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RECTANGULAR Other Function Memory ICs 158

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
MT29C1G12MAACVAMD-5IT by Micron Technology

MT29C1G12MAACVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

NAND FLASH IS ORGANISED AS 64M X 16

R-PBGA-B130

e1

9 mm

536870912 bit

MEMORY CIRCUIT

32

1

130

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

8 mm

MT29C1G12MAACYAMD-5IT by Micron Technology

MT29C1G12MAACYAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

NAND FLASH IS ORGANISED AS 64M X 16

R-PBGA-B130

e1

9 mm

536870912 bit

MEMORY CIRCUIT

32

1

130

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

8 mm

MT29C1G12MAADVAMD-5IT by Micron Technology

MT29C1G12MAADVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

NAND FLASH IS ORGANISED AS 64M X 16

R-PBGA-B130

e1

9 mm

536870912 bit

MEMORY CIRCUIT

32

1

130

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

8 mm

EMD3D256M08G1-150CBS1R by Everspin Technologies

EMD3D256M08G1-150CBS1R

Everspin Technologies

EMD3D256M08G1-150CBS1R by Everspin: 32MX8 memory IC with 268MB density, operates at 1.5V, synchronous mode. Ideal for applications requiring high-speed and reliable memory storage in compact devices.

R-PBGA-B78

13 mm

268435456 bit

MEMORY CIRCUIT

8

1

78

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

ST25TB04K-AC6G6 by STMicroelectronics

ST25TB04K-AC6G6

STMicroelectronics

ST25TB04K-AC6G6 from STMicroelectronics is a CMOS memory IC with 4K words and operates asynchronously. It features a -40 °C to 85 °C industrial temp range and comes in a no-lead, rectangular package. Ideal for compact applications requiring reliable data storage.

R-XUUC-N4

4096 bit

MEMORY CIRCUIT

1

1

4

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX1

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

MB85AS4MTPF-G-BCERE1 by Fujitsu

MB85AS4MTPF-G-BCERE1

Fujitsu

Fujitsu's MB85AS4MTPF-G-BCERE1 is a 512KX8 memory IC with CMOS technology. Operating at 3.3V, it has a memory density of 4194304 bit and supports synchronous operation. Ideal for industrial applications, this small outline package measures 5.85mm x 5.3mm with a max temperature of 85°C.

R-PDSO-G8

5.85 mm

4194304 bit

MEMORY CIRCUIT

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.73 mm

3.6 V

1.65 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.3 mm

MR45V200BRAZAARL by Lapis Semiconductor

MR45V200BRAZAARL

Lapis Semiconductor

MR45V200BRAZAARL by Lapis Semiconductor is a 256KX8 memory IC with CMOS technology. Operating at 3.3V, it has an industrial temperature grade and offers 2097152 bits of memory density. Ideal for applications requiring synchronous operation in industrial settings.

R-PDIP-T8

9.2 mm

2097152 bit

MEMORY CIRCUIT

8

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

3.6 V

2.7 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

RP-SMLE04DA1 by Panasonic

RP-SMLE04DA1

Panasonic

The Panasonic RP-SMLE04DA1 is a rectangular, surface-mount memory IC with 4GX8 organization and 8-bit memory width. Operating asynchronously from -25°C to 85°C, it offers a memory density of 34.36 Gb for various applications requiring high-speed data storage and retrieval in compact electronic devices.

R-XUUC-N

34359738368 bit

MEMORY CIRCUIT

8

1

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-25 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

MR44V100AMAZAATL by Lapis Semiconductor

MR44V100AMAZAATL

Lapis Semiconductor

MR44V100AMAZAATL by Lapis Semiconductor is a 128KX8 MEMORY CIRCUIT with 1048576 bit Memory Density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and is ideal for industrial applications requiring small outline, low profile Package Style.

R-PDSO-G8

4.9 mm

1048576 bit

MEMORY CIRCUIT

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

LSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

1.65 mm

3.6 V

1.8 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

MR45V032AMAZBATL by Lapis Semiconductor

MR45V032AMAZBATL

Lapis Semiconductor

MR45V032AMAZBATL by Lapis Semiconductor is a small outline, low profile memory IC with a capacity of 4096 words and a memory density of 32768 bits. It operates synchronously at a nominal voltage of 3.3V and can withstand temperatures ranging from -40 to 85°C. This memory circuit is commonly used in industrial applications requiring compact and reliable storage solutions.

R-PDSO-G8

4.9 mm

32768 bit

MEMORY CIRCUIT

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

LSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

1.65 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

HMC-EF183 by Omron

HMC-EF183

Omron

Omron's HMC-EF183 is a 128MX8 memory IC with 1073741824-bit density. It features CMOS technology, surface mount compatibility, and rectangular package style. Ideal for applications requiring high memory capacity in compact designs.

R-XUUC-N

1073741824 bit

MEMORY CIRCUIT

8

1

134217728 words

128M

128MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

NO LEAD

UPPER

NOT SPECIFIED

MT29C1G12MAAIVAMD-5ITTR by Micron Technology

MT29C1G12MAAIVAMD-5ITTR

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

LPDRAM IS ORGANISED AS 32M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

8

1

130

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

47L64-I/SN by Microchip Technology

47L64-I/SN

Microchip Technology

47L64-I/SN by Microchip Technology is a small outline memory IC with 8KX8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is suitable for industrial applications requiring a memory density of 65536 bit, fast access time of 550 ns, and a supply voltage range from 2.7V to 3.6V.

550 ns

R-PDSO-G8

4.9 mm

65536 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

1.75 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

MF1SEP1001DA4/03J by NXP Semiconductors

MF1SEP1001DA4/03J

NXP Semiconductors

NFC/RFID TAGS AND TRANSPONDERS; Package Code: XMA; Package Shape: RECTANGULAR; Organization: 1KX8; Terminal Form: NO LEAD; Operating Mode: ASYNCHRONOUS;

R-PXMA-N

8192 bit

NFC/RFID TAGS AND TRANSPONDERS

8

1

1024 words

1K

ASYNCHRONOUS

70 Cel

-25 Cel

1KX8

PLASTIC/EPOXY

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

NO LEAD

UNSPECIFIED