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TMS28F002AEB80BDBJE

Texas Instruments

TMS28F002AEB80BDBJE by Texas Instruments

TMS28F002AEB80BDBJE by Texas Instruments is a 256Kx8 NOR flash memory with 3-STATE output. Operating at 3V, it offers industrial-grade temperature range and supports asynchronous mode. Ideal for applications requiring fast access times and high endurance, such as embedded systems and industrial control units.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,483 parts In-Stock

1+ parts

-

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4,483

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Digiode

USA . 1,986 parts In-Stock

1+ parts

-

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-

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1,986

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 103 parts In-Stock

1+ parts

$2.213

100+ parts

$205.468

1k+ parts

$1.991

10k+ parts

-

103

$2.213

$205.468

$1.991

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DigiPath Technology Company

USA . 870 parts In-Stock

1+ parts

$2.436

100+ parts

-

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870

$2.436

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ChromeModa Solutions

Germany . 2,412 parts In-Stock

1+ parts

$2.486

100+ parts

$2.039

1k+ parts

-

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2,412

$2.486

$2.039

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IDEA Electronic Components Group

UK . 1,766 parts In-Stock

1+ parts

$2.486

100+ parts

-

1k+ parts

$2.237

10k+ parts

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1,766

$2.486

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$2.237

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One Stop Electronics

USA . 768 parts In-Stock

1+ parts

$3.000

100+ parts

-

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768

$3.000

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AZTECH Wire

Italy . 732 parts In-Stock

1+ parts

$18.256

100+ parts

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732

$18.256

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Corphita

USA . 1,880 parts In-Stock

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1,880

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Overview

Experience the unrivaled quality and reliability of Texas Instruments with the TMS28F002AEB80BDBJE Flash Memory. This versatile product offers endless possibilities in various industrial applications, providing fast access times and 10000 Write/Erase cycles for enhanced performance. With a nominal supply voltage of 3V and a compact package style, this flash memory is a valuable addition to any project, offering high endurance and efficiency. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material helps in making the product lightweight and durable.

No. of Terminals: 44

Having 44 terminals allows for efficient connectivity and communication within the device.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions.

Endurance: 10000 Write/Erase Cycles

The high endurance rating ensures that the product can be used for a long time without wearing out.

Memory Density: 2097152 bit

The high memory density allows for storing a large amount of data efficiently.

Technical Specifications

Flash Memory TMS28F002AEB80BDBJE attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

Length:

28.2 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.63 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

13.3 mm

Trade Compliance

TMS28F002AEB80BDBJE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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