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IS43QR16512A-083TBL

Integrated Silicon Solution

IS43QR16512A-083TBL by Integrated Silicon Solution

IS43QR16512A-083TBL by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in compact electronic devices.

Median Price

$19.445

Lifecycle Status

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4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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$18.731

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Vyrian

USA . 8,326 parts In-Stock

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NAC Semi

USA . 294 parts In-Stock

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$20.160

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Flip Electronics

USA . 224 parts In-Stock

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AZTECH Wire

Italy . 246 parts In-Stock

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$18.025

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Aranea Global

USA . 1,000 parts In-Stock

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$18.356

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$17.622

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Authorized Procurement Solutions

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Eastek

USA . 294 parts In-Stock

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$19.140

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GreenTree Electronics

Israel . 294 parts In-Stock

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Overview

Unlock the power of high-quality DDR DRAM technology with the IS43QR16512A-083TBL by Integrated Silicon Solution. Designed for optimal performance and reliability, this memory module offers seamless integration in a variety of applications. With a nominal supply voltage of 1.2V and a maximum clock frequency of 1200 MHz, this memory module delivers fast and efficient data processing. Whether you're upgrading your personal computer or enhancing the capabilities of an industrial system, the IS43QR16512A-083TBL provides value, benefits, and advantages that will exceed your expectations. Experience superior quality and performance with Integrated Silicon Solution's cutting-edge memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving design in compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape offers efficient space utilization and easy integration into existing circuit designs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and data transfer, improving overall system performance.

Self Refresh: YES

The self-refresh capability reduces power consumption and extends battery life in mobile devices.

Input/Output Type: COMMON

Common input/output type simplifies system integration and compatibility with other components.

Nominal Supply Voltage / Vsup (V): 1.2

The 1.2V supply voltage offers energy efficiency and compatibility with modern power standards.

No. of Terminals: 96

With 96 terminals, this product provides reliable connectivity and signal transmission for high-speed data processing.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch design enhance signal integrity and reduce signal interference in complex circuit layouts.

Maximum Operating Temperature: 95 °C

The high maximum operating temperature ensures reliable performance in various environmental conditions.

Organization: 512MX16

The 512MX16 organization provides high memory capacity and data transfer efficiency for demanding applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple output configurations, enhancing flexibility in data processing.

Minimum Operating Temperature: 0 °C

With a low minimum operating temperature, this product is suitable for use in both indoor and outdoor settings.

Terminal Position: BOTTOM

The bottom terminal position allows for easy installation and secure connection with other components in the circuit.

Maximum Seated Height: 1.2 mm

The low maximum seated height saves space and enables compact device designs.

Maximum Clock Frequency (fCLK): 1200 MHz

With a high clock frequency, this product delivers fast data processing speeds and real-time performance.

Width: 10 mm

The 10mm width accommodates space constraints without compromising performance or functionality.

Minimum Supply Voltage (Vsup): 1.14 V

The 1.14V supply voltage ensures consistent power delivery for reliable operation in demanding applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure solder connections and long-term durability in reflow soldering processes.

Length: 14 mm

The 14mm length offers flexibility in PCB layout design and allows for compact electronic devices.

Access Mode: MULTI BANK PAGE BURST

The multi-bank page burst access mode enables efficient data access and retrieval for improved system performance.

Technology: CMOS

The CMOS technology provides low power consumption, high-speed processing, and reliable operation for modern electronic devices.

Terminal Form: BALL

The ball terminal form ensures secure connections and easy installation in surface mount applications.

Maximum Supply Current: 353 mA

The low maximum supply current reduces power consumption and extends battery life in portable devices.

No. of Words: 536870912 words

With a high number of words, this product offers ample storage capacity for large data sets and memory-intensive applications.

Sequential Burst Length: 4,8

The sequential burst length of 4,8 enhances data transfer efficiency and improves system performance during continuous read/write operations.

Memory Width: 16

The 16-bit memory width facilitates fast data transfer and processing for high-performance computing applications.

Terminal Pitch: 0.8 mm

The 0.8mm terminal pitch allows for tight integration and precise alignment on the PCB for reliable connectivity.

No. of Words Code: 512M

The 512M words code provides a standardized memory capacity for compatibility with various system configurations and applications.

Maximum Supply Voltage (Vsup): 1.26 V

The 1.26V maximum supply voltage ensures safe operation and protects the product from overvoltage conditions.

Memory Density: 8589934592 bit

The high memory density of 8589934592 bits offers ample storage capacity for data-intensive applications.

Memory IC Type: DDR DRAM

The DDR DRAM memory IC type provides high-speed data transfer rates and efficient memory access for improved system performance.

Maximum Standby Current: 0.025 Amp

The low maximum standby current minimizes power consumption during idle periods, prolonging battery life in mobile devices.

Interleaved Burst Length: 4,8

The interleaved burst length of 4,8 optimizes data access and retrieval speeds for enhanced system performance.

Technical Specifications

DRAM IS43QR16512A-083TBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.025 Amp

Maximum Supply Current:

353 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

IS43QR16512A-083TBL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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