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XOMAP3503BCUS

Texas Instruments

XOMAP3503BCUS by Texas Instruments

XOMAP3503BCUS by Texas Instruments is a DSP with 16-bit external data bus, 38.4 MHz clock frequency, and 423 terminals. It operates b/w 0-70°C and has low power mode for energy efficiency. Ideal for commercial applications requiring high-speed signal processing in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,557 parts In-Stock

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Vyrian

USA . 4,380 parts In-Stock

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4,380

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Holdelec - ElecDif-Pro

France . 6 parts In-Stock

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AZTECH Wire

Italy . 650 parts In-Stock

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$7.181

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650

$7.181

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One Stop Electronics

USA . 950 parts In-Stock

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$23.000

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$23.000

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Parana Technologies

USA . 1,792 parts In-Stock

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$42.360

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DigiPath Technology Company

USA . 1,570 parts In-Stock

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$46.643

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$42.912

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$46.643

$42.912

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ChromeModa Solutions

Germany . 2,108 parts In-Stock

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$47.595

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$39.028

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IDEA Electronic Components Group

UK . 1,126 parts In-Stock

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$47.595

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$45.215

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$42.836

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$42.836

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Corohmni

South Africa . 3,135 parts In-Stock

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$79.607

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Corphita

USA . 750 parts In-Stock

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750

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Microchip USA

USA . 275 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the XOMAP3503BCUS by Texas Instruments. This high-quality Digital Signal Processor boasts a package style that ensures optimal performance in a variety of applications. From digital audio processing to telecommunications, this versatile DSP offers customers unparalleled value and benefits. Trust in Texas Instruments' reputation for excellence and elevate your projects to the next level with the XOMAP3503BCUS.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, reducing manufacturing costs and making the product more compact.

Maximum Supply Voltage: 1.89 V

The high maximum supply voltage provides flexibility in power supply options, allowing the DSP to operate efficiently in various systems.

Internal Bus Architecture: MULTIPLE

Multiple internal bus architecture enables efficient data processing and communication within the DSP, improving overall performance and speed.

Maximum Clock Frequency: 38.4 MHz

High maximum clock frequency allows for fast signal processing and execution of complex algorithms, making the DSP suitable for demanding applications.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, MIXED

The mixed peripheral IC type indicates versatility in handling both digital signal processing tasks and other kinds of peripheral interactions, making the product suitable for a wide range of applications.

Technical Specifications

Digital Signal Processors (DSPs) XOMAP3503BCUS attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

26

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B423

Length:

16 mm

Low Power Mode:

YES

No. of Terminals:

423

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA423,24X24,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.1,1.8,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

16 mm

Peripheral IC Type:

Trade Compliance

XOMAP3503BCUS Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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