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DUAL Diodes & Rectifiers 1,541

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Maximum Limiting Voltage Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Nominal Reference Voltage Nominal Regulation Current (Ireg) Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SS16LSH by Taiwan Semiconductor

SS16LSH

Taiwan Semiconductor

SS16LSH by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 1A and max forward voltage of 0.7V. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F2

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

60 V

400 uA

YES

SCHOTTKY

FLAT

DUAL

ES2DA_HF by Diodes Incorporated

ES2DA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.92 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

5 uA

.025 us

200 V

YES

MATTE TIN

C BEND

DUAL

ES2GA_HF by Diodes Incorporated

ES2GA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

5 uA

.025 us

400 V

YES

MATTE TIN

C BEND

DUAL

ES2JA_HF by Diodes Incorporated

ES2JA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

5 uA

.035 us

600 V

YES

MATTE TIN

C BEND

DUAL

30

ES3D_HF by Diodes Incorporated

ES3D_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.92 V

R-PDSO-C2

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

10 uA

.025 us

200 V

YES

C BEND

DUAL

SS220LWH by Taiwan Semiconductor

SS220LWH

Taiwan Semiconductor

SS220LWH by Taiwan Semiconductor is a Schottky rectifier diode with 200V peak reverse voltage and 2A output current. Its small outline package makes it suitable for efficiency applications in a wide temperature range (-55 to 150°C). With a max forward voltage of 0.95V, it is ideal for surface mount configurations.

LOW POWER LOSS, FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-F2

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

10 uA

YES

SCHOTTKY

FLAT

DUAL

SDM1A40LP8-7 by Diodes Incorporated

SDM1A40LP8-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.59 V

R-PDSO-N2

e4

7 A

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

20 uA

.014 us

40 V

YES

SCHOTTKY

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

S2MHA_HF by Diodes Incorporated

S2MHA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

GENERAL PURPOSE

1000 V

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

1000 V

YES

MATTE TIN

C BEND

DUAL

FS1ME_HF by Diodes Incorporated

FS1ME_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-F2

e3

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

1.6 us

1000 V

YES

MATTE TIN

FLAT

DUAL

PMEG4005AEA-QF by Nexperia

PMEG4005AEA-QF

Nexperia

The Nexperia PMEG4005AEA-QF is a Schottky rectifier diode with a max output current of 0.5A and forward voltage of 0.47V. It operates b/w -65 to 150°C, has a reverse test voltage of 40V, and is ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.47 V

R-PDSO-G2

e3

1

10 A

1

1

2

150 Cel

-65 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101; IEC-60134

40 V

100 uA

40 V

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

PMEG4005AEA-QZ by Nexperia

PMEG4005AEA-QZ

Nexperia

The Nexperia PMEG4005AEA-QZ is a Schottky rectifier diode with a max forward voltage of 0.47V and output current of 0.5A. It has a reverse test voltage of 40V, making it suitable for efficiency applications in automotive electronics due to its AEC-Q101 and IEC-60134 standards compliance. The diode operates b/w -65°C to 150°C, with a peak reflow temperature of 260°C for up to 30 seconds.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.47 V

R-PDSO-G2

e3

1

10 A

1

1

2

150 Cel

-65 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101; IEC-60134

40 V

100 uA

40 V

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

1SS355-7 by Diodes Incorporated

1SS355-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST RECOVERY

80 V

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G2

e3

.5 A

1

1

2

150 Cel

.1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

90 V

.1 uA

.004 us

80 V

YES

MATTE TIN

GULL WING

DUAL

B240AX-13 by Diodes Incorporated

B240AX-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

FAST RECOVERY

40 V

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-C2

e3

35 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

MIL-STD-202

40 V

250 uA

40 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK56CV7G by Taiwan Semiconductor

SK56CV7G

Taiwan Semiconductor

SK56CV7G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 60V. It is designed for efficiency applications, operates b/w -55 to 150 °C, and features a small outline package style for surface mount usage.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SDM0440S3F-7 by Diodes Incorporated

SDM0440S3F-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

GENERAL PURPOSE

40 V

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F2

e3

2.5 A

1

1

2

150 Cel

-65 Cel

.4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.35 W

MIL-STD-202

40 V

20 uA

.0045 us

40 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

BAW56W-QF by Nexperia

BAW56W-QF

Nexperia

Nexperia's BAW56W-QF is a common anode diode with 2 elements, featuring a max reverse recovery time of 0.004 us and max reverse current of 150 uA. Ideal for rectification applications, it has a package style of small outline and can operate in temperatures ranging from -65 to 150 °C.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-G3

4 A

2

1

3

150 Cel

-65 Cel

.15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.2 W

AEC-Q101; IEC-60134

90 V

150 uA

.004 us

80 V

YES

GULL WING

DUAL

BAS16VY-QH by Nexperia

BAS16VY-QH

Nexperia

BAS16VY-QH by Nexperia is a rectifier diode with 3 separate elements, featuring max reverse recovery time of 0.004 us and max reverse current of 50 uA. Ideal for applications requiring a small outline package, it has a max operating temp of 150 °C and can handle a max output current of 0.2 A.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

SEPARATE, 3 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-G6

4 A

3

1

6

150 Cel

-65 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

AEC-Q101; IEC-60134

100 V

50 uA

.004 us

80 V

YES

GULL WING

DUAL

BAS16VY-QZ by Nexperia

BAS16VY-QZ

Nexperia

BAS16VY-QZ by Nexperia is a rectifier diode with 3 separate elements, offering a max reverse recovery time of 0.004 us and a max reverse current of 50 uA. With a package style of small outline and gull wing terminal form, it is ideal for applications requiring high-speed switching in automotive electronics.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

SEPARATE, 3 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-G6

4 A

3

1

6

150 Cel

-65 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

AEC-Q101; IEC-60134

100 V

50 uA

.004 us

80 V

YES

GULL WING

DUAL

BAW56S-QF by Nexperia

BAW56S-QF

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

2 BANKS, COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-G6

4 A

4

1

6

150 Cel

-65 Cel

.25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.35 W

AEC-Q101; IEC-60134

90 V

150 uA

.004 us

80 V

YES

GULL WING

DUAL

BAW56S-QX by Nexperia

BAW56S-QX

Nexperia

Nexperia's BAW56S-QX diode features 2 elements with common anode, 80V reverse test voltage, and 0.004us max reverse recovery time. Ideal for rectification applications in automotive electronics due to AEC-Q101 compliance and small outline package design.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

2 BANKS, COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-G6

4 A

4

1

6

150 Cel

-65 Cel

.25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.35 W

AEC-Q101; IEC-60134

90 V

150 uA

.004 us

80 V

YES

GULL WING

DUAL

CMG03A,LQ(M by Toshiba

CMG03A,LQ(M

Toshiba

Toshiba's CMG03A,LQ(M diode is a single-config, surface-mount rectifier with 600V reverse test voltage. It has a max output current of 2A and forward voltage of 1.1V, making it ideal for applications requiring high efficiency and low power loss in small outline packages.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-F2

80 A

1

1

2

150 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

600 V

5 uA

600 V

YES

FLAT

DUAL

BAV3004WSQ-7 by Diodes Incorporated

BAV3004WSQ-7

Diodes Incorporated

BAV3004WSQ-7 by Diodes Inc. is a single rectifier diode with a reverse test voltage of 240V and max forward voltage of 1.25V. It is designed for high voltage fast recovery applications, operates b/w -55 to 150°C, and has a small outline package style for surface mount usage.

LOW LEAKAGE CURRENT

HIGH VOLTAGE FAST RECOVERY

350 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-G2

e3

4 A

1

1

2

150 Cel

-55 Cel

.225 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

350 V

.1 uA

.05 us

240 V

YES

MATTE TIN

GULL WING

DUAL

NRVUA120VT3G-GA01 by Onsemi

NRVUA120VT3G-GA01

Onsemi

NRVUA120VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVUA160VT3G-GA01 by Onsemi

NRVUA160VT3G-GA01

Onsemi

NRVUA160VT3G-GA01 by Onsemi is a single diode with a reverse recovery time of 0.075 us and max reverse current of 5 uA. It is designed for high voltage ultra fast recovery power applications, with a max operating temperature of 175°C and min breakdown voltage of 600 V.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

NRVTSA4100ET3G-GA01 by Onsemi

NRVTSA4100ET3G-GA01

Onsemi

NRVTSA4100ET3G-GA01 by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward current of 4A. It operates b/w -55°C to 175°C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and complies with AEC-Q101 standards.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-C2

150 A

1

1

2

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

29 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVUA110VT3G-GA01 by Onsemi

NRVUA110VT3G-GA01

Onsemi

NRVUA110VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 100V and max reverse recovery time of 0.03us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.03 us

100 V

YES

C BEND

DUAL

NRVUS220VT3G-GA01 by Onsemi

NRVUS220VT3G-GA01

Onsemi

NRVUS220VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, making it suitable for various electronic devices.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVTSA4100T3G-GA01 by Onsemi

NRVTSA4100T3G-GA01

Onsemi

NRVTSA4100T3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 4A max output current, and 0.66V max forward voltage. Ideal for efficiency applications with AEC-Q101 standard compliance.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.66 V

R-PDSO-C2

50 A

1

1

2

150 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

25 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVTSS3100ET3G-GA01 by Onsemi

NRVTSS3100ET3G-GA01

Onsemi

NRVTSS3100ET3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 5uA max reverse current, and 3A max output current. Ideal for efficiency applications, it operates b/w -55 to 175 °C and meets AEC-Q101 standard.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.995 V

R-PDSO-C2

90 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

5 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVUA210VT3G-GA01 by Onsemi

NRVUA210VT3G-GA01

Onsemi

NRVUA210VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 100V and max reverse recovery time of 0.03us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.94 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.03 us

100 V

YES

C BEND

DUAL

NRVUHS160VT3G-GA01 by Onsemi

NRVUHS160VT3G-GA01

Onsemi

NRVUHS160VT3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.035us recovery time, and 20uA reverse current. Ideal for ultra-fast power applications with operating temperatures from -65 to 175 °C.

FREE WHEELING DIODE

ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

2.4 V

R-PDSO-C2

15 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

20 uA

.035 us

600 V

YES

C BEND

DUAL

SURA8205T3G-GA01 by Onsemi

SURA8205T3G-GA01

Onsemi

SURA8205T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.03 us and max output current of 2 A. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and operating temperature range from -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

50 V

SINGLE

SILICON

RECTIFIER DIODE

.94 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

50 V

2 uA

.03 us

50 V

YES

C BEND

DUAL

NRVUS240VT3G-GA01 by Onsemi

NRVUS240VT3G-GA01

Onsemi

NRVUS240VT3G-GA01 by Onsemi is a single rectifier diode with 400V reverse test voltage and 0.065us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

C BEND

DUAL

SURA8260T3G-GA01 by Onsemi

SURA8260T3G-GA01

Onsemi

SURA8260T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.075 us and a max reverse current of 5 uA. It is designed for high voltage ultra-fast recovery power applications, featuring a max operating temperature of 175 °C and a min breakdown voltage of 600 V.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

SURA8240T3G-GA01 by Onsemi

SURA8240T3G-GA01

Onsemi

SURA8240T3G-GA01 by Onsemi is a single diode with a reverse test voltage of 400V and max forward voltage of 1.3V. It has a fast recovery time of 0.065us, making it suitable for high voltage applications requiring up to 2A output current. The diode is designed for use in automotive electronics due to its AEC-Q101 reference standard compliance.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

C BEND

DUAL

NRVTSA3100ET3G-GA01 by Onsemi

NRVTSA3100ET3G-GA01

Onsemi

NRVTSA3100ET3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 3A max output current, and 0.995V max forward voltage. It is ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance and -55 to 175 °C operating temperature range.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.995 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

5 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

SURS8260T3G-GA01 by Onsemi

SURS8260T3G-GA01

Onsemi

SURS8260T3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.075us reverse recovery time, and 5uA reverse current. Ideal for high voltage ultra-fast power applications with max operating temp of 175 °C. Package style: small outline, surface mountable.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

SURA8215T3G-GA01 by Onsemi

SURA8215T3G-GA01

Onsemi

SURA8215T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and max reverse current of 2 uA. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and operating temperatures ranging from -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

150 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

150 V

2 uA

.035 us

150 V

YES

C BEND

DUAL

NRVUA220VT3G-GA01 by Onsemi

NRVUA220VT3G-GA01

Onsemi

NRVUA220VT3G-GA01 by Onsemi is a single diode with 0.035 us reverse recovery time, 2 uA reverse current, and 200 V reverse test voltage. Ideal for high voltage ultra fast recovery power applications. Operating temp range -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

SURA8130T3G-GA01 by Onsemi

SURA8130T3G-GA01

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

300 V

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

300 V

5 uA

.065 us

300 V

YES

C BEND

DUAL

NRVUA140VT3G-GA01 by Onsemi

NRVUA140VT3G-GA01

Onsemi

NRVUA140VT3G-GA01 by Onsemi is a single rectifier diode with 400V reverse test voltage and 0.065us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

C BEND

DUAL

SURS8320T3G-GA01 by Onsemi

SURS8320T3G-GA01

Onsemi

SURS8320T3G-GA01 by Onsemi is a single diode with 0.035us reverse recovery time, 5uA reverse current, and 200V reverse test voltage. It is used in high voltage ultra-fast recovery power applications due to its small outline package style and silicon diode element material.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.89 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

5 uA

.035 us

200 V

YES

C BEND

DUAL

SURS8340T3G-GA01 by Onsemi

SURS8340T3G-GA01

Onsemi

SURS8340T3G-GA01 by Onsemi is a single diode with 400V reverse test voltage, 0.075us reverse recovery time, and 10uA reverse current. Ideal for high voltage ultra-fast power applications with max output current of 4A and AEC-Q101 reference standard compliance.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.28 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

10 uA

.075 us

400 V

YES

C BEND

DUAL

SURS8360T3G-GA01 by Onsemi

SURS8360T3G-GA01

Onsemi

SURS8360T3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.075us reverse recovery time, and 10uA reverse current. Ideal for high voltage ultra-fast power applications, it operates b/w -65 to 175 °C with a max output current of 4A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.28 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

10 uA

.075 us

600 V

YES

C BEND

DUAL

NRVUS120VT3G-GA01 by Onsemi

NRVUS120VT3G-GA01

Onsemi

NRVUS120VT3G-GA01 by Onsemi is a single rectifier diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVUS160VT3G-GA01 by Onsemi

NRVUS160VT3G-GA01

Onsemi

NRVUS160VT3G-GA01 by Onsemi is a single diode with 600V reverse test voltage and 0.075us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

NRVUS110VT3G-GA01 by Onsemi

NRVUS110VT3G-GA01

Onsemi

NRVUS110VT3G-GA01 by Onsemi is a single diode with 100V reverse test voltage, 0.035us reverse recovery time, and 2uA reverse current. Ideal for high voltage ultra-fast power applications with AEC-Q101 standard compliance.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.035 us

100 V

YES

C BEND

DUAL

NRVUS360VBT3G-GA01 by Onsemi

NRVUS360VBT3G-GA01

Onsemi

NRVUS360VBT3G-GA01 by Onsemi is a single rectifier diode with a reverse test voltage of 600V and max reverse recovery time of 0.075us. It is designed for high voltage ultra-fast power applications, operating b/w -65 to 175 °C, with a max output current of 3A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

3 uA

.075 us

600 V

YES

C BEND

DUAL