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SINGLE WITH BUILT-IN DIODE AND RESISTOR Insulated Gate Bipolar Transistors (IGBT) 36

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB10NB37LZ by STMicroelectronics

STGB10NB37LZ

STMicroelectronics

STGB10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. It's designed for automotive ignition applications due to its built-in diode and resistor, small outline package style, and matte tin terminal finish.

VOLTAGE CLAMPING

COLLECTOR

20 A

375 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.4 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGB20NB32LZ by STMicroelectronics

STGB20NB32LZ

STMicroelectronics

STGB20NB32LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 325 V, power dissipation of 150 W, and operates at up to 175 °C. Its compact surface mount design ensures efficient performance in demanding environments.

COLLECTOR

40 A

325 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15900 ns

2900 ns

STGB20NB37LZ by STMicroelectronics

STGB20NB37LZ

STMicroelectronics

STGB20NB37LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector current of 40 A, power dissipation of 150 W, and operates up to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

ESD PROTECTED

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

MGB15N40CLT4 by Onsemi

MGB15N40CLT4

Onsemi

MGB15N40CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 22V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package with GULL WING terminals. The transistor has a nominal turn-off time of 20500ns and can handle a max collector current of 15A.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.1 V

22 V

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

136 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

NGB8206N by Onsemi

NGB8206N

Onsemi

NGB8206N by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 390V, max gate-emitter voltage of 15V, and max collector current of 20A. With a package style of SMALL OUTLINE and peak reflow temperature of 235 °C, it offers reliable performance in high-power automotive systems.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

NGB8206NTF4 by Onsemi

NGB8206NTF4

Onsemi

NGB8206NTF4 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and a Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. The transistor has a Nominal Turn Off Time of 18500ns and Nominal Turn On Time of 6500ns, suitable for fast switching requirements in automotive systems.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

R-PSSO-G2

e0

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

Tin/Lead (Sn80Pb20)

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

STGB18N40LZ-1 by STMicroelectronics

STGB18N40LZ-1

STMicroelectronics

STGB18N40LZ-1 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

30 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-262AA

R-PSIP-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGD18N40LZ-1 by STMicroelectronics

STGD18N40LZ-1

STMicroelectronics

STGD18N40LZ-1 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 125 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

25 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-251

R-PSIP-T3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGD19N40LZ by STMicroelectronics

STGD19N40LZ

STMicroelectronics

STGD19N40LZ by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.85V, IC of 25A, and Ptot of 125W. It is used for power control applications in a small outline package with a max operating temperature of 175°C.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

STGP18N40LZ by STMicroelectronics

STGP18N40LZ

STMicroelectronics

STGP18N40LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

30 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

NGB15N41CLT4 by Onsemi

NGB15N41CLT4

Onsemi

NGB15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

NGD15N41CLT4 by Onsemi

NGD15N41CLT4

Onsemi

NGD15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

NGP15N41CL by Onsemi

NGP15N41CL

Onsemi

NGP15N41CL by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Power Dissipation of 107W. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. With a rise time of 7000ns and fall time of 15000ns, this transistor offers reliable performance in automotive systems.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

TO-220AB

R-PSFM-T3

e0

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

STGB7NB40LZT4 by STMicroelectronics

STGB7NB40LZT4

STMicroelectronics

STGB7NB40LZT4 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 370 V, power dissipation of 100 W, and operates at up to 175 °C. This surface-mount device ensures efficient performance with built-in diode and resistor.

VOLTAGE CLAMPING

COLLECTOR

14 A

370 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

8000 ns

5400 ns

NGB18N40CLBT4 by Onsemi

NGB18N40CLBT4

Onsemi

NGB18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

NGD18N40CLBT4 by Onsemi

NGD18N40CLBT4

Onsemi

NGD18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 15A, and power dissipation of 115W. The transistor operates at a max temperature of 175 °C with rise time of 7000ns and fall time of 15000ns.

COLLECTOR

15 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

STGB20NB37LZT4 by STMicroelectronics

STGB20NB37LZT4

STMicroelectronics

STGB20NB37LZT4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max power dissipation of 200W, a collector current of 40A, and operates at up to 175 °C. Its compact surface mount design ensures efficient thermal management.

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

STGB10NB40LZT4 by STMicroelectronics

STGB10NB40LZT4

STMicroelectronics

STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.

COLLECTOR

20 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

12000 ns

1570 ns

NGD8201NT4 by Onsemi

NGD8201NT4

Onsemi

NGD8201NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 115W. This surface-mount transistor operates at up to 175 °C with rise time of 14000ns and fall time of 7000ns.

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

7000 ns

2.3 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

115 W

Not Qualified

14000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

STGD5NB120SZ-1 by STMicroelectronics

STGD5NB120SZ-1

STMicroelectronics

STGD5NB120SZ-1 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 10 A collector current, and operates at up to 150 °C. Its built-in diode enhances performance in various electronic systems.

COLLECTOR

10 A

1200 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5 V

20 V

TO-251AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

14100 ns

850 ns

NGB8202NT4 by Onsemi

NGB8202NT4

Onsemi

NGB8202NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 150W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 8000ns and fall time of 14000ns.

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

NGD8205NT4 by Onsemi

NGD8205NT4

Onsemi

NGD8205NT4 by Onsemi is an N-CHANNEL IGBT with 20A IC, 390V VCE, and 88W Pd. Ideal for automotive ignition applications due to its built-in diode and resistor. Features GULL WING terminals, RECTANGULAR package shape, and operates up to 175 °C.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

88 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

MGP15N40CLG by Onsemi

MGP15N40CLG

Onsemi

MGP15N40CLG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max collector current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a package style of FLANGE MOUNT and max power dissipation of 150W, this transistor operates at temperatures up to 175 °C.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20000 ns

2.1 V

22 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

150 W

Not Qualified

6000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

NGB18N40CLBT4G by Onsemi

NGB18N40CLBT4G

Onsemi

NGB18N40CLBT4G by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 430V and a max gate-emitter voltage of 18V. It has a built-in diode and resistor, making it suitable for automotive ignition applications. This IGBT has a max power dissipation of 115W and operates at temperatures up to 175 °C.

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

NGB8202NT4G by Onsemi

NGB8202NT4G

Onsemi

NGB8202NT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for POWER CONTROL applications. With a small outline package style and surface mount capability, it offers efficient performance up to 175°C operating temperature.

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

18500 ns

6500 ns

NGD8201NT4G by Onsemi

NGD8201NT4G

Onsemi

NGD8201NT4G by Onsemi is an N-CHANNEL IGBT with 20A IC, 400V VCE, and 125W power dissipation. Ideal for power control applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology.

COLLECTOR

20 A

400 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

18500 ns

6500 ns

NGP15N41CLG by Onsemi

NGP15N41CLG

Onsemi

NGP15N41CLG by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 440V, collector current of 15A, and power dissipation of 107W. With rise time of 7000ns and fall time of 15000ns, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

NGB8204NT4G by Onsemi

NGB8204NT4G

Onsemi

NGB8204NT4G by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

STGB35N35LZ-1 by STMicroelectronics

STGB35N35LZ-1

STMicroelectronics

STGB35N35LZ-1 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, a power dissipation of 176W, and operates at up to 175 °C. Its built-in diode enhances efficiency in various electronic circuits.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-262AA

R-PSIP-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

37000 ns

7600 ns

STGB35N35LZT4 by STMicroelectronics

STGB35N35LZT4

STMicroelectronics

STGB35N35LZT4 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Its compact design ensures efficient performance in surface mount configurations.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-263AA

R-PDSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

30

POWER CONTROL

SILICON

37000 ns

7600 ns

STGP35N35LZ by STMicroelectronics

STGP35N35LZ

STMicroelectronics

STGP35N35LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Ideal for high-performance switching in industrial systems.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

37000 ns

7600 ns

STGB19N40LZ by STMicroelectronics

STGB19N40LZ

STMicroelectronics

STGB19N40LZ by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 1.85V, supports up to 150W power dissipation, and operates b/w -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management.

BULK: 1000

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

ISL9V2040D3STV by Onsemi

ISL9V2040D3STV

Onsemi

ISL9V2040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a collector-emitter voltage of 390V. Ideal for automotive ignition applications, it has a built-in diode and resistor, GULL WING terminals, and can operate b/w -40 to 175 °C.

COLLECTOR

10 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

130 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

6000 ns

2780 ns

1.9 V

LGD15N41ATI by Littelfuse

LGD15N41ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

15 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

107 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

15500 ns

17000 ns

9500 ns

LGB15N41ATI by Littelfuse

LGB15N41ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

15 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

107 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

15500 ns

17000 ns

9500 ns

LGB18N40ATH by Littelfuse

LGB18N40ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; No. of Elements: 1;

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns