Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO4614BL
Alpha & Omega Semiconductor
AO4614BL by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements w/ diode. It has 40V DS breakdown voltage, 40A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
6 A
.03 ohm
METAL-OXIDE SEMICONDUCTOR
43 pF
R-PDSO-G8
2
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL AND P-CHANNEL
2 W
40 A
YES
GULL WING
DUAL
SWITCHING
SILICON
NTMD5838NLR2G
Onsemi
NTMD5838NLR2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 35A IDM, and 0.0308 ohm RDS(on). It is used in applications requiring high power dissipation up to 3W, such as power management systems and motor control circuits.
20 mJ
8.9 A
7.4 A
.0308 ohm
e3
1
260
N-CHANNEL
3 W
35 A
Not Qualified
FET General Purpose Power
MATTE TIN
30
NVMFD5877NLT1G
NVMFD5877NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS. It's used for SWITCHING applications due to its 2 ELEMENTS WITH BUILT-IN DIODE configuration. Operating at 175°C max temp, it's ideal for high-power requirements in various electronic devices.
10.5 mJ
DRAIN
60 V
17 A
.06 ohm
R-PDSO-F6
6
175 Cel
23 W
74 A
FLAT
NVMFD5877NLT3G
NVMFD5877NLT3G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 74A Max Pulsed Drain Current, 10.5mJ Avalanche Energy Rating, and 0.06ohm Max Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power switching circuits.
STL65DN3LLH5
STMicroelectronics
STL65DN3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 76A IDM, and 0.0079 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with 60W power dissipation.
270 mJ
30 V
65 A
19 A
.0079 ohm
R-PDSO-N6
60 W
76 A
Matte Tin (Sn)
NO LEAD
TT8J11TCR
ROHM
ROHM's TT8J11TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 3.5A Drain Current, 0.043 ohm On Resistance. With small outline package and max temp of 150°C, it suits various electronic designs.
12 V
3.5 A
.043 ohm
R-PDSO-F8
P-CHANNEL
1.25 W
12 A
Other Transistors
10
TT8J13TCR
ROHM TT8J13TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5A IDM, and 0.062 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and small outline package style.
2.5 A
.062 ohm
5 A
IRF7350TRPBF
International Rectifier
IRF7350TRPBF by International Rectifier is a power FET with N-Channel and P-Channel polarity. It has a min DS breakdown voltage of 100V and can handle a max pulsed drain current of 8.4A. This transistor is commonly used for switching applications.
HIGH RELIABILITY
35 mJ
100 V
2.1 A
.21 ohm
MS-012AA
8.4 A
QJD1210011
Powerex
Powerex QJD1210011 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A IDM, 0.025 ohm RDS(on), and SILICON CARBIDE technology. Package style is FLANGE MOUNT with 20 terminals in PLASTIC/EPOXY material.
ISOLATED
1200 V
100 A
.025 ohm
R-PUFM-X20
20
FLANGE MOUNT
NOT SPECIFIED
250 A
NO
UNSPECIFIED
UPPER
SILICON CARBIDE
NVMFD5852NLT1G
NVMFD5852NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 329A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 175 °C max operating temp and AEC-Q101 reference standard compliance.
80 mJ
44 A
15 A
.012 ohm
27 W
329 A
AEC-Q101
NVMFD5853NLT1G
NVMFD5853NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 165A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
40 mJ
34 A
.015 ohm
24 W
165 A
NVMD6N03R2G
NVMD6N03R2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.032 ohm RDS(ON). It's used for SWITCHING applications in automotive (AEC-Q101) due to its 30A IDM and 325mJ EAS ratings.
ULTRA LOW ON RESISTANCE
325 mJ
.032 ohm
30 A
Tin (Sn)
NVMFD5873NLT1G
NVMFD5873NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 190A pulsed drain current, and 0.013 ohm max on-resistance. It is used in automotive applications due to its AEC-Q101 reference standard compliance and 175°C max operating temperature.
58 A
10 A
.013 ohm
107 W
190 A
STL20DN10F7
STL20DN10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features 20A max drain current, 0.067 ohm RDS(on), and operates in the -55 to 150 °C temperature range. Suitable for high-power switching circuits requiring efficient performance.
20 A
12.3 A
.067 ohm
62.5 W
FET General Purpose Powers
NVMFD5852NLWFT1G
NVMFD5852NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, 329A IDM, and 0.012 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.
NVMFD5853NLWFT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;
NVMFD5873NLWFT1G
NVMFD5873NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 190A IDM, and 0.013 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
TIN
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFD5877NLWFT3G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;
DMC4028SSDQ-13
Diodes Incorporated
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Shape: RECTANGULAR; No. of Elements: 2;
7.2 A
5.4 A
.028 ohm
2.16 W
27.3 A
BSO615NGHUMA1
Infineon Technologies
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 mJ
2.6 A
.15 ohm
3
10.4 A
BSO615CGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
AVALANCHE RATED
47 mJ
3.1 A
.11 ohm
12.4 A
BSO207PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Maximum Drain-Source On Resistance: .045 ohm; Terminal Position: DUAL;
44 mJ
20 V
.045 ohm
22.8 A
BSO330N02KGFUMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 26 A; Terminal Form: GULL WING;
19 mJ
4.2 A
26 A
BSC072N03LDGATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
90 mJ
11.5 A
.0094 ohm
80 A
BSC750N10NDGATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 17 mJ; No. of Terminals: 8; No. of Elements: 2;
17 mJ
3.2 A
.075 ohm
52 A
BSO303PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 7 A; JESD-609 Code: e3;
LOGIC LEVEL COMPATIBLE
97 mJ
7 A
.021 ohm
32.8 A
BSO211PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.2 A; No. of Elements: 2; Maximum Drain-Source On Resistance: .067 ohm;
28 mJ
18.4 A
HTMN5130SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Reference Standard: AEC-Q101;
89 mJ
55 V
.13 ohm
8 A
IPG20N04S412ATMA1
Infineon's IPG20N04S412ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0122 ohm RDS(on). Ideal for power applications requiring high current handling in a compact SMALL OUTLINE package.
.0122 ohm
IPG20N06S415ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 90 mJ;
.0155 ohm
IPG20N06S4L14ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; Minimum DS Breakdown Voltage: 60 V; Moisture Sensitivity Level (MSL): 1;
.0137 ohm
BSO612CVGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
3 A
.12 ohm
e4
NICKEL PALLADIUM GOLD SILVER
DMP2066LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
5.8 A
.04 ohm
ZXMN2AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
3.7 A
2.9 A
R-PDSO-N8
2.45 W
13 A
NICKEL PALLADIUM GOLD
ZXMN3AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Additional Features: HIGH RELIABILITY; Maximum Operating Temperature: 150 Cel;
STS3DNE60L
STS3DNE60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 12A IDM and 0.1 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power circuits.
LOW THRESHOLD
.1 ohm
BSO215C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G8;
LOGIC LEVEL
26 mJ
e0
14.8 A
TIN LEAD
BSO612CV
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 3 A; JESD-30 Code: R-PDSO-G8;
235
STS5DNF20V
STS5DNF20V by STMicroelectronics is an N-CHANNEL FET with 20V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a dual-element configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE.
Nickel/Palladium/Gold (Ni/Pd/Au)
DMC3018LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .02 ohm;
9.1 A
.02 ohm
2.5 W
32 A
NTLJD3119CTAG
NTLJD3119CTAG by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It features 20V DS Breakdown Voltage, 18A Max IDM, and 0.065 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
3.8 A
.065 ohm
S-PDSO-N6
SQUARE
2.3 W
18 A
STC5DNF30V
STC5DNF30V by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.5 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
4.5 A
1.3 W
STS9D8NH3LL
STS9D8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9A, a breakdown voltage of 30V, and operates at up to 150 °C. Ideal for compact power management in electronics.
150 mJ
9 A
40
STS4DNF60
STS4DNF60 by STMicroelectronics is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, capable of handling 16A Pulsed Drain Current and 4A Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W at 150°C.
4 A
.09 ohm
16 A
STS2DPF80
STS2DPF80 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features an 80V breakdown voltage, max drain current of 2A, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
80 V
2 A
.25 ohm
IRF7341QTRPBF
IRF7341QTRPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS with BUILT-IN DIODE, capable of handling up to 42A IDM and has a low 0.05 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
140 mJ
5.1 A
.05 ohm
2.4 W
42 A
NTMD6N04R2G
NTMD6N04R2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 29A IDM. Ideal for SWITCHING applications, it features a 245mJ EAS rating and 0.034 ohm Drain-Source Resistance. With GULL WING terminals in an 8-terminal package, it operates in ENHANCEMENT MODE up to 150 °C.
245 mJ
4.6 A
.034 ohm
29 A
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