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SMBJ130AM4G

Taiwan Semiconductor

SMBJ130AM4G by Taiwan Semiconductor

SMBJ130AM4G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with a breakdown voltage of 144-159V. It has a max power dissipation of 3W and can operate in temperatures ranging from -55 to 150°C. Ideal for transient suppression applications requiring high peak reverse power dissipation.

Median Price

$0.359

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.359

100+ parts

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1k+ parts

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10k+ parts

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300

$0.359

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Vyrian

USA . 8,391 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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8,391

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.359

100+ parts

-

1k+ parts

$0.342

10k+ parts

$0.334

100

$0.359

-

$0.342

$0.334

AZTECH Wire

Italy . 330 parts In-Stock

1+ parts

$15.642

100+ parts

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1k+ parts

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10k+ parts

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330

$15.642

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Overview

Enhance your electronics with the SMBJ130AM4G by Taiwan Semiconductor, a top-quality transient suppression device that guarantees protection against voltage spikes and surges. With a reputation for excellence in manufacturing, Taiwan Semiconductor delivers reliable products that meet industry standards. The SMBJ130AM4G is perfect for a wide range of applications, providing peace of mind and ensuring the longevity of your equipment. Experience the value and benefits of this product, knowing that you are investing in superior quality and protection for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes it lightweight and durable, perfect for a wide range of applications.

Config: SINGLE

The single configuration simplifies installation and reduces the chances of errors in the setup.

Surface Mount: YES

Being surface mountable saves space and allows for easy integration into various electronics designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation rating, this device can effectively handle transient surges and spikes, providing reliable protection.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in mounting options, making it suitable for different types of PCB layouts.

No. of Terminals: 2

The two-terminal design simplifies the connection process and ensures efficient functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates compact designs in electronic circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures stable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

The low operating temperature range allows for reliable operation in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance for long-term durability.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in installation and ensures proper connection for optimal performance.

Maximum Power Dissipation: 3 W

This high power dissipation capability ensures efficient heat dissipation and prevents overheating during operation.

Minimum Breakdown Voltage: 144 V

The minimum breakdown voltage of 144 V offers effective protection against overvoltage events, safeguarding sensitive components.

Maximum Time At Peak Reflow Temperature (s): 30

The short duration for peak reflow temperature ensures the device's reliability and prevents thermal damage during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for safe and effective soldering processes without compromising the device's performance.

Maximum Breakdown Voltage: 159 V

With a maximum breakdown voltage of 159 V, this device provides robust protection against voltage spikes, ensuring the safety of connected equipment.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type effectively suppresses voltage transients, safeguarding electronic circuits from damage.

Technology: AVALANCHE

The avalanche technology used in this device enhances its ability to handle high energy transient events efficiently.

Terminal Form: C BEND

The C bend terminal form offers secure solder connections and mechanical stability in various applications.

Maximum Repetitive Peak Reverse Voltage: 130 V

The high maximum repetitive peak reverse voltage rating ensures long-term reliability and protection against repeated surge events.

Polarity: UNIDIRECTIONAL

The unidirectional polarity simplifies installation and ensures effective suppression of transient voltage spikes in one direction.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high performance and durability for long-lasting protection.

Technical Specifications

Transient Suppression Devices SMBJ130AM4G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

159 V

Minimum Breakdown Voltage:

144 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Maximum Repetitive Peak Reverse Voltage:

130 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ130AM4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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