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MTA16ATF2G64AZ-3G2J1

Micron Technology

MTA16ATF2G64AZ-3G2J1 by Micron Technology

Micron Technology's MTA16ATF2G64AZ-3G2J1 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1612 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in microelectronic assemblies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 5,011 parts In-Stock

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5,011

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Vyrian

USA . 2,405 parts In-Stock

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2,405

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Digiode

USA . 2,361 parts In-Stock

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2,361

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Nova Conductors

Japan . 36 parts In-Stock

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36

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 102 parts In-Stock

1+ parts

$10.890

100+ parts

-

1k+ parts

$10.454

10k+ parts

$10.454

102

$10.890

-

$10.454

$10.454

AZTECH Wire

Italy . 420 parts In-Stock

1+ parts

$13.260

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420

$13.260

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Ampacity Inc.

Singapore . 789 parts In-Stock

1+ parts

$28.000

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789

$28.000

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Infinite Electronics LLP (Excess)

. 10,001 parts In-Stock

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10,001

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 784 parts In-Stock

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784

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Overview

Experience seamless and lightning-fast performance with the Micron Technology MTA16ATF2G64AZ-3G2J1 DDR4 DRAM module. Crafted by a renowned manufacturer, this memory module promises reliability, efficiency, and superior quality. Ideal for various applications, this product offers unmatched value, enhancing your system's speed and responsiveness. Upgrade your device today and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient stacking and arrangement of multiple DRAM modules in a system, maximizing space utilization.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the memory controller and the DRAM module, leading to faster and more reliable data transfers.

Self Refresh: YES

Self-refresh capability helps in reducing power consumption when the DRAM module is not actively being accessed, improving overall energy efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a nominal supply voltage of 1.2V strikes a balance between performance and power consumption, making the DRAM module energy-efficient.

No. of Terminals: 288

Having 288 terminals allows for a high level of connectivity and data transfer between the DRAM module and other system components, enhancing overall performance.

Maximum Clock Frequency (fCLK): 1612 MHz

The high maximum clock frequency enables the DRAM module to process data at a faster rate, leading to improved system responsiveness and multitasking capabilities.

Memory Density: 137438953472 bit

With a high memory density of 137438953472 bits, this DRAM module offers ample storage capacity for handling large amounts of data and running memory-intensive applications.

Technical Specifications

DRAM MTA16ATF2G64AZ-3G2J1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

1612 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

31.4 mm

Self Refresh:

YES

Sequential Burst Length:

8

Minimum Standby Voltage:

1.14 V

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

MTA16ATF2G64AZ-3G2J1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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