Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSO211PNTMA1
Infineon Technologies
Infineon's BSO211PNTMA1 is a P-CHANNEL FET with 2 elements, built-in diode, and 20V DS breakdown voltage. Ideal for switching applications, it offers 18.8A max pulsed drain current and 0.067 ohm max on-resistance. This MOSFET in gull wing package is designed for enhancement mode operation in small outline form factor.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
28 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
4.7 A
.067 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
2
8
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
18.8 A
YES
GULL WING
DUAL
SWITCHING
SILICON
BSO303PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE;
97 mJ
30 V
8.2 A
.021 ohm
NOT SPECIFIED
32.4 A
DMN3016LDN-13
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Form: NO LEAD; Maximum Pulsed Drain Current (IDM): 45 A;
24 mJ
DRAIN
7.3 A
.02 ohm
82 pF
S-PDSO-N8
1
150 Cel
-55 Cel
SQUARE
260
N-CHANNEL
1.6 W
45 A
NO LEAD
NVMFD5875NLT1G
Onsemi
NVMFD5875NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 80A IDM, and 0.045 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance, it features a small outline package and operates b/w -55 °C to 175°C.
40 mJ
60 V
22 A
7 A
.045 ohm
R-PDSO-F8
e3
175 Cel
32 W
80 A
AEC-Q101
MATTE TIN
FLAT
30
15.7 ns
11.3 ns
NVMFD5875NLT3G
NVMFD5875NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.045 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFD5875NLWFT1G
NVMFD5875NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.045 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
STL20DNF06LAG
STMicroelectronics
STL20DNF06LAG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and low on-resistance of 0.05 Ω. Ideal for automotive and power management systems, it ensures reliable performance in compact designs.
210 mJ
20 A
.05 ohm
R-PDSO-F6
6
DMNH6042SPD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
HIGH RELIABILITY
65 mJ
5.7 A
32 A
DMNH6021SPD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE;
64 mJ
.025 ohm
DMNH6042SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
5.3 A
24 pF
2.1 W
35 A
DMN3032LFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; No. of Terminals: 6; Minimum DS Breakdown Voltage: 30 V;
10 mJ
6.2 A
.03 ohm
44 pF
S-PDSO-N6
e4
1.7 W
25 A
NICKEL PALLADIUM GOLD
HP8M51TB1
ROHM
ROHM's HP8M51TB1 is a Power FET with N/P-Channel, 2 elements w/ diode. It has 100V DS breakdown voltage, 18A max pulsed drain current, and 0.18 ohm RDS(on). Ideal for switching applications in enhancement mode, this MOSFET comes in a small outline package for surface mount assembly.
2.9 mJ
100 V
.18 ohm
N-CHANNEL AND P-CHANNEL
18 A
TIN
IPG20N06S2L65AUMA1
Infineon's IPG20N06S2L65AUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, 80A IDM, and 0.065 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
55 V
.065 ohm
NVMFD5C478NLWFT1G
NVMFD5C478NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage and 98A Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance, it features a compact rectangular package and low on-resistance of 0.025 ohm.
48 mJ
40 V
29 A
10.5 A
9 pF
23 W
98 A
Matte Tin (Sn) - annealed
DMC2025UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: NICKEL PALLADIUM GOLD;
8.5 mJ
6 A
.035 ohm
77 pF
R-PDSO-N6
1.4 W
MIL-STD-202
NO
DMN4025LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.14 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
5.6 A
120 pF
2.14 W
DMT2005UDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
AVALANCHE ENERGY RATED
24 V
50 A
.007 ohm
517 pF
S-PDSO-F6
1.9 W
70 A
DMT2005UDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Terminals: 6;
FDWS9520L-F085
FDWS9520L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 281A IDM. Ideal for AMPLIFIER applications, it features a 90mJ EAS rating, 0.0125 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with a small outline package style, it has a max temp of 175°C and -55°C min operating temp.
90 mJ
60.8 A
.0125 ohm
MO-240AA
75 W
281 A
AMPLIFIER
STL38DN6F7AG
STL38DN6F7AG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 10 A, a breakdown voltage of 60 V, and operates at temperatures up to 175 °C. Ideal for power management in compact electronic devices.
BULK: 3000
50 mJ
10 A
.027 ohm
7.9 pF
57.7 W
40 A
DMNH6065SPDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; JESD-30 Code: R-PDSO-F8; Transistor Element Material: SILICON;
89 mJ
27 A
9.9 pF
2.4 W
68 W
108 A
DMT47M2LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14.8 W; Maximum Drain-Source On Resistance: .0108 ohm; Transistor Element Material: SILICON;
24.4 mJ
30.2 A
.0108 ohm
14.8 pF
S-PDSO-F8
14.8 W
120 A
DMC3061SVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Terminal Form: GULL WING; No. of Terminals: 6;
3.4 A
.06 ohm
29 pF
R-PDSO-G6
1.08 W
DMC3061SVT-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; JESD-30 Code: R-PDSO-G6; Terminal Position: DUAL;
NTMFD5875NLT1G
NTMFD5875NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include 2 elements with built-in diode, small outline package style, and -55 to 175 °C operating temperature range.
36 pF
NTMFD6H840NLT1G
NTMFD6H840NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 80V DS breakdown voltage, and 336A max pulsed drain current. It is used in applications requiring high power dissipation, such as power supplies and motor control systems.
297 mJ
80 V
74 A
14 A
.0088 ohm
11 pF
90 W
336 A
DMT3006LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Drain Current (ID): 25 A; Moisture Sensitivity Level (MSL): 1;
58 mJ
.01 ohm
72 pF
1.8 W
90 A
DMT3006LDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Avalanche Energy Rating (EAS): 58 mJ;
DMT6015LPDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7.9 W; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
21.4 mJ
17.1 A
.018 ohm
30 pF
7.9 W
68 A
Matte Tin (Sn)
DMC3061SVTQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 2; Maximum Drain Current (ID): 3.4 A;
AEC-Q101; IATF 16949; MIL-STD-202
DMT4015LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Package Shape: SQUARE;
7.8 A
2 W
DMT4015LDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 2; Maximum Pulsed Drain Current (IDM): 50 A;
DMTH6015LDVW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Case Connection: DRAIN; Terminal Finish: MATTE TIN;
20.8 mJ
9.2 A
.0205 ohm
20.5 pF
3 W
DMTH6015LDVW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-30 Code: S-PDSO-F8; Minimum DS Breakdown Voltage: 60 V;
DMTH6015LDVWQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
AEC-Q101; MIL-STD-202
DMTH4014LDVW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;
19.6 mJ
10.2 A
.015 ohm
21 pF
2.6 W
110 A
DMTH4014LDVW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;
DMN10H220LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 42 A;
1.1 mJ
.222 ohm
12 pF
40 W
42 A
DMN3055LFDBQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Maximum Drain Current (ID): 5 A; Package Body Material: PLASTIC/EPOXY;
6 mJ
5 A
.04 ohm
1.36 W
AEC-Q101; IATF 16949
DMC2025UFDBQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Avalanche Energy Rating (EAS): 8.5 mJ; Case Connection: DRAIN;
DMC10H220LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 9 A;
.5 mJ
1.7 A
.22 ohm
1.5 W
9 A
DMC10H172SSD-13
DMC10H172SSD-13 by Diodes Inc. is a Power FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 100V DS breakdown voltage, 16A pulsed drain current, and 0.16 ohm max on-resistance. Suitable for small outline packages in MOSFET technology with -55 to 150°C operating range.
20 mJ
2 A
.16 ohm
20 pF
16 A
DMTH6010LPDWQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Application: SWITCHING; No. of Elements: 2;
47.6 A
.016 ohm
58 pF
37.5 W
DMTH6010LPDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 60 V;
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