Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MT46H16M16LFBF-6IT:A
Micron Technology
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
FOUR BANK PAGE BURST
5 ns
AUTO/SELF REFRESH
166 MHz
COMMON
2,4,8
R-PBGA-B60
e1
9 mm
268435456 bit
DDR1 DRAM
16
1
60
16777216 words
16M
SYNCHRONOUS
85 Cel
-40 Cel
16MX16
3-STATE
PLASTIC/EPOXY
VFBGA
BGA60,9X10,32
RECTANGULAR
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.8
Not Qualified
8192
1 mm
YES
.00001 Amp
DRAMs
100 mA
1.95 V
1.7 V
CMOS
INDUSTRIAL
TIN SILVER COPPER
BALL
.8 mm
BOTTOM
8 mm
MT46H16M16LFBF-75:A
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
6 ns
133 MHz
70 Cel
0 Cel
260
COMMERCIAL
Tin/Silver/Copper (Sn/Ag/Cu)
30
MT47H128M4CF-25E:G
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
.4 ns
400 MHz
4,8
10 mm
536870912 bit
DDR2 DRAM
4
134217728 words
128M
128MX4
TFBGA
BGA60,9X11,32
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
.007 Amp
150 mA
1.9 V
OTHER
MT47H32M16HR-25E:G
Micron Technology's MT47H32M16HR-25E:G is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.
R-PBGA-B84
12.5 mm
3
84
33554432 words
32M
32MX16
BGA84,9X15,32
215 mA
MT47H32M16HR-25EIT:G
Micron Technology's MT47H32M16HR-25EIT:G is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers common I/O type for synchronous operation. Ideal for industrial applications requiring high-speed memory access in a compact grid array package.
MT47H32M16HR-25EL:G
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT47H32M16HR-3:G
.45 ns
333 MHz
MT47H32M16HW-25E:G
e0
235
Tin/Lead/Silver (Sn/Pb/Ag)
MT47H32M16HW-25EIT:G
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT47H64M8CF-25E:G
8
67108864 words
64M
64MX8
MT47H64M8CF-25EIT:G
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT47H64M8CF-25EL:G
MT47H64M8JN-25E:G
TIN LEAD SILVER
MT47H64M8JN-25EIT:G
IS43R16320D-6BL
Integrated Silicon Solution
IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
.7 ns
13 mm
TBGA
BGA60,9X12,40/32
GRID ARRAY, THIN PROFILE
2.5
.025 Amp
370 mA
2.7 V
2.3 V
IS43R16320D-6TLI
IS43R16320D-6TLI by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with 166 MHz clock frequency. Operating at 2.5V, it offers a memory density of 536870912 bits for industrial applications. Featuring synchronous operation and self-refresh capability, this DRAM has a small outline package style ideal for common I/O types.
R-PDSO-G66
e3
22.22 mm
66
TSOP2
TSSOP66,.46
SMALL OUTLINE, THIN PROFILE
MATTE TIN
GULL WING
.65 mm
DUAL
10.16 mm
MT36KDZS1G72PZ-1G4D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
DUAL BANK PAGE BURST
667 MHz
R-XDMA-N240
e4
77309411328 bit
DDR DRAM MODULE
72
240
1073741824 words
1G
1GX72
UNSPECIFIED
DIMM
DIMM240,40
MICROELECTRONIC ASSEMBLY
1.35
.432 Amp
Other Memory ICs
7236 mA
1.45 V
1.283 V
NO
Gold (Au)
NO LEAD
MT4HTF6464AZ-667H1
SINGLE BANK PAGE BURST
133.35 mm
4294967296 bit
64
64MX64
30.5 mm
.028 Amp
920 mA
30.175 mm
IS43DR16160A-3DBLI
IS43DR16160A-3DBLI by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. It operates at 1.8V, has 84 terminals in a grid array package, and supports synchronous mode. Ideal for industrial applications requiring high memory density and fast access times.
.005 Amp
330 mA
MT48LC2M32B2B5-7IT:G
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
5.5 ns
143 MHz
1,2,4,8
R-PBGA-B90
67108864 bit
SYNCHRONOUS DRAM
32
90
2097152 words
2M
2MX32
BGA90,9X15,32
3.3
4096
1,2,4,8,FP
.002 Amp
225 mA
3.6 V
3 V
MT48LC4M16A2TG-75IT:GTR
Micron Technology's MT48LC4M16A2TG-75IT:GTR is a 3.3V, 4MX16 Synchronous DRAM with 85 °C max temp. Ideal for industrial applications, it features self-refresh mode, 5.4 ns access time, and operates in synchronous mode with a memory width of 16 bits.
5.4 ns
R-PDSO-G54
54
4194304 words
4M
4MX16
TIN LEAD
MT47H256M8EB-25EIT:C
Micron Technology's MT47H256M8EB-25EIT:C is a 256MX8 DDR2 DRAM with 1.8V supply, operating at up to 400MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MULTI BANK PAGE BURST
11.5 mm
2147483648 bit
268435456 words
256M
256MX8
.012 Amp
250 mA
MTA18ADF2G72PDZ-3G2E1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;
AUTO/SELF REFRESH; WD-MAX
1600 MHz
R-XDMA-N288
133.25 mm
154618822656 bit
DDR4 DRAM MODULE
288
2147483648 words
2G
95 Cel
2GX72
DIMM288,24
18.9 mm
1.26 V
1.14 V
1.2
.6 mm
3.9 mm
MTA36ASF2G72PZ-2G6F1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
1333 MHz
31.4 mm
MT40A1G16KNR-062E:E
Micron Technology's MT40A1G16KNR-062E:E is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Suitable for applications requiring high-speed data processing in devices with limited space and power constraints.
AUTO REFRESH
R-PBGA-B96
13.5 mm
17179869184 bit
DDR4 DRAM
96
1GX16
7.5 mm
MT40A1G16KNR-075:E
MT40A1G16KNR-075:E by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Ideal for applications requiring high-speed and efficient memory performance in electronic devices.
NOT SPECIFIED
MT40A512M16JY-062EIT:B
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
14 mm
8589934592 bit
536870912 words
512M
512MX16
BGA96,9X16,32
65536
MT48LC16M16A2P-7EAIT:G
Micron Technology's MT48LC16M16A2P-7EAIT:G is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, four bank page burst access, and offers 268MB memory density. Ideal for industrial applications requiring fast data processing in compact systems.
MT46V64M8P-5BAIT:J
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Self Refresh: YES;
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
2.5 V
2.6
MTA9ADF1G72PKIZ-3G2E1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;
R-PDMA-N288
80 mm
4 mm
MTA16ATF2G64AZ-3G2J1
Micron Technology's MTA16ATF2G64AZ-3G2J1 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1612 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in microelectronic assemblies.
1612 MHz
137438953472 bit
2GX64
MTA16ATF2G64HZ-3G2J1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
R-XDMA-N260
69.6 mm
30.13 mm
3.7 mm
MTA4ATF51264AZ-3G2J1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;
1612.903 MHz
34359738368 bit
512MX64
2.7 mm
MTA4ATF51264HZ-3G2J1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;
2.5 mm
AS4C4M16SA-7TCNTR
Alliance Memory
AS4C4M16SA-7TCNTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization and 16-bit memory width. Operating at temperatures from 0 to 70°C, it features self-refresh mode and offers a memory density of 67108864 bits. Ideal for applications requiring fast access times and high memory capacity in compact spaces.
Tin (Sn)
MT41K256M16TW-107AT:P
Micron Technology's MT41K256M16TW-107AT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile grid array packages.
DDR3L DRAM
105 Cel
256MX16
MTA8ATF1G64HZ-3G2J1
Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.
68719476736 bit
1GX64
MT41K512M16VRN-107AAT:P
Micron Technology's MT41K512M16VRN-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at up to 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
934.57 MHz
AEC-Q100
.022 Amp
304 mA
MT61K512M32KPA-16:B
Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.
AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V
R-PBGA-B180
GDDR6 DRAM
180
512MX32
BGA180,14X18,30
1.2875 V
1.2125 V
1.25
.75 mm
12 mm
MT40A4G4DVN-062H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;
R-PBGA-B78
78
4294967296 words
4G
4GX4
BGA
GRID ARRAY
MT40A8G4CLU-062H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;
8589934592 words
8G
8GX4
MT40A8G4CLU-075H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;
IS43QR16512A-083TBLI
IS43QR16512A-083TBLI by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1200 MHz
DDR DRAM
353 mA
IS43QR16512A-083TBL
IS43QR16512A-083TBL by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in compact electronic devices.
W632GG6NB-12
Winbond Electronics
The Winbond Electronics W632GG6NB-12 is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for synchronous multi-bank page burst applications. With a memory density of 2147483648 bits and 16-bit memory width, it offers high performance in compact dimensions.
DDR3 DRAM
128MX16
1.575 V
1.425 V
1.5
W632GG6NB12I
The Winbond Electronics W632GG6NB12I is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.
W632GG6NB12J
Winbond Electronics' W632GG6NB12J is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style, suitable for industrial applications requiring high memory density and multi-bank page burst access mode. With a temperature range of -40 to 105°C, it offers synchronous operation in a compact form factor.
W632GU6NB11I
Winbond Electronics' W632GU6NB11I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style, suitable for industrial applications due to its wide temperature range of -40 to 95°C and multi-bank page burst access mode.
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