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TMS28F002AEB70CDCDL

Texas Instruments

TMS28F002AEB70CDCDL by Texas Instruments

TMS28F002AEB70CDCDL by Texas Instruments is a 256Kx8 NOR Flash Memory with 3V nominal voltage. Operating in asynchronous mode, it offers 100000 Write/Erase cycles endurance and has a max access time of 130ns. Ideal for applications requiring fast data access and reliable storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,495

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-

-

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Digiode

USA . 763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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763

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 574 parts In-Stock

1+ parts