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Integrated Device Technology SRAM 112

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
71342LA45J8 by Integrated Device Technology

71342LA45J8

Integrated Device Technology

71342LA45J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J8 by Integrated Device Technology

71342LA55J8

Integrated Device Technology

71342LA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and offers parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF8 by Integrated Device Technology

71342LA55PF8

Integrated Device Technology

71342LA55PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package and operates in asynchronous mode with common I/O type. Ideal for applications requiring fast memory access such as networking equipment and industrial automation systems.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J8 by Integrated Device Technology

71342LA70J8

Integrated Device Technology

71342LA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a package style of CHIP CARRIER. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J8 by Integrated Device Technology

71342SA20J8

Integrated Device Technology

71342SA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and a max access time of 20ns. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF8 by Integrated Device Technology

71342SA20PF8

Integrated Device Technology

71342SA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers an access time of 20ns and features a low profile flatpack package suitable for commercial applications requiring fast parallel data processing.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J8 by Integrated Device Technology

71342SA25J8

Integrated Device Technology

71342SA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation with common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF8 by Integrated Device Technology

71342SA25PF8

Integrated Device Technology

71342SA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J8 by Integrated Device Technology

71342SA35J8

Integrated Device Technology

71342SA35J8 by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 35ns access time and operates at a max supply voltage of 5.5V. It features a common I/O type, asynchronous operation mode, and offers 3-state output characteristics. Ideal for applications requiring fast memory access in commercial-grade temperature environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF8 by Integrated Device Technology

71342SA35PF8

Integrated Device Technology

71342SA35PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J8 by Integrated Device Technology

71342SA45J8

Integrated Device Technology

71342SA45J8 by Integrated Device Technology is a 4Kx8 SRAM chip with asynchronous operation and common I/O type. It operates at 5V, has a max access time of 45ns, and is ideal for applications requiring fast memory access such as networking equipment or industrial automation systems.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J8 by Integrated Device Technology

71342SA55J8

Integrated Device Technology

71342SA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade devices.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF8 by Integrated Device Technology

71342SA55PF8

Integrated Device Technology

Integrated Device Technology's 71342SA55PF8 is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package, suitable for commercial temperature grades. Ideal for applications requiring fast and reliable asynchronous memory operations in a compact form factor.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J8 by Integrated Device Technology

71342SA70J8

Integrated Device Technology

71342SA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 70ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71V25761S183BGI8 by Integrated Device Technology

71V25761S183BGI8

Integrated Device Technology

71V25761S183BGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3-STATE output. It has a package style of GRID ARRAY and is suitable for industrial applications requiring fast access times and high memory density.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e0

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

225

2.5,3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

71V3557S75BGI8 by Integrated Device Technology

71V3557S75BGI8

Integrated Device Technology

71V3557S75BGI8 by Integrated Device Technology is a 128Kx36 ZBT SRAM with 7.5ns access time, operating at 3.3V. It features synchronous operation and a memory density of 4718592 bits, suitable for industrial applications requiring fast and reliable parallel memory access.

7.5 ns

R-PBGA-B119

e0

22 mm

4718592 bit

ZBT SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

225

Not Qualified

2.36 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

71V35761S183BGG8 by Integrated Device Technology

71V35761S183BGG8

Integrated Device Technology

71V35761S183BGG8 by Integrated Device Technology is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz clock frequency. It features a 3-STATE output and operates at a voltage of 3.3V, making it suitable for high-speed memory applications in commercial-grade devices.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.03 Amp

3.14 V

SRAMs

340 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

71V35761S183BGI8 by Integrated Device Technology

71V35761S183BGI8

Integrated Device Technology

71V35761S183BGI8 by Integrated Device Technology is a CACHE SRAM with 128KX36 organization, operating at 183 MHz clock frequency. It has a max access time of 3.3 ns and is suitable for industrial applications requiring fast synchronous memory solutions.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e0

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

225

3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

7130LA25JI8 by Integrated Device Technology

7130LA25JI8

Integrated Device Technology

7130LA25JI8 by Integrated Device Technology is a 1KX8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7132LA25JI8 by Integrated Device Technology

7132LA25JI8

Integrated Device Technology

7132LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a chip carrier package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

IDT71024S12TYI8 by Integrated Device Technology

IDT71024S12TYI8

Integrated Device Technology

IDT71024S12TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.

12 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

IDT71024S15TYI8 by Integrated Device Technology

IDT71024S15TYI8

Integrated Device Technology

IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

71321LA55JI by Integrated Device Technology

71321LA55JI

Integrated Device Technology

71321LA55JI by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. Ideal for industrial applications, it features a square package shape, CMOS technology, and asynchronous operation mode.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

IDT71256L35YI8 by Integrated Device Technology

IDT71256L35YI8

Integrated Device Technology

IDT71256L35YI8 by Integrated Device Technology is a 32Kx8 SRAM with 35ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous operation. Ideal for applications requiring fast and reliable memory storage in industrial environments.

35 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.0002 Amp

2 V

SRAMs

105 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

IDT71016S12PHGI by Integrated Device Technology

IDT71016S12PHGI

Integrated Device Technology

IDT71016S12PHGI by Integrated Device Technology is a 64KX16 SRAM with an operating mode of asynchronous and common input/output type. It has a max access time of 12 ns and is commonly used in industrial applications.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71016S12PHGI8 by Integrated Device Technology

IDT71016S12PHGI8

Integrated Device Technology

IDT71016S12PHGI8 by Integrated Device Technology is a 64Kx16 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and is designed for industrial applications requiring fast and reliable memory storage. With a compact rectangular package style and surface-mount capability, it offers high performance in a small footprint.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71124S12YGI by Integrated Device Technology

IDT71124S12YGI

Integrated Device Technology

IDT71124S12YGI by Integrated Device Technology is a 128Kx8 SRAM with asynchronous operation, 3-STATE output, and 12 ns access time. It is ideal for industrial applications requiring fast and reliable memory storage in a small outline package. With a supply voltage range of 4.5V to 5.5V, this CMOS technology-based SRAM offers high performance in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71124S12YGI8 by Integrated Device Technology

IDT71124S12YGI8

Integrated Device Technology

IDT71124S12YGI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71V124SA20PHGI by Integrated Device Technology

IDT71V124SA20PHGI

Integrated Device Technology

IDT71V124SA20PHGI by Integrated Device Technology is a 128Kx8 SRAM with 3.3V supply, operating in asynchronous mode. It features a max access time of 20ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with common I/O type and 3-STATE output characteristics.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V124SA20PHGI8 by Integrated Device Technology

IDT71V124SA20PHGI8

Integrated Device Technology

IDT71V124SA20PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 20ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

10 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

CACHE SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.002 Amp

3 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

71342LA20J by Integrated Device Technology

71342LA20J

Integrated Device Technology

71342LA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF by Integrated Device Technology

71342LA20PF

Integrated Device Technology

71342LA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns in commercial temperature grade applications. Its low profile flatpack package with gull wing terminals makes it suitable for space-constrained designs requiring fast parallel data processing.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25JI by Integrated Device Technology

71342LA25JI

Integrated Device Technology

71342LA25JI by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 3-STATE output, operating at 5V. It features an access time of 25ns and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring fast and reliable memory storage in various electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25J by Integrated Device Technology

71342LA25J

Integrated Device Technology

71342LA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 25ns and features an asynchronous mode suitable for commercial applications. With a package style of CHIP CARRIER, this SRAM has a terminal pitch of 1.27mm and is designed for surface mount usage.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PFI by Integrated Device Technology

71342LA25PFI

Integrated Device Technology

71342LA25PFI by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 32768 bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 25 ns. Ideal for applications requiring fast and reliable data storage in industrial environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25PF by Integrated Device Technology

71342LA25PF

Integrated Device Technology

71342LA25PF by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bit. It operates at an asynchronous mode with a max access time of 25 ns. This multi-port SRAM is ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J by Integrated Device Technology

71342LA35J

Integrated Device Technology

71342LA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF by Integrated Device Technology

71342LA35PF

Integrated Device Technology

71342LA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile FLATPACK package. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA45J by Integrated Device Technology

71342LA45J

Integrated Device Technology

71342LA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 45 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J by Integrated Device Technology

71342LA55J

Integrated Device Technology

71342LA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can operate in asynchronous mode. Ideal for applications requiring fast memory access and common I/O type in commercial temperature environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF by Integrated Device Technology

71342LA55PF

Integrated Device Technology

71342LA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and has a package style of FLATPACK, LOW PROFILE. This SRAM is commonly used in applications that require fast and reliable memory storage.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J by Integrated Device Technology

71342LA70J

Integrated Device Technology

71342LA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a temperature grade of COMMERCIAL. Ideal for applications requiring fast and reliable data storage in commercial-grade electronic devices.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J by Integrated Device Technology

71342SA20J

Integrated Device Technology

71342SA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a square plastic/epoxy package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF by Integrated Device Technology

71342SA20PF

Integrated Device Technology

71342SA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 20ns and features an asynchronous mode suitable for commercial applications. The package style is flatpack, low profile with a square shape and gull wing terminal form.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J by Integrated Device Technology

71342SA25J

Integrated Device Technology

71342SA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time and operates at 5V. It features a square chip carrier package, CMOS technology, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF by Integrated Device Technology

71342SA25PF

Integrated Device Technology

71342SA25PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J by Integrated Device Technology

71342SA35J

Integrated Device Technology

71342SA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 35ns access time and operates at 5V. It features a square chip carrier package, suitable for applications requiring fast and reliable memory storage in commercial-grade devices. With common I/O type and 3-STATE output characteristics, it offers parallel data transfer capabilities for various electronic systems.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm