NICKEL PALLADIUM GOLD
FDS8949_F085
Fairchild Semiconductor
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
26 mJ
40 V
6 A
.029 ohm
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
32 mJ
7 A
1.6 W
DMC3036LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR;
.036 ohm
2.5 W
24 A
NTMD6N02R2
Onsemi
NTMD6N02R2 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A IDM, 0.035 ohm RDS(on), and 360mJ EAS for high-performance requirements. With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150 °C making it suitable for various industrial uses.
360 mJ
20 V
3.92 A
e0
235
.73 W
Tin/Lead (Sn/Pb)
BSO4804
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
90 mJ
8 A
3
32 A
STS4DPF20L
STMicroelectronics
STS4DPF20L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
LOW THRESHOLD
4 A
.1 ohm
P-CHANNEL
16 A
STS7C4F30L
STS7C4F30L by STMicroelectronics is a Power FET with N-Channel and P-Channel types. It features 2 separate elements with built-in diode for switching applications. With a max drain current of 7A, it operates in enhancement mode at up to 150°C, making it suitable for various power management tasks.
.026 ohm
28 A
NTMD2P01R2
NTMD2P01R2 by Onsemi is a P-CHANNEL FET with 16V DS Breakdown Voltage, 9A IDM, and 0.1 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE with 2 elements and built-in diode. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
350 mJ
16 V
2.3 A
.71 W
9 A
NOT SPECIFIED
STS4DPF30L
STS4DPF30L by STMicroelectronics is a P-channel FET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact SO package ensures easy surface mounting in various electronic devices.
225
Matte Tin (Sn) - annealed
STS4DNF30L
STS4DNF30L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
.06 ohm
NTHC5513T1
NTHC5513T1 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. Features include 20V DS Breakdown Voltage, 10A IDM, and 0.08 ohm RDS(on). With 2 elements in a RECTANGULAR package, it operates at up to 150 °C for various electronic designs.
2.1 A
3.1 A
.08 ohm
R-XDSO-C8
1.1 W
10 A
TIN LEAD
NTMC1300R2
The Onsemi NTMC1300R2 is a Power FET with N-CHANNEL and P-CHANNEL polarity, ideal for SWITCHING applications. It features 30V DS Breakdown Voltage, 8.5A Max IDM, and 0.09ohm RDS(ON). With a compact 8-terminal GULL WING package, it operates in ENHANCEMENT MODE up to 150 °C.
75 mJ
1.8 A
2.2 A
.09 ohm
8.5 A
NTMD2C02R2
NTMD2C02R2 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 20V DS Breakdown Voltage, 48A IDM, and 0.043 ohm RDS(ON). Ideal for SWITCHING applications, this transistor has a max operating temperature of 150 °C and comes in an 8-terminal GULL WING package.
5.2 A
.043 ohm
48 A
NTHD2102PT1
NTHD2102PT1 by Onsemi is a P-CHANNEL FET with 2 elements, built-in diode, and 0.058 ohm RDS(on). Ideal for switching applications with 3.4A max drain current and 8V min DS breakdown voltage. Features small outline package style and operates in enhancement mode.
8 V
3.4 A
.058 ohm
2.1 W
4.6 A
DMN2040LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTHD4502NT1G
NTHD4502NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 30V DS breakdown voltage, and 12A max pulsed drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package style. Operating from -55 to 150 °C, this MOSFET has 0.085 ohm max on-resistance and 22ns turn-on time.
2.9 A
.085 ohm
25 pF
-55 Cel
1.13 W
12 A
30 ns
22 ns
NTHD3100CT1
NTHD3100CT1 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, max drain current of 3.2A, and 0.08 ohm on-resistance. Operating at up to 150 °C, this MOSFET is suitable for various power management tasks in electronics.
3.2 A
NTHD2102PT1G
NTHD2102PT1G by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.4A ID, and 0.058 ohm RDS(on). Ideal for SWITCHING applications, it features 2 elements with built-in diode in a small outline package for enhanced performance.
TIN
IRF7350PBF
International Rectifier
IRF7350PBF by International Rectifier is a Power FET with N-Channel and P-Channel types. It features 100V DS Breakdown Voltage, 8.4A IDM, and 0.21 ohm RDS(on). Ideal for switching applications due to its separate configuration with built-in diode elements.
35 mJ
100 V
1.5 A
.21 ohm
1.3 W
8.4 A
SI7960DP-T1-E3
Vishay Intertechnology's SI7960DP-T1-E3 is an N-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.021 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and DC-DC converters.
27 mJ
60 V
6.2 A
.021 ohm
R-XDSO-C6
3.5 W
Matte Tin (Sn)
40
SI4542DY-T1-E3
Vishay Intertechnology's SI4542DY-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL configurations, featuring 30V DS Breakdown Voltage. Ideal for applications requiring high power dissipation up to 2W, it operates in enhancement mode with max drain current of 6.9A. Suitable for surface mount designs due to its small outline package style.
6.1 A
.025 ohm
SI7540DP-T1-E3
Vishay Intertechnology's SI7540DP-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 7.6A and 0.017 ohm on-resistance, it operates in enhancement mode up to 150°C, making it suitable for various power management tasks.
12 V
5.7 A
7.6 A
.017 ohm
MMDF1N05ER2G
MMDF1N05ER2G by Onsemi is a N-CHANNEL Power FET with 50V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
300 mJ
50 V
2 A
.3 ohm
Tin (Sn)
MMDF2C03HDR2G
MMDF2C03HDR2G by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configuration, ideal for switching applications. It features 30V DS breakdown voltage, 21A max pulsed drain current, and 0.07 ohm max drain-source resistance. With a small outline package style and operating temperature up to 150 °C, it's suitable for various power management tasks.
324 mJ
4.1 A
.07 ohm
21 A
MMDF2N02ER2G
MMDF2N02ER2G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 18A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C.
245 mJ
25 V
3.6 A
18 A
MMDF3N02HDR2G
MMDF3N02HDR2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 19A IDM, and 0.09 ohm RDS. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE at up to 150 °C.
405 mJ
3.8 A
19 A
NTMD2C02R2G
NTMD2C02R2G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 5.2A, 0.043 ohm RDS(on), and 48A pulsed drain current. Ideal for switching applications in small outline packages, operating at up to 150 °C peak reflow temp.
NTMD2P01R2G
NTMD2P01R2G by Onsemi is a P-CHANNEL FET with 16V DS breakdown voltage, 9A IDM, and 0.1 ohm RDS(on). It's used for switching applications in small outline packages with 8 terminals.
SQJ962EP-T1-GE3
Vishay Intertechnology's SQJ962EP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 32A IDM, and 0.06 ohm RDS(on). Ideal for power management applications requiring high drain current handling in compact designs. Operates in enhancement mode with built-in diode elements, suitable for surface mount assembly with Gull Wing terminals.
5 mJ
R-PSSO-G4
4
25 W
SINGLE
STS3DPF60L
STS3DPF60L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a 60V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
3 A
.16 ohm
STS4C3F60L
STS4C3F60L by STMicroelectronics is a versatile N/P-channel FET designed for efficient switching applications. It features a 60V breakdown voltage, max drain current of 4A, and operates at up to 150 °C. Ideal for compact power management in electronics.
.065 ohm
SP8K2TB
ROHM
ROHM SP8K2TB is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 0.047ohm RDS(on), and 150°C max operating temp. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
.047 ohm
e2
TIN COPPER
NTHD3100CT3G
NTHD3100CT3G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 3.2A, on-resistance of 0.08 ohm, and max power dissipation of 1.1W. Operating at up to 150 °C, it's a surface-mount transistor in small outline package suitable for various electronic designs.
NTHD3100CT3
NTHD3100CT3 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, 20V DS Breakdown Voltage, and 0.08 ohm Drain-Source Resistance. This small outline transistor has a max power dissipation of 1.1W and operates at up to 150 °C temperature.
DMG4932LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.19 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
9.5 A
.015 ohm
1.19 W
NTGD4161PT1G
NTGD4161PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, GULL WING terminals, and 0.16 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.1W and can handle up to 10A pulsed drain current.
R-PDSO-G6
FDS4559-F085
FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
4.5 A
.055 ohm
FDS8958A-F085
FDS8958A-F085 by Onsemi is a Power FET with N-Channel and P-Channel types. It features 30V DS Breakdown Voltage, 20A IDM, and 0.028 ohm RDS(on). Ideal for switching applications, this MOSFET has a max operating temperature of 150°C and comes in an 8-terminal Gull Wing package.
54 mJ
.028 ohm
DMP2110UVTQ-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.01 W; Maximum Feedback Capacitance (Crss): 47 pF; Transistor Application: SWITCHING;
.15 ohm
47 pF
1.01 W
AEC-Q101; IATF 16949; MIL-STD-202
BSO203PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
97 mJ
8.2 A
32.8 A
BSO204PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8; Terminal Form: GULL WING;
63 mJ
.03 ohm
BSO207PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 44 mJ; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
44 mJ
22.8 A
© 2023 All rights reserved
