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Integrated Device Technology SRAM 112

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
71342SA35PF by Integrated Device Technology

71342SA35PF

Integrated Device Technology

71342SA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile flatpack package style. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J by Integrated Device Technology

71342SA45J

Integrated Device Technology

71342SA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J by Integrated Device Technology

71342SA55J

Integrated Device Technology

71342SA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF by Integrated Device Technology

71342SA55PF

Integrated Device Technology

71342SA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J by Integrated Device Technology

71342SA70J

Integrated Device Technology

71342SA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 4096 words, operating at 5V. It features a max access time of 70ns and offers a memory density of 32768 bits. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

IDT71256SA12YGI8 by Integrated Device Technology

IDT71256SA12YGI8

Integrated Device Technology

IDT71256SA12YGI8 by Integrated Device Technology is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

7140LA100PF8 by Integrated Device Technology

7140LA100PF8

Integrated Device Technology

7140LA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with a memory density of 8192 bit. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140LA55PF8 by Integrated Device Technology

7140LA55PF8

Integrated Device Technology

7140LA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. It operates at a max access time of 55ns and has a supply voltage range of 4.5V to 5.5V, making it ideal for applications requiring fast and reliable data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140SA55PF8 by Integrated Device Technology

7140SA55PF8

Integrated Device Technology

7140SA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile flatpack package style. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA25PFI8 by Integrated Device Technology

71421LA25PFI8

Integrated Device Technology

71421LA25PFI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 64 terminals in a flatpack package, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA55JI8 by Integrated Device Technology

71421LA55JI8

Integrated Device Technology

71421LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7142LA25JI8 by Integrated Device Technology

7142LA25JI8

Integrated Device Technology

7142LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact form factor.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

IDT71256SA12YGI by Integrated Device Technology

IDT71256SA12YGI

Integrated Device Technology

IDT71256SA12YGI by Integrated Device Technology is a 32Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and asynchronous operation, suitable for industrial applications requiring fast and reliable memory storage. With 3-state output characteristics and common I/O type, it offers high performance in a compact form factor.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

7008L20JI by Integrated Device Technology

7008L20JI

Integrated Device Technology

7008L20JI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

20 ns

COMMON

S-PQCC-J84

e0

29.3116 mm

524288 bit

MULTI-PORT SRAM

8

1

1

2

84

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.3116 mm

7008L20PFI by Integrated Device Technology

7008L20PFI

Integrated Device Technology

7008L20PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a low profile FLATPACK package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable parallel memory storage. With 3-STATE output characteristics and common I/O type, it offers high performance in an asynchronous mode.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI by Integrated Device Technology

7008S55PFI

Integrated Device Technology

7008S55PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm