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RECTANGULAR Other Function Memory ICs 158

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
ST25TA02KD-C6C5 by STMicroelectronics

ST25TA02KD-C6C5

STMicroelectronics

ST25TA02KD-C6C5 from STMicroelectronics is a compact, dual-terminal memory IC with an industrial temperature range of -40 °C to 85 °C. It features asynchronous operation, 256x8 organization, and a very thin profile (0.6mm height). Ideal for space-constrained applications in various electronic devices.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

ST25TA02KD-C6H5 by STMicroelectronics

ST25TA02KD-C6H5

STMicroelectronics

ST25TA02KD-C6H5 from STMicroelectronics is a CMOS memory IC with 256x8 organization, operating b/w -40 °C to 85 °C. It features a compact chip carrier design and asynchronous mode for efficient data access. Ideal for industrial applications requiring reliable non-volatile storage.

R-PDSO-N5

1.7 mm

2048 bit

MEMORY CIRCUIT

8

1

5

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

BCC

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.4 mm

BOTTOM

NOT SPECIFIED

1.4 mm

ST25TA02KP-C6C5 by STMicroelectronics

ST25TA02KP-C6C5

STMicroelectronics

ST25TA02KP-C6C5 from STMicroelectronics is a compact, dual-terminal memory IC with a 256x8 organization and operates asynchronously. It features an industrial temperature range of -40 °C to 85 °C and comes in a very thin profile package. Ideal for space-constrained applications requiring reliable data storage.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

MT29C4G48MAYBBAHK-48AIT by Micron Technology

MT29C4G48MAYBBAHK-48AIT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 137; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B137;

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

R-PBGA-B137

e1

13 mm

4294967296 bit

MEMORY CIRCUIT

8

1

137

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10.5 mm

47C04-E/SN by Microchip Technology

47C04-E/SN

Microchip Technology

47C04-E/SN by Microchip Technology is a small outline memory IC with 512x8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. Ideal for automotive applications, it has a supply voltage range of 4.5V to 5.5V and operates in temperatures from -40°C to 125°C.

400 ns

R-PDSO-G8

e3

4.9 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47C04-E/ST by Microchip Technology

47C04-E/ST

Microchip Technology

47C04-E/ST by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a memory density of 4096 bit and max access time of 400ns. Ideal for automotive applications due to its small outline, thin profile package style and wide temperature range from -40°C to 125°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C04-I/ST by Microchip Technology

47C04-I/ST

Microchip Technology

47C04-I/ST by Microchip Technology is a CMOS memory IC with EEPROM+SRAM, 512X8 organization, and 4096-bit memory density. It operates synchronously at temperatures ranging from -40 to 85°C. This small outline package with 0.65mm terminal pitch is ideal for industrial applications requiring fast access times.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C04T-E/SN by Microchip Technology

47C04T-E/SN

Microchip Technology

47C04T-E/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a max access time of 400ns and is suitable for automotive applications due to its temperature grade.

400 ns

R-PDSO-G8

e3

4.9 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47C04T-E/ST by Microchip Technology

47C04T-E/ST

Microchip Technology

47C04T-E/ST by Microchip Technology is a small outline, thin profile EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a max access time of 400ns and is suitable for automotive applications due to its temperature grade of -40 to 125°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C16T-I/SN by Microchip Technology

47C16T-I/SN

Microchip Technology

47C16T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with an organization of 2KX8 and a memory density of 16384 bit. It operates at a nominal voltage of 5V and has a max access time of 400 ns. This memory circuit is commonly used in industrial applications requiring reliable data storage.

400 ns

R-PDSO-G8

e3

4.9 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47L04T-I/ST by Microchip Technology

47L04T-I/ST

Microchip Technology

47L04T-I/ST by Microchip Technology is a small outline, thin profile memory IC with EEPROM+SRAM mixed memory type. Operating in synchronous mode, it offers 512x8 organization and 4096-bit memory density. Ideal for industrial applications requiring fast access times at temperatures ranging from -40 to 85°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47L16-E/P by Microchip Technology

47L16-E/P

Microchip Technology

47L16-E/P by Microchip Technology is a 2KX8 EEPROM+SRAM memory IC with 16384 bit density. Operating in synchronous mode, it has a max access time of 400 ns and operates b/w -40 to 125 °C. Ideal for automotive applications, this rectangular IN-LINE package offers reliable performance in various systems.

400 ns

R-PDIP-T8

e3

9.271 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

5.334 mm

3.6 V

2.7 V

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

47L16T-E/SN by Microchip Technology

47L16T-E/SN

Microchip Technology

47L16T-E/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 2KX8 organization. Operating at -40 to 125 °C, it has a memory density of 16384 bit and max access time of 400 ns. Ideal for automotive applications due to its small outline package style and CMOS technology.

400 ns

R-PDSO-G8

e3

4.9 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47L16T-E/ST by Microchip Technology

47L16T-E/ST

Microchip Technology

47L16T-E/ST by Microchip Technology is a CMOS memory IC with EEPROM+SRAM, operating in synchronous mode. It has an organization of 2KX8 and a memory density of 16384 bit. Ideal for automotive applications, it offers a wide temperature range from -40 to 125 °C and operates at supply voltages b/w 2.7V to 3.6V.

400 ns

R-PDSO-G8

e3

4.4 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47L16T-I/ST by Microchip Technology

47L16T-I/ST

Microchip Technology

47L16T-I/ST by Microchip Technology is a small outline memory IC with 2Kx8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is ideal for industrial applications requiring a memory density of 16384 bit, fast access time of 400 ns, and operating temperature range from -40 to 85°C.

400 ns

R-PDSO-G8

e3

4.4 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

MT29C1G12MAAIVAMD-5IT by Micron Technology

MT29C1G12MAAIVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

8

1

130

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C1G12MAAIYAMR-5AIT by Micron Technology

MT29C1G12MAAIYAMR-5AIT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B130;

LPDRAM IS ORGANISED AS 32M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

8

1

130

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C1G12MAAJVAMD-5IT by Micron Technology

MT29C1G12MAAJVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 8 mm;

IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

16

1

130

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C1G12MAAJYAMD-5IT by Micron Technology

MT29C1G12MAAJYAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

LPDRAM IS ORGANISED AS 32M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

16

1

130

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

THGBMGG9U4LBAIR by Toshiba

THGBMGG9U4LBAIR

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMGT0U8LBAIG by Toshiba

THGBMGT0U8LBAIG

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B153

1099511627776 bit

MEMORY CIRCUIT

8

1

153

137438953472 words

128G

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAIL by Toshiba

THGBMHG6C1LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAU6 by Toshiba

THGBMHG6C1LBAU6

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG7C1LBAIL by Toshiba

THGBMHG7C1LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG7C2LBAU7 by Toshiba

THGBMHG7C2LBAU7

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG8C2LBAIL by Toshiba

THGBMHG8C2LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 8;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG8C4LBAU7 by Toshiba

THGBMHG8C4LBAU7

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG9C4LBAIR by Toshiba

THGBMHG9C4LBAIR

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG9C8LBAU8 by Toshiba

THGBMHG9C8LBAU8

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHT0C8LBAIG by Toshiba

THGBMHT0C8LBAIG

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

1099511627776 bit

MEMORY CIRCUIT

8

1

153

137438953472 words

128G

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAWL by Toshiba

THGBMHG6C1LBAWL

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG7C2LBAWR by Toshiba

THGBMHG7C2LBAWR

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG8C4LBAWR by Toshiba

THGBMHG8C4LBAWR

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG9C8LBAWG by Toshiba

THGBMHG9C8LBAWG

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

ASYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

ST25TA512-AC6G5 by STMicroelectronics

ST25TA512-AC6G5

STMicroelectronics

ST25TA512-AC6G5 from STMicroelectronics is a CMOS memory IC designed for industrial applications, operating in asynchronous mode. It features a 512-bit density with a temperature range of -40 °C to 85 °C and comes in a no-lead rectangular package. Ideal for compact designs, it offers reliable performance in harsh environments.

R-XUUC-N

512 bit

MEMORY CIRCUIT

8

1

512 words

64

ASYNCHRONOUS

85 Cel

-40 Cel

64X8

DIE

DIE OR CHIP

RECTANGULAR

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UNSPECIFIED

M24SR64-YDW8T/2 by STMicroelectronics

M24SR64-YDW8T/2

STMicroelectronics

M24SR64-YDW8T/2 by STMicroelectronics is a 64KX1 memory circuit with 65536 bit memory density. It operates in synchronous mode, has a supply voltage range of 2.7V to 5.5V, and industrial temperature grade. This small outline IC with dual terminals is ideal for applications requiring secure data storage and retrieval in compact devices.

R-PDSO-G8

4.3 mm

65536 bit

MEMORY CIRCUIT

1

1

8

65536 words

64K

SYNCHRONOUS

105 Cel

-40 Cel

64KX1

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

NOT SPECIFIED

1.2 mm

5.5 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

2.9 mm

M24SR64-YMN8T/2 by STMicroelectronics

M24SR64-YMN8T/2

STMicroelectronics

M24SR64-YMN8T/2 by STMicroelectronics is a 64Kx1 memory IC with CMOS technology. It operates in synchronous mode, has 65536-bit memory density, and supports a supply voltage range of 2.7V to 5.5V. This small outline package is ideal for industrial applications requiring reliable data storage and retrieval capabilities.

R-PDSO-G8

4.9 mm

65536 bit

MEMORY CIRCUIT

1

1

8

65536 words

64K

SYNCHRONOUS

105 Cel

-40 Cel

64KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.75 mm

5.5 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

M24SR64-YSG12I/2 by STMicroelectronics

M24SR64-YSG12I/2

STMicroelectronics

M24SR64-YSG12I/2 by STMicroelectronics is a synchronous memory IC with 8Kx8 organization and 65536-bit memory density. Operating at 3.3V, it is suitable for applications requiring uncased chip package style and CMOS technology. Ideal for surface mount setups, this rectangular-shaped IC supports a wide supply voltage range from 2.7V to 5.5V.

R-XUUC-N

65536 bit

MEMORY CIRCUIT

8

1

8192 words

8K

SYNCHRONOUS

8KX8

DIE

DIE OR CHIP

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

5.5 V

2.7 V

3.3

YES

CMOS

UNSPECIFIED

NOT SPECIFIED

2988146 by Phoenix Contact

2988146

Phoenix Contact

MEMORY CIRCUIT; Package Code: DIE; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; No. of Words Code: 512M; Surface Mount: YES;

R-XUUC-N

4294967296 bit

MEMORY CIRCUIT

8

1

536870912 words

512M

ASYNCHRONOUS

512MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

NO LEAD

UPPER

NOT SPECIFIED

MT29C2G24MAAAAHAMD-5IT by Micron Technology

MT29C2G24MAAAAHAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C2G24MAABAHAMD-5EIT by Micron Technology

MT29C2G24MAABAHAMD-5EIT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Additional Features: ALSO ORGANISED AS 64M X 16;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

8 mm

MT29C2G24MAABAHAMD-5IT by Micron Technology

MT29C2G24MAABAHAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C2G24MAABAKAMD-5IT by Micron Technology

MT29C2G24MAABAKAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 32;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

8 mm

MT29C4G48MAZBAAKS-5WT by Micron Technology

MT29C4G48MAZBAAKS-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C4G96MAYBACKD-5WT by Micron Technology

MT29C4G96MAYBACKD-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C4G96MAZBACKD-5WT by Micron Technology

MT29C4G96MAZBACKD-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10.5 mm;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C8G96MAZBADKD-5IT by Micron Technology

MT29C8G96MAZBADKD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C8G96MAZBADKD-5WT by Micron Technology

MT29C8G96MAZBADKD-5WT

Micron Technology

MT29C8G96MAZBADKD-5WT by Micron Technology is a 64MX32 memory IC with 67108864 words and 2147483648 bit memory density. Operating at 1.7-1.95V, it has a synchronous mode and thin profile grid array package shape. Ideal for applications requiring high-speed data processing in compact electronic devices.

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm