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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT47H64M8CB-37EIT:B by Micron Technology

MT47H64M8CB-37EIT:B

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H64M8CB-5EIT:B by Micron Technology

MT47H64M8CB-5EIT:B

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

220 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT49H16M18CFM-5IT by Micron Technology

MT49H16M18CFM-5IT

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 301989888 bit;

MULTI BANK PAGE BURST

.5 ns

AUTO REFRESH

200 MHz

SEPARATE

2,4,8

R-PBGA-B144

e0

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.5/1.8,1.8,2.5

Not Qualified

.93 mm

.026 Amp

DRAMs

597 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT18KSF1G72PDZ-1G6N1 by Micron Technology

MT18KSF1G72PDZ-1G6N1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT41J64M16TW-093:J by Micron Technology

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT47H256M8THN-25E:M by Micron Technology

MT47H256M8THN-25E:M

Micron Technology

DDR2 DRAM; No. of Terminals: 63; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Package Equivalence Code: BGA63,9X11,32;

DUAL BANK PAGE BURST

SELF REFRESH

400 MHz

COMMON

R-PBGA-B63

10 mm

2147483648 bit

DDR2 DRAM

8

1

1

63

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TFBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

.02 Amp

230 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT46V128M4BN-6:F by Micron Technology

MT46V128M4BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5B:F by Micron Technology

MT46V32M16BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5BIT:F by Micron Technology

MT46V32M16BN-5BIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5BLIT:F by Micron Technology

MT46V32M16BN-5BLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-6IT:F by Micron Technology

MT46V32M16BN-6IT:F

Micron Technology

Micron Technology's MT46V32M16BN-6IT:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-5B:F by Micron Technology

MT46V32M16FN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6:F by Micron Technology

MT46V32M16FN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6IT:F by Micron Technology

MT46V32M16FN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46V32M16P-5B:F by Micron Technology

MT46V32M16P-5B:F

Micron Technology

Micron Technology's MT46V32M16P-5B:F is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast memory access and high data transfer rates in commercial-grade devices.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6TIT:F by Micron Technology

MT46V32M16P-6TIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6TL:F by Micron Technology

MT46V32M16P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-6TLIT:F by Micron Technology

MT46V32M16P-6TLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-5B:F by Micron Technology

MT46V32M16TG-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-6T:F by Micron Technology

MT46V32M16TG-6T:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16TG-6TIT:F by Micron Technology

MT46V32M16TG-6TIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8BN-5B:F by Micron Technology

MT46V64M8BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6:F by Micron Technology

MT46V64M8BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8BN-6IT:F by Micron Technology

MT46V64M8BN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6L:F by Micron Technology

MT46V64M8BN-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-6IT:F by Micron Technology

MT46V64M8FN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8P-5B:F by Micron Technology

MT46V64M8P-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-5BLIT:F by Micron Technology

MT46V64M8P-5BLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-6T:F by Micron Technology

MT46V64M8P-6T:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6TIT:F by Micron Technology

MT46V64M8P-6TIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6TL:F by Micron Technology

MT46V64M8P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-6TL:F by Micron Technology

MT46V64M8TG-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT72KSZS2G72PZ-1G1D1 by Micron Technology

MT72KSZS2G72PZ-1G1D1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.3 ns

AUTO/SELF REFRESH

533 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

154618822656 bit

DDR3L DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

4 mm

YES

.864 Amp

DRAMs

7130 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

30.175 mm

MT46H8M16LFCF-10IT by Micron Technology

MT46H8M16LFCF-10IT

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

100 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M16LFCF-10 by Micron Technology

MT46H8M16LFCF-10

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

100 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M16LFCF-75IT by Micron Technology

MT46H8M16LFCF-75IT

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

105 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M16LFCF-75 by Micron Technology

MT46H8M16LFCF-75

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

105 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V128M8P-6T:A by Micron Technology

MT46V128M8P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

8

3

1

1

66

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V256M4P-6T:A by Micron Technology

MT46V256M4P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

4

1

1

66

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-6T:A by Micron Technology

MT46V64M16P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

535 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-75:A by Micron Technology

MT46V64M16P-75:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

495 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V128M8P-6TIT:A by Micron Technology

MT46V128M8P-6TIT:A

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

8

1

1

66

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-6TIT:A by Micron Technology

MT46V64M16P-6TIT:A

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

535 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT48LC2M32B2B5-7:G by Micron Technology

MT48LC2M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

225 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT72JSZS2G72PZ-1G1D1 by Micron Technology

MT72JSZS2G72PZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

533 MHz

COMMON

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

30.5 mm

YES

DRAMs

6732 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

30 mm

MT8HTF12864AZ-800H1 by Micron Technology

MT8HTF12864AZ-800H1

Micron Technology

DDR2 DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N240

e4

8589934592 bit

DDR2 DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

YES

DRAMs

1680 mA

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

MT9JSF25672AZ-1G1D1 by Micron Technology

MT9JSF25672AZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.3 ns

AUTO/SELF REFRESH

533 MHz

COMMON

R-XDMA-N240

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

YES

.108 Amp

Other Memory ICs

2880 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL