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TMS28F002AEB70BDBJL

Texas Instruments

TMS28F002AEB70BDBJL by Texas Instruments

TMS28F002AEB70BDBJL by Texas Instruments is a 256Kx8 NOR flash memory with 3V nominal voltage. Operating in asynchronous mode, it offers 10000 write/erase cycles and has a max access time of 70ns. Ideal for applications requiring fast, non-volatile memory storage in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,735 parts In-Stock

1+ parts

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2,735

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Digiode

USA . 533 parts In-Stock

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533

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,242 parts In-Stock

1+ parts

$3.569

100+ parts

-

1k+ parts

$4.091

10k+ parts

-

2,242

$3.569

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$4.091

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ChromeModa Solutions

Germany . 2,611 parts In-Stock

1+ parts

$4.010

100+ parts

$3.288

1k+ parts

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2,611

$4.010

$3.288

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IDEA Electronic Components Group

UK . 1,378 parts In-Stock

1+ parts

$4.010

100+ parts

-

1k+ parts

$3.609

10k+ parts

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1,378

$4.010

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$3.609

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AZTECH Wire

Italy . 886 parts In-Stock

1+ parts

$5.500

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886

$5.500

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One Stop Electronics

USA . 661 parts In-Stock

1+ parts

$9.000

100+ parts

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661

$9.000

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Corphita

USA . 4,260 parts In-Stock

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4,260

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DigiPath Technology Company

USA . 912 parts In-Stock

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$3.615

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912

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$3.615

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Overview

Unlock the power of reliable and high-quality flash memory with the TMS28F002AEB70BDBJL by Texas Instruments. With a reputation for excellence in technology, Texas Instruments delivers a robust solution for your storage needs. This versatile product offers a wide range of applications in various industries, providing customers with a valuable and efficient storage solution. Trust in Texas Instruments to provide you with the best quality products that offer unmatched performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ensuring the product is easy to handle and resistant to damage during use.

Surface Mount: YES

The surface mount feature allows for easy installation on circuit boards, making it convenient for manufacturers to integrate this flash memory into their devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operations and efficient performance, enhancing the speed and reliability of data storage and retrieval.

Power Supplies (V): 3/5

The dual power supply options of 3V and 5V provide flexibility in compatibility with different systems, making this flash memory suitable for a variety of devices.

No. of Terminals: 44

With 44 terminals, this flash memory offers multiple connection points for efficient data transfer, ensuring a stable and reliable connection in the system.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows for reliable performance in various environmental conditions, making this flash memory suitable for a range of applications.

Organization: 256KX8

The 256KX8 organization provides a large storage capacity and efficient data organization, allowing for smooth data processing and management in the device.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple output states, enabling efficient data transmission and processing, enhancing the performance and versatility of this flash memory.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in low-temperature environments, making this flash memory suitable for a wide range of operating conditions.

Technology: MOS

The MOS technology used in this flash memory offers high-speed operation and low power consumption, making it an efficient and reliable choice for data storage in electronic devices.

Technical Specifications

Flash Memory TMS28F002AEB70BDBJL attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

Length:

28.2 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.63 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

13.3 mm

Trade Compliance

TMS28F002AEB70BDBJL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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