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Integrated Device Technology SRAM 112

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
7130LA100JI8 by Integrated Device Technology

7130LA100JI8

Integrated Device Technology

7130LA100JI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it features an access time of 100ns and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

100 ns

COMMON

S-PQCC-J52

e0

8192 bit

MULTI-PORT SRAM

8

3

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

7130LA55PFI8 by Integrated Device Technology

7130LA55PFI8

Integrated Device Technology

7130LA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at an industrial temperature grade, it has a max access time of 55ns and operates in parallel mode. Suitable for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G64

e0

8192 bit

MULTI-PORT SRAM

8

3

2

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

71321LA55JI8 by Integrated Device Technology

71321LA55JI8

Integrated Device Technology

71321LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 52 terminals in a chip carrier package, and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

16384 bit

MULTI-PORT SRAM

8

3

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA35JI8 by Integrated Device Technology

71342SA35JI8

Integrated Device Technology

71342SA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.015 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA55PFI8 by Integrated Device Technology

71342SA55PFI8

Integrated Device Technology

Integrated Device Technology's 71342SA55PFI8 is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. Featuring an access time of 55ns and a memory density of 32768 bits, it is ideal for industrial applications requiring fast and reliable parallel memory storage. The device comes in a square flatpack package with surface mount capability, making it suitable for various electronic systems.

55 ns

COMMON

S-PQFP-G64

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

.015 Amp

4.5 V

SRAMs

270 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

7134LA35JI8 by Integrated Device Technology

7134LA35JI8

Integrated Device Technology

7134LA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71421SA25PFI8 by Integrated Device Technology

71421SA25PFI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: QFP; Package Shape: SQUARE; Technology: CMOS;

25 ns

COMMON

S-PQFP-G64

e0

16384 bit

MULTI-PORT SRAM

8

3

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.03 Amp

4.5 V

SRAMs

270 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

7007L20PFGI8 by Integrated Device Technology

7007L20PFGI8

Integrated Device Technology

7007L20PFGI8 by Integrated Device Technology is a 32Kx8 MULTI-PORT SRAM with 3-STATE output, operating at 5V. It features a max access time of 20ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

20 ns

COMMON

S-PQFP-G80

e3

262144 bit

MULTI-PORT SRAM

8

3

1

2

80

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP80,.64SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

.01 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.635 mm

QUAD

30

7024L55PFI by Integrated Device Technology

7024L55PFI

Integrated Device Technology

7024L55PFI by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 4096 words and 16 memory width. Operating at -40 to 85 °C, it has an access time of 55 ns and consumes a max current of 0.004 Amp. Ideal for industrial applications requiring fast data access in a compact FLATPACK package.

55 ns

COMMON

S-PQFP-G100

e0

65536 bit

MULTI-PORT SRAM

16

3

2

100

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX16

3-STATE

PLASTIC/EPOXY

QFP

QFP100,.63SQ,20

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

70V25S25PFI8 by Integrated Device Technology

70V25S25PFI8

Integrated Device Technology

70V25S25PFI8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with 3.3V supply, operating at -40 to 85°C. Featuring a fast access time of 25ns and low standby current of 0.015A, it's ideal for industrial applications requiring high-speed memory solutions.

25 ns

COMMON

S-PQFP-G100

e0

131072 bit

MULTI-PORT SRAM

16

3

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

QFP

QFP100,.63SQ,20

SQUARE

FLATPACK

PARALLEL

240

3.3

Not Qualified

.015 Amp

3 V

SRAMs

190 mA

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.5 mm

QUAD

20

71V35761SA200BGGI by Integrated Device Technology

71V35761SA200BGGI

Integrated Device Technology

71V35761SA200BGGI by Integrated Device Technology is a 128KX36 CACHE SRAM with 3.3V supply voltage, operating synchronously at -40 to 85°C. Featuring a fast access time of 3.1 ns, it's ideal for industrial applications requiring high-speed parallel memory operations.

3.1 ns

PIPELINED

R-PBGA-B119

e1

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

71V35761SA200BGI8 by Integrated Device Technology

71V35761SA200BGI8

Integrated Device Technology

CACHE SRAM; Peak Reflow Temperature (C): 225; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Maximum Time At Peak Reflow Temperature (s): 20;

e0

CACHE SRAM

3

225

TIN LEAD

20

71V3559S75BQI8 by Integrated Device Technology

71V3559S75BQI8

Integrated Device Technology

71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

7.5 ns

R-PBGA-B165

e0

15 mm

4718592 bit

CACHE SRAM

18

3

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

225

1.2 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

13 mm

71024S25TYG8 by Integrated Device Technology

71024S25TYG8

Integrated Device Technology

STANDARD SRAM; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

e3

STANDARD SRAM

3

260

MATTE TIN

40

71024S25TYGI8 by Integrated Device Technology

71024S25TYGI8

Integrated Device Technology

STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

e3

STANDARD SRAM

3

260

MATTE TIN

40

71024S25TYGI by Integrated Device Technology

71024S25TYGI

Integrated Device Technology

STANDARD SRAM; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

e3

STANDARD SRAM

3

260

MATTE TIN

40

IDT71024S15TYI by Integrated Device Technology

IDT71024S15TYI

Integrated Device Technology

IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.759 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.62 mm

71V35761S183BGGI8 by Integrated Device Technology

71V35761S183BGGI8

Integrated Device Technology

71V35761S183BGGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3.3 ns access time. Ideal for industrial applications requiring high-speed data processing in compact systems.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

71V35761S183BGGI by Integrated Device Technology

71V35761S183BGGI

Integrated Device Technology

Integrated Device Technology's 71V35761S183BGGI is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85 °C. Suitable for applications requiring fast access times and high memory density.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

IDT71256SA20Y by Integrated Device Technology

IDT71256SA20Y

Integrated Device Technology

IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

20 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.5184 mm

IDT71256SA25YI by Integrated Device Technology

IDT71256SA25YI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;

25 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

7008L20JI8 by Integrated Device Technology

7008L20JI8

Integrated Device Technology

7008L20JI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQCC-J84

e0

29.3116 mm

524288 bit

MULTI-PORT SRAM

8

1

1

2

84

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.3116 mm

7008L20PFI8 by Integrated Device Technology

7008L20PFI8

Integrated Device Technology

7008L20PFI8 by Integrated Device Technology is a 64Kx8 SRAM with 3-STATE output, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast access times of up to 20ns. This multi-port SRAM has a memory density of 524288 bits and can operate in parallel mode.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI8 by Integrated Device Technology

7008S55PFI8

Integrated Device Technology

7008S55PFI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage with common I/O type and 3-STATE output characteristics.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7024L55PF8 by Integrated Device Technology

7024L55PF8

Integrated Device Technology

7024L55PF8 by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package with fine pitch and gull wing terminals, suitable for commercial temperature grade applications. With 4096 words and 16-bit memory width, it offers fast parallel data processing in various electronic systems.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S20PF8 by Integrated Device Technology

7025S20PF8

Integrated Device Technology

7025S20PF8 by Integrated Device Technology is an 8Kx16 SRAM with a memory density of 131072 bit. It operates at a nominal voltage of 5V and has an access time of 20ns. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

20 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S25PF8 by Integrated Device Technology

7025S25PF8

Integrated Device Technology

7025S25PF8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with a memory density of 131072 bit. It operates at a max access time of 25ns and has a supply voltage range from 4.5V to 5.5V, making it suitable for high-speed applications requiring fast data access and storage capabilities in commercial-grade environments.

25 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

265 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

709289L9PFI by Integrated Device Technology

709289L9PFI

Integrated Device Technology

709289L9PFI by Integrated Device Technology is a synchronous SRAM with an organization of 64KX16. It operates at a max clock frequency of 66 MHz and has a memory density of 1,048,576 bits. This multi-port SRAM is commonly used in industrial applications requiring high-speed data storage and retrieval.

20 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

66 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

16

3

1

2

100

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.006 Amp

4.5 V

SRAMs

430 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V261L25PFI8 by Integrated Device Technology

70V261L25PFI8

Integrated Device Technology

70V261L25PFI8 by Integrated Device Technology is a 16KX16 MULTI-PORT SRAM with a supply voltage of 3.3V. It operates asynchronously and has a max access time of 25ns. This SRAM is commonly used in industrial applications due to its low profile, fine pitch package style and wide temperature range (up to 85°C).

25 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

262144 bit

MULTI-PORT SRAM

16

3

1

2

100

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V26L25JI8 by Integrated Device Technology

70V26L25JI8

Integrated Device Technology

70V26L25JI8 by Integrated Device Technology is a 16Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 25ns access time, 185mA max supply current, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact chip carrier package.

