Loading...

CM1771-5006YL

Onsemi

CM1771-5006YL by Onsemi

CM1771-5006YL by Onsemi is a Transient Suppression Device with 2 COMMON ANODE elements. Features include Breakdown Voltage of 100V, Technology: AVALANCHE, and Diode Element Material: SILICON. Ideal for protecting circuits from voltage spikes in electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 73,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

73,000

-

-

-

-

Vyrian

USA . 11,947 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,947

-

-

-

-

Digiode

USA . 1,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,107

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 322 parts In-Stock

1+ parts

$17.220

100+ parts

-

1k+ parts

-

10k+ parts

-

322

$17.220

-

-

-

Native Components

USA . 961 parts In-Stock

1+ parts

$34.070

100+ parts

-

1k+ parts

-

10k+ parts

$32.707

961

$34.070

-

-

$32.707

Northwest PG Solutions

USA . 307 parts In-Stock

1+ parts

$37.477

100+ parts

-

1k+ parts

-

10k+ parts

-

307

$37.477

-

-

-

Problanco Electronics

Mexico . 7,183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,183

-

-

-

-

TANS Electronics

Latvia . 6,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,064

-

-

-

-

SupplyDigital Components

Austria . 2,925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,925

-

-

-

-

Kulean Microsystems

USA . 2,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,316

-

-

-

-

Corphita

USA . 1,294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,294

-

-

-

-

UHIMA Technologies

Türkiye . 386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

386

-

-

-

-

Corohmni

South Africa . 254 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

254

-

-

-

-

Overview

Looking for reliable transient suppression devices? Look no further than the CM1771-5006YL by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality products that are designed to protect your electronics from voltage spikes. Whether you're working on industrial machinery or consumer electronics, this common anode device with 2 elements offers unmatched performance and protection. Trust Onsemi to provide the value and peace of mind you need for all your electronic projects.

Feature Benefit Bullets

Config: COMMON ANODE, 2 ELEMENTS

Having 2 elements with a common anode configuration allows for efficient transient suppression in both directions, providing better protection for electronic circuits.

Surface Mount: YES

Being surface mountable makes it easier for integration onto PCBs, saving space and simplifying assembly processes.

Nominal Breakdown Voltage: 100 V

With a nominal breakdown voltage of 100 V, this device is effective in clamping voltage spikes to protect sensitive components within the specified range.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment on PCBs, facilitating efficient circuit design.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a trans voltage suppressor diode, this device is specifically designed to effectively suppress transient voltage spikes, ensuring reliable operation of the connected electronics.

Technology: AVALANCHE

Utilizing avalanche technology ensures fast response time and high surge protection capabilities, making it a reliable choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices CM1771-5006YL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

110 V

Minimum Breakdown Voltage:

90 V

Nominal Breakdown Voltage:

100 V

Case Connection:

ANODE

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-XUUC-N1

No. of Elements:

2

No. of Terminals:

1

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CM1771-5006YL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2