Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MTA16ATF2G64AZ-3G2J1 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1612 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in microelectronic assemblies.
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The rectangular package shape allows for efficient stacking and arrangement of multiple DRAM modules in a system, maximizing space utilization.
Synchronous operation ensures precise timing and coordination between the memory controller and the DRAM module, leading to faster and more reliable data transfers.
Self-refresh capability helps in reducing power consumption when the DRAM module is not actively being accessed, improving overall energy efficiency.
Operating at a nominal supply voltage of 1.2V strikes a balance between performance and power consumption, making the DRAM module energy-efficient.
Having 288 terminals allows for a high level of connectivity and data transfer between the DRAM module and other system components, enhancing overall performance.
The high maximum clock frequency enables the DRAM module to process data at a faster rate, leading to improved system responsiveness and multitasking capabilities.
With a high memory density of 137438953472 bits, this DRAM module offers ample storage capacity for handling large amounts of data and running memory-intensive applications.
DRAM MTA16ATF2G64AZ-3G2J1 attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
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MTA16ATF2G64AZ-3G2J1 Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Memory 24-May-2022 Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
2N2222A
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CN
Rochester Electronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
2N7002
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
AH180-WG-7
Diodes Incorporated
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Unitrode
LM555CM
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
KM416C256AJ-7
Samsung
Samsung's KM416C256AJ-7 is a 256Kx16 DRAM with 70ns access time and operates at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high-speed memory with 512 refresh cycles and common I/O type.
MT48LC8M16A2P-75IT
Micron Technology
MT48LC8M16A2P-75IT by Micron Technology is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max clock frequency of 133 MHz and has a max access time of 5.4 ns. This memory module is commonly used in industrial applications requiring high-speed data storage and retrieval.
MT48LC16M16A2B4-6AIT:G
MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
MTA8ATF1G64HZ-3G2J1
Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.
IS43TR16256BL-125KBL
Integrated Silicon Solution
IS43TR16256BL-125KBL by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for surface mount applications. With a memory density of 4294967296 bit, it is ideal for multi-bank page burst access in various electronic devices.
MT48LC8M16A2P-75IT:G
Micron Technology's MT48LC8M16A2P-75IT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact designs.
S70KL1282DPBHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
IS43QR16256B-083RBLI
IS43QR16256B-083RBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT48LC8M16A2TG-7EIT:G
Micron Technology's MT48LC8M16A2TG-7EIT:G is a 3.3V, 8MX16 Synchronous DRAM with 143 MHz clock frequency and -40 to 85°C operating range. It features 4-bank page burst access mode, ideal for industrial applications requiring high-speed memory performance.
K4W1G1646G-BC11
Samsung's K4W1G1646G-BC11 DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and large memory capacity.
S27KS0642GABHI023
Infineon Technologies
Infineon's S27KS0642GABHI023 DRAM features 8MX8 organization, 200 MHz clock frequency, and 67108864 bit memory density. Ideal for applications requiring high-speed synchronous operation in a compact form factor with low power consumption.
K4S511632D-UC75
Samsung's K4S511632D-UC75 is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it features synchronous operation, self-refresh capability, and a small outline package style.
MT40A1G16KH-062EAIT:E
Micron Technology's MT40A1G16KH-062EAIT:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features common I/O type, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory in automotive and industrial environments.
MT46V16M16P-6TIT:F
Micron Technology's MT46V16M16P-6TIT:F is a DDR1 DRAM with 16MX16 organization, operating at 167 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC8M16A2P-75:G
Micron Technology's MT48LC8M16A2P-75:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 133MHz clock frequency. It features common I/O type, self-refresh mode, and small outline package shape. Ideal for commercial applications requiring fast memory access and low power consumption.
AS4C512M16D3LB-12BIN
Alliance Memory
Alliance Memory's AS4C512M16D3LB-12BIN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
TC514400AP-70
Toshiba
Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.
MT16JSF25664HY-1G4D1
Micron Technology's MT16JSF25664HY-1G4D1 is a 256MX64 DDR DRAM MODULE with 17179869184-bit memory density. Operating at 1.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package offers dual bank page burst access mode and CMOS technology.
MT40A2G8AG-062EAUT:F
Micron Technology's MT40A2G8AG-062EAUT:F is a DDR4 DRAM with 2GX8 organization, operating at a max clock frequency of 1600 MHz. It has a memory density of 17.18 Gb and is suitable for applications requiring high-speed synchronous memory.
IS43TR16256B-125KBLI
IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.
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MTA16ATF2G64HZ-2G6E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Shape: RECTANGULAR; Maximum Seated Height: 30.13 mm; Memory Width: 64;
MTA18ASF4G72HZ-3G2F1
Micron Technology's MTA18ASF4G72HZ-3G2F1 is a DDR4 DRAM module with 4GX72 organization, operating at 1612.9 MHz. It features synchronous operation, self-refresh capability, and a common I/O type. Ideal for high-performance computing applications requiring fast data processing and storage.
MTA18ASF2G72AZ-2G3A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;
MTA18ASF2G72PZ-3G2J3
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;
MTA16ATF4G64AZ-2G6B1
DRAM MODULE;
MTA18ADF2G72AZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;
MTA18ASF2G72AZ-2G3B1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 2147483648 words;
MTA18ASF2G72PDZ-2G6E1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Input/Output Type: COMMON;
MTA16ATF1G64AZ-2G3A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;
MTA144ASQ16G72PSZ-2S6G1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MTA16ATF1G64AZ-2G3XX
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
MTA16ATF1G64AZ-2G1XX
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;
MTA144ASQ16G72PSZ-2S6E1
DDR4 DRAM MODULE;
MTA16ATF1G64AZ-2G3B1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
MTA144ASQ16G72LSZ-2S9E1
MTA16ATF1G64AZ-2G4XX
DDR DRAM MODULE; No. of Terminals: 284; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2; No. of Words: 1073741824 words;
MTA144ASQ16G72LSZ-2S6G1
DDR4 DRAM;
MTA144ASQ16G72LSZ-2S9XX
DDR4 DRAM MODULE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MTA144ASQ16G72PSZ-2S9XX
DDR DRAM MODULE;
MTA144ASQ16G72PSZ-3S2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;
Supply Digital Components
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$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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