25 ns

COMMON

S-PQCC-J84

e0

29.2862 mm

262144 bit

MULTI-PORT SRAM

16

1

1

2

84

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

3.3

Not Qualified

4.572 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.2862 mm

70V27L20PFI8 by Integrated Device Technology

70V27L20PFI8

Integrated Device Technology

70V27L20PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package suitable for industrial applications, offering fast access time of 20 ns and common I/O type.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

230 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V27L35PFI8 by Integrated Device Technology

70V27L35PFI8

Integrated Device Technology

70V27L35PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a fast access time of 35ns and is ideal for industrial applications requiring high-speed memory solutions.

35 ns

INTERRUPT FLAGS

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

235 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V37L20PFI8 by Integrated Device Technology

70V37L20PFI8

Integrated Device Technology

70V37L20PFI8 by Integrated Device Technology is a 32KX18 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package and offers fast access time of 20 ns. Ideal for industrial applications requiring high-speed memory operations.

20 ns

INTERRUPT FLAG

COMMON

S-PQFP-G100

e0

14 mm

589824 bit

MULTI-PORT SRAM

18

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V38L20PFI8 by Integrated Device Technology

70V38L20PFI8

Integrated Device Technology

70V38L20PFI8 by Integrated Device Technology is a 64Kx18 MULTI-PORT SRAM with 3.3V supply, operating in ASYNCHRONOUS mode. Featuring a low profile FLATPACK package, 0.5mm terminal pitch, and industrial temperature grade, it's ideal for high-speed parallel memory applications.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

1179648 bit

MULTI-PORT SRAM

18

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V631S12PRFI8 by Integrated Device Technology

70V631S12PRFI8

Integrated Device Technology

70V631S12PRFI8 by Integrated Device Technology is a 256Kx18 MULTI-PORT SRAM with 3.3V nominal voltage, operating in synchronous mode. It features a low profile flatpack package and offers fast access time of 12 ns, making it ideal for industrial applications requiring high-speed memory solutions.

12 ns

COMMON

R-PQFP-G128

e0

20 mm

4718592 bit

MULTI-PORT SRAM

18

3

1

2

128

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP128,.63X.87,20

RECTANGULAR

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

225

2.5/3.3,3.3

Not Qualified

1.6 mm

.015 Amp

3.15 V

SRAMs

515 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

30

14 mm

7130SA100PF8 by Integrated Device Technology

7130SA100PF8

Integrated Device Technology

7130SA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PF8 by Integrated Device Technology

7130SA55PF8

Integrated Device Technology

7130SA55PF8 by Integrated Device Technology is a multi-port SRAM with a memory density of 8192 bit. It operates asynchronously and has a max access time of 55 ns. This SRAM is commonly used in applications requiring fast and efficient data storage and retrieval.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PFI8 by Integrated Device Technology

7130SA55PFI8

Integrated Device Technology

7130SA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile FLATPACK package suitable for industrial applications. With an asynchronous operating mode and common I/O type, this SRAM is ideal for high-speed parallel data processing tasks.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71321SA55JI8 by Integrated Device Technology

71321SA55JI8

Integrated Device Technology

71321SA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures. Ideal for applications requiring fast data retrieval in harsh environments.

55 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7133LA25PFI8 by Integrated Device Technology

7133LA25PFI8

Integrated Device Technology

7133LA25PFI8 by Integrated Device Technology is a 2Kx16 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable memory storage. The device supports asynchronous operation and offers 3-STATE output characteristics.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

32768 bit

MULTI-PORT SRAM

16

3

1

2

100

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

71342LA20J8 by Integrated Device Technology

71342LA20J8

Integrated Device Technology

71342LA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF8 by Integrated Device Technology

71342LA20PF8

Integrated Device Technology

71342LA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns and features a low profile flatpack package suitable for commercial temperature grade applications.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25J8 by Integrated Device Technology

71342LA25J8

Integrated Device Technology

71342LA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a CMOS technology, 52 terminals in a square chip carrier package, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25JI8 by Integrated Device Technology

71342LA25JI8

Integrated Device Technology

71342LA25JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures up to 85°C. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PF8 by Integrated Device Technology

71342LA25PF8

Integrated Device Technology

71342LA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 25ns in commercial temperature grade. Ideal for applications requiring fast and reliable data storage with parallel interface.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25PFI8 by Integrated Device Technology

71342LA25PFI8

Integrated Device Technology

71342LA25PFI8 by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bits. It operates at an industrial temperature grade range from -40 to 85°C, featuring a max access time of 25ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J8 by Integrated Device Technology

71342LA35J8

Integrated Device Technology

71342LA35J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF8 by Integrated Device Technology

71342LA35PF8

Integrated Device Technology

Integrated Device Technology's 71342LA35PF8 is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm