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CM1753-1004YT

Onsemi

CM1753-1004YT by Onsemi

CM1753-1004YT by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with AVALANCHE technology. It offers 52V clamping voltage in UNIDIRECTIONAL polarity. Ideal for transient suppression applications, this surface mount diode uses SILICON as the diode element material.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 57,000 parts In-Stock

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USA . 7,447 parts In-Stock

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Digiode

USA . 2,158 parts In-Stock

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Native Components

USA . 606 parts In-Stock

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$0.757

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Northwest PG Solutions

USA . 994 parts In-Stock

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$0.833

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994

$0.833

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AZTECH Wire

Italy . 540 parts In-Stock

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$18.560

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Kulean Microsystems

USA . 5,554 parts In-Stock

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SupplyDigital Components

Austria . 3,914 parts In-Stock

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TANS Electronics

Latvia . 3,093 parts In-Stock

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Corphita

USA . 1,592 parts In-Stock

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Problanco Electronics

Mexico . 567 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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UHIMA Technologies

Türkiye . 273 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic devices with the CM1753-1004YT by Onsemi, a top-tier manufacturer known for its superior quality and reliability. As a leading product in the transient suppression devices category, this surface mount diode offers unmatched protection against voltage spikes, ensuring the longevity and performance of your equipment. With a maximum clamping voltage of 52V and cutting-edge avalanche technology, this unidirectional diode made of high-quality silicon provides peace of mind for your circuits. Trust Onsemi to deliver innovative solutions that safeguard your investments and keep your electronics running smoothly.

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diodes ensures that sudden voltage spikes or surges are effectively mitigated, protecting sensitive electronic components.

Technology: AVALANCHE

The avalanche technology provides high surge capability and fast response times, enhancing the overall performance and reliability of the suppression device.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are diverted in one direction only, maintaining proper circuit operation and protection.

Maximum Clamping Voltage: 52 V

With a high maximum clamping voltage of 52 V, this device can effectively handle surges or transients within this range, safeguarding connected equipment.

Diode Element Material: SILICON

Silicon diodes are known for their reliability, efficiency, and stability, making them ideal for use in transient suppression devices for long-lasting protection.

Technical Specifications

Transient Suppression Devices CM1753-1004YT attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Clamping Voltage:

52 V

Diode Element Material:

SILICON

Polarity:

UNIDIRECTIONAL

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Trade Compliance

CM1753-1004YT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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