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Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.

Transient Suppression Devices

Available Parts 2,400+

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMF36A-HE3-08 by Vishay Intertechnology

SMF36A-HE3-08

Vishay Intertechnology

Vishay Intertechnology's SMF36A-HE3-08 is a single unidirectional transient suppression diode with a max power dissipation of 1000W. With a breakdown voltage of 42.15V, it offers protection against voltage spikes in applications such as automotive electronics and industrial equipment. Operating temperature ranges from -55 to 150°C, making it suitable for harsh environments.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

44.3 V

40 V

42.15 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

36 V

.1 uA

36 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF36A-HM3-18 by Vishay Intertechnology

SMF36A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF36A-HM3-18 is a single avalanche diode with 1000W power dissipation, 42.15V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

44.3 V

40 V

42.15 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

36 V

.1 uA

36 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF40A-E3-18 by Vishay Intertechnology

SMF40A-E3-18

Vishay Intertechnology

Vishay Intertechnology's SMF40A-E3-18 is a unidirectional avalanche diode with 1000W peak power dissipation, ideal for transient suppression in electronic circuits. Featuring a breakdown voltage of 46.75V and max clamping voltage of 64.5V, it operates b/w -55°C to 150°C temperatures. This surface-mount device conforms to IEC-61000-4-5 standards, making it suitable for surge protection applications.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

49.1 V

44.4 V

46.75 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-5

40 V

.1 uA

40 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF40A-HE3-08 by Vishay Intertechnology

SMF40A-HE3-08

Vishay Intertechnology

Vishay Intertechnology's SMF40A-HE3-08 is a unidirectional avalanche diode with 1000W peak power dissipation, 46.75V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its compact small outline package and high clamping voltage of 64.5V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

49.1 V

44.4 V

46.75 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

40 V

.1 uA

40 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF40A-HM3-18 by Vishay Intertechnology

SMF40A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF40A-HM3-18 is a unidirectional Trans Voltage Suppressor Diode with 1000W peak power dissipation, 46.75V breakdown voltage, and 0.1uA max reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its AEC-Q101 compliance and high clamping voltage of 64.5V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

49.1 V

44.4 V

46.75 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

40 V

.1 uA

40 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF58A-HM3-08 by Vishay Intertechnology

SMF58A-HM3-08

Vishay Intertechnology

Vishay Intertechnology's SMF58A-HM3-08 is a unidirectional Trans Voltage Suppressor Diode with 1000W peak power dissipation, 67.6V breakdown voltage, and 95V max clamping voltage. Ideal for transient suppression in automotive electronics, adhering to AEC-Q101 and IEC-61000-4-5 standards.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

70.8 V

64.4 V

67.6 V

95 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

58 V

.1 uA

58 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF58A-HM3-18 by Vishay Intertechnology

SMF58A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF58A-HM3-18 is a single avalanche diode with 1000W power dissipation, 67.6V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, adhering to AEC-Q101 and IEC-61000-4-5 standards. Operates b/w -55°C to 150°C with a max clamping voltage of 95V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

70.8 V

64.4 V

67.6 V

95 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

58 V

.1 uA

58 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF5V0A-HE3-18 by Vishay Intertechnology

SMF5V0A-HE3-18

Vishay Intertechnology

Vishay Intertechnology's SMF5V0A-HE3-18 is a single avalanche diode with 1000W peak power dissipation, 6.75V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in automotive electronics, telecommunications equipment, and industrial applications due to its compact rectangular package and unidirectional polarity.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

7.1 V

6.4 V

6.75 V

9.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

5 V

5 uA

5 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

ESD207B102ELSE6327XTSA1 by Infineon Technologies

ESD207B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD207B102ELSE6327XTSA1 is a single bidirectional transient voltage suppressor diode with 3.3V max repetitive peak reverse voltage and avalanche technology. It operates b/w -40°C to 125°C, ideal for protecting electronic components in various applications requiring robust ESD protection.

3.65 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD0P8RFLE6327XTSA1 by Infineon Technologies

ESD0P8RFLE6327XTSA1

Infineon Technologies

Infineon Technologies' ESD0P8RFLE6327XTSA1 is a Transient Suppression Device with separate configuration and 2 elements. It is surface mountable and has a rectangular package shape. With a max breakdown voltage of 15V, it is commonly used as a trans voltage suppressor diode in various applications.

15 V

12 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N4

e4

1

2

4

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

50 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD1P0RFSH6327XTSA1 by Infineon Technologies

ESD1P0RFSH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

15 V

12 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

4

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

70 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD1P0RFWH6327XTSA1 by Infineon Technologies

ESD1P0RFWH6327XTSA1

Infineon Technologies

ESD1P0RFWH6327XTSA1 by Infineon: Transient Suppressor Diode with 70V Breakdown Voltage, 12V Clamping Voltage, and Avalanche Technology. Ideal for protecting sensitive electronics from voltage spikes in applications like consumer electronics and industrial equipment.

ULTRA LOW CAPACITANCE

15 V

12 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

70 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

ESD5V0S1U03WE6327HTSA1 by Infineon Technologies

ESD5V0S1U03WE6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

8 V

5.5 V

6.7 V

11 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

600 W

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

5 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD5V0S2U06E6327HTSA1 by Infineon Technologies

ESD5V0S2U06E6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

8 V

5.5 V

6.7 V

11 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

600 W

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

5 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD5V0S5USH6327XTSA1 by Infineon Technologies

ESD5V0S5USH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

7.7 V

5.7 V

6.7 V

9.3 V

COMMON ANODE, 5 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

130 W

5

6

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD5V3L1U02LRHE6327XTSA1 by Infineon Technologies

ESD5V3L1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3S1B02LRHE6327XTSA1 by Infineon Technologies

ESD5V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

11 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

80 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3U4RRSH6327XTSA1 by Infineon Technologies

ESD5V3U4RRSH6327XTSA1

Infineon Technologies

ESD5V3U4RRSH6327XTSA1 by Infineon is a single avalanche diode with 6.3V breakdown voltage and 50W peak power dissipation. It is used for transient suppression in electronics, offering unidirectional protection with a max clamping voltage of 15V. Ideal for surface mount applications, it operates b/w -55°C to 125°C temperature range.

6.3 V

6.3 V

15 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

50 W

1

6

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

6 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

ESD8V0R1B02LRHE6327XTSA1 by Infineon Technologies

ESD8V0R1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

14 V

8.5 V

17 V

23 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0R1B02LSE6327XTSA1 by Infineon Technologies

ESD8V0R1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

14 V

8.5 V

17 V

23 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P2RF02LRHE6327XTSA1 by Infineon Technologies

ESD0P2RF02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P2RF02LSE6327XTSA1 by Infineon Technologies

ESD0P2RF02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P4RFLE6327XTSA1 by Infineon Technologies

ESD0P4RFLE6327XTSA1

Infineon Technologies

ESD0P4RFLE6327XTSA1 by Infineon Tech: 2-element TRANS VOLTAGE SUPPRESSOR DIODE with 50V max reverse voltage, 6V clamping voltage. AVALANCHE tech for transient suppression in electronics, temp range -55 to 150 °C. Ideal for surface mount applications needing reliable ESD protection.

9 V

6 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N4

e4

1

2

4

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

50 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD102U2099ELE6327XTSA1 by Infineon Technologies

ESD102U2099ELE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBCC-N4

2

4

125 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD102U405LE6327XTSA1 by Infineon Technologies

ESD102U405LE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

7.4 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N5

e4

1

750 W

4

5

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD110B102ELSE6327XTSA1 by Infineon Technologies

ESD110B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD110B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 18.5V max repetitive peak reverse voltage and 44V clamping voltage. It operates b/w -40 to 125 °C, making it ideal for transient suppression in electronic devices. The chip carrier package with gold finish and bidirectional polarity enhances its performance in protecting against voltage spikes.

ULTRA LOW CAPACITANCE

29 V

44 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

58 W

1

2

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

18.5 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD18VU1B02LSE6327XTSA1 by Infineon Technologies

ESD18VU1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

18.5 V

YES

AVALANCHE

NO LEAD

BOTTOM

ESD205B102ELSE6327XTSA1 by Infineon Technologies

ESD205B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD205B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 8V breakdown voltage and 30W peak power dissipation. Ideal for transient suppression in applications requiring bidirectional protection, such as consumer electronics and industrial equipment.

LOW CAPACITANCE

8 V

8.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

30 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD206B102ELSE6327XTSA1 by Infineon Technologies

ESD206B102ELSE6327XTSA1

Infineon Technologies

ESD206B102ELSE6327XTSA1 by Infineon is a SINGLE TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, AVALANCHE technology, and bidirectional polarity. It is used for transient suppression in applications requiring protection against voltage spikes in the range of -55 to 125°C.

10 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD3V3S1B02LRHE6327XTSA1 by Infineon Technologies

ESD3V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

ESD3V3U4ULCE6327XTSA1 by Infineon Technologies

ESD3V3U4ULCE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 9; Surface Mount: YES; Package Shape: RECTANGULAR;

11 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N9

e4

1

4

9

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

3.3 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD3V3XU1USE6327XTSA1 by Infineon Technologies

ESD3V3XU1USE6327XTSA1

Infineon Technologies

ESD3V3XU1USE6327XTSA1 by Infineon is a unidirectional Trans Voltage Suppressor Diode with 3.3V peak reverse voltage, operating from -40 to 125°C. It uses avalanche technology in a chip carrier package for surface mount applications, providing transient suppression in electronic circuits.

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3S1B02LSE6327XTSA1 by Infineon Technologies

ESD5V3S1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V5S1B02LRHE6327XTSA1 by Infineon Technologies

ESD5V5S1B02LRHE6327XTSA1

Infineon Technologies

Infineon's ESD5V5S1B02LRHE6327XTSA1 is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, ideal for transient suppression. With 150W power dissipation and -55 to 125 °C operating range, it's suitable for protecting sensitive electronics in various applications.

10 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

150 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.5 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0L2B03LE6327XTMA1 by Infineon Technologies

ESD8V0L2B03LE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

8.5 V

8.5 V

26 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N3

e4

1

2

3

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD112B102ELSE6327XTSA1 by Infineon Technologies

ESD112B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD112B102ELSE6327XTSA1 is a single bidirectional Trans Voltage Suppressor Diode with 7V breakdown voltage, ideal for transient suppression. With avalanche technology and silicon diode element, it operates b/w -55°C to 125°C. This chip carrier package has gold terminal finish and is surface mountable.

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

AK10-530C by Littelfuse

AK10-530C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Polarity: BIDIRECTIONAL;

619 V

560 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

e4

3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

260

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

530 V

NO

AVALANCHE

GOLD

THROUGH-HOLE

10

LCE85-B by Littelfuse

LCE85-B

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW CAPACITANCE

10.5 V

9.34 V

9.92 V

ISOLATED

14.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-201AD

O-PALF-W2

e3

1500 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

Not Qualified

8.5 V

Transient Suppressors

NO

AVALANCHE

Matte Tin (Sn)

WIRE

AXIAL

40

SP3012-03UTG by Littelfuse

SP3012-03UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

MO-229

R-PDSO-N6

e3

1

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

5 V

YES

AVALANCHE

MATTE TIN

NO LEAD

DUAL

SP3012-04HTG by Littelfuse

SP3012-04HTG

Littelfuse

SP3012-04HTG by Littelfuse is a single avalanche diode with 6 terminals, matte tin finish, and unidirectional polarity. It operates b/w -40 to 125 °C and meets IEC standards for transient suppression. Ideal for protecting electronic circuits from voltage spikes in various applications.

ULTRA LOW CAPACITANCE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

MO-178AB

R-PDSO-G6

e3

1

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

P6KE150AR0G by Taiwan Semiconductor

P6KE150AR0G

Taiwan Semiconductor

P6KE150AR0G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 143V Min Breakdown Voltage. It operates b/w -55 to 175 °C and has a Max Power Dissipation of 5W. Ideal for transient suppression in electronic circuits.

EXCELLENT CLAMPING CAPABILITY

158 V

143 V

ISOLATED

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

UL RECOGNIZED

128 V

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

P6KE400AR0G by Taiwan Semiconductor

P6KE400AR0G

Taiwan Semiconductor

P6KE400AR0G by Taiwan Semiconductor is a 600W unidirectional Trans Voltage Suppressor Diode with 380V min breakdown voltage. It operates b/w -55 to 175 °C and has a max power dissipation of 5W. Ideal for transient suppression in electronic circuits.

EXCELLENT CLAMPING CAPABILITY

420 V

380 V

ISOLATED

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

UL RECOGNIZED

342 V

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

SMBJ10AM4G by Taiwan Semiconductor

SMBJ10AM4G

Taiwan Semiconductor

SMBJ10AM4G by Taiwan Semiconductor is a single transient suppression device with 600W peak reverse power dissipation. It operates b/w -55°C to 150°C, making it suitable for protecting electronic circuits from voltage spikes in various applications. With a breakdown voltage of 12.3V and unidirectional polarity, this silicon diode is ideal for avalanche technology-based protection in compact outline packages.

EXCELLENT CLAMPING CAPABILITY

12.3 V

11.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

10 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMBJ130AM4G by Taiwan Semiconductor

SMBJ130AM4G

Taiwan Semiconductor

SMBJ130AM4G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with a breakdown voltage of 144-159V. It has a max power dissipation of 3W and can operate in temperatures ranging from -55 to 150°C. Ideal for transient suppression applications requiring high peak reverse power dissipation.

EXCELLENT CLAMPING CAPABILITY

159 V

144 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

130 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

CM1753-1004YT by Onsemi

CM1753-1004YT

Onsemi

CM1753-1004YT by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with AVALANCHE technology. It offers 52V clamping voltage in UNIDIRECTIONAL polarity. Ideal for transient suppression applications, this surface mount diode uses SILICON as the diode element material.

52 V

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

UNIDIRECTIONAL

Transient Suppressors

YES

AVALANCHE

PTVS15-058C-SH by Bourns

PTVS15-058C-SH

Bourns

Bourns PTVS15-058C-SH is a bidirectional Trans Voltage Suppressor Diode with 66V breakdown voltage, 10uA reverse current, and 110V clamping voltage. Ideal for transient suppression in electronics, it operates b/w -55°C to 125°C and complies with IEC-61000-4-5 & UL standards.

70 V

64 V

66 V

110 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-G2

e4

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

BIDIRECTIONAL

IEC-61000-4-5; UL RECOGNIZED

58 V

10 uA

58 V

YES

AVALANCHE

SILVER

GULL WING

DUAL

PTVS15-076C-SH by Bourns

PTVS15-076C-SH

Bourns

Bourns PTVS15-076C-SH is a single bidirectional transient suppression device with 76V reverse test voltage. It has a max clamping voltage of 150V and operates b/w -55°C to 125°C. Ideal for applications requiring protection against transient overvoltage events according to IEC-61000-4-5 and UL standards.

95 V

85 V

92 V

150 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-G2

e4

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

BIDIRECTIONAL

IEC-61000-4-5; UL RECOGNIZED

76 V

10 uA

76 V

YES

AVALANCHE

SILVER

GULL WING

DUAL

SMCJ100A-HRAT7 by Littelfuse

SMCJ100A-HRAT7

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY; HIGH RELIABILITY

123 V

111 V

117 V

162 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AB

R-PDSO-C2

1500 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

6.5 W

MIL-PRF-19500; MIL-STD-750; UL RECOGNIZED

100 V

1 uA

100 V

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED