Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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W632GU6NB12I
Winbond Electronics
The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
R-PBGA-B96
13 mm
2147483648 bit
DDR3L DRAM
16
1
96
134217728 words
128M
SYNCHRONOUS
95 Cel
-40 Cel
128MX16
PLASTIC/EPOXY
VFBGA
RECTANGULAR
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
NOT SPECIFIED
1 mm
1.45 V
1.283 V
1.35
YES
CMOS
INDUSTRIAL
BALL
.8 mm
BOTTOM
7.5 mm
IS43QR16256B-083RBL
Integrated Silicon Solution
IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
DUAL BANK PAGE BURST
1200.48 MHz
COMMON
8
13.5 mm
4294967296 bit
DDR4 DRAM
268435456 words
256M
0 Cel
256MX16
3-STATE
TFBGA
BGA96,9X16,32
GRID ARRAY, THIN PROFILE, FINE PITCH
260
1.2 mm
.058 Amp
1.14 V
375 mA
1.26 V
1.2
OTHER
MT40A256M16LY-062EAAT:F
Micron Technology
Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
105 Cel
OPEN-DRAIN
AEC-Q100
.048 Amp
58 mA
MT40A256M16LY-062EAIT:F
Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.
.046 Amp
56 mA
MT40A256M16LY-062EAUT:F
Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
125 Cel
.05 Amp
60 mA
AUTOMOTIVE
MT40A512M8SA-062EAAT:F
Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.
R-PBGA-B78
e1
11 mm
78
536870912 words
512M
512MX8
BGA78,9X13,32
.047 Amp
51 mA
TIN SILVER COPPER
30
MT40A512M8SA-062EAIT:F
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
.045 Amp
49 mA
MT40A512M8SA-062EAUT:F
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
.049 Amp
53 mA
MTA9ASF2G72PZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;
SINGLE BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX
R-XDMA-N288
133.35 mm
154618822656 bit
DDR4 DRAM MODULE
72
288
2147483648 words
2G
2GX72
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
31.4 mm
NO
NO LEAD
DUAL
3.9 mm
MTA18ASF2G72PZ-3G2J3
Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.
1600 MHz
DIMM288,33
MTA9ASF1G72PZ-3G2J3
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
77309411328 bit
DDR DRAM MODULE
1073741824 words
1G
1GX72
AS4C256M16D4-75BCN
Alliance Memory
Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
1333 MHz
8192
.044 Amp
235 mA
AS4C512M8D4-75BCN
Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
10.6 mm
196 mA
AS4C512M8D4-75BIN
Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C512M8D4-83BIN
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
1200 MHz
.04 Amp
187 mA
MTA16ATF4G64AZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
274877906944 bit
64
4294967296 words
4G
4GX64
MTA36ASF8G72PZ-2G9B1
DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
618475290624 bit
DRAM MODULE
8589934592 words
8G
8GX72
MTA4ATF1G64AZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 1073741824 words;
68719476736 bit
1GX64
IS43TR16512S2DL-125KBLI
IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
800 MHz
4,8
8589934592 bit
512MX16
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.4 mm
246 mA
9 mm
IS43TR16256B-125KBLI-TR
IS43TR16256B-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data access speeds.
DDR3 DRAM
3
.029 Amp
1.425 V
276 mA
1.575 V
1.5
Tin/Silver/Copper (Sn/Ag/Cu)
10
IS43TR16256A-125KBLI-TR
IS43TR16256A-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.5V supply voltage, operating at -40 to 95 °C. It features synchronous operation, common I/O type, and 4/8 sequential burst length. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.
4, 8
BGA96,6X16,32
.057 Amp
MT46V16M16CY-5B:KTR
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;
FOUR BANK PAGE BURST
.7 ns
R-PBGA-B60
12.5 mm
268435456 bit
DDR1 DRAM
60
16777216 words
16M
70 Cel
16MX16
TBGA
GRID ARRAY, THIN PROFILE
2.7 V
2.5 V
2.6
COMMERCIAL
8 mm
IS43LD32128B-25BLI
IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.
also operates with 1.8v nom supply
400 MHz
4,8,16
R-PBGA-B134
11.5 mm
LPDDR2 DRAM
32
134
85 Cel
128MX32
BGA134,10X17,25
1.1 mm
1.3 V
.65 mm
10 mm
IS43QR16256B-075UBLI
IS43QR16256B-075UBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1333.33 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1333.33 MHz
.062 Amp
385 mA
IS43QR16256B-075UBL
IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.
IS43QR16512A-075VBLI
IS43QR16512A-075VBLI by Integrated Silicon Solution is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
14 mm
65536
.025 Amp
IS43QR16512A-075VBL
IS43QR16512A-075VBL by Integrated Silicon Solution is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT41K512M16VRN-107AAT:PTR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
934.57 MHz
.022 Amp
304 mA
MT41K512M16VRN-107AIT:PTR
Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.
MT41K512M8DA-093:PTR
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
1066 MHz
10.5 mm
.012 Amp
150 mA
MT48LC4M32B2P-6AAAT:LTR
SYNCHRONOUS DRAM; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR; Organization: 4MX32;
5.4 ns
167 MHz
1,2,4,8
R-PDSO-G86
e3
22.22 mm
134217728 bit
SYNCHRONOUS DRAM
86
4194304 words
4M
4MX32
TSOP2
TSOP86,.46,20
SMALL OUTLINE, THIN PROFILE
4096
1,2,4,8,FP
120 mA
3.6 V
3 V
3.3
MATTE TIN
GULL WING
.5 mm
10.16 mm
MT53E256M32D2DS-053AIT:BTR
LPDDR4X DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit; Interleaved Burst Length: 16,32;
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
1866 MHz
16,32
R-PBGA-B200
14.5 mm
LPDDR4X DRAM
200
256MX32
BGA200,12X20,32/25
1.17 V
1.06 V
1.1
MT61K512M32KPA-14:BTR
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; Access Mode: MULTI BANK PAGE BURST;
AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY
R-PBGA-B180
17179869184 bit
GDDR6 DRAM
180
512MX32
BGA180,14X18,30
1.3905 V
1.3095 V
.75 mm
12 mm
MT61K512M32KPA-16:BTR
Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
IS43TR16256BL-107MBLI-TR
IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
934.5 MHz
.028 Amp
254 mA
IS43TR16256BL-125KBLI-TR
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
228 mA
IS43TR16256BL-125KBL-TR
IS43TR16256BL-125KBL-TR by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and is suitable for applications requiring high memory density and low power consumption.
IS46TR16256BL-125KBLA2-TR
IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT40A1G16KNR-075:ETR
MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
1GX16
.036 Amp
360 mA
MT40A1G8SA-062EAAT:ETR
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
1GX8
MT40A1G8WE-075EAIT:BTR
Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
149 mA
MT40A1G8WE-075E:BTR
Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.
BGA78,6X13,32
63 mA
MT40A1G8WE-083EAAT:BTR
MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
1200.4 MHz
138 mA
MT40A1G8WE-083EAIT:BTR
Micron Technology's MT40A1G8WE-083EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial environments.
MT40A1G8WE-083EAUT:BTR
Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.
MT40A1G8WE-083E:BTR
Micron Technology's MT40A1G8WE-083E:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.48 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices with a max temperature of 95°C.
.034 Amp
175 mA
MT40A256M16GE-075EAIT:BTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1333.33 MHz; Operating Mode: SYNCHRONOUS;
MT40A256M16GE-083EAIT:BTR
Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
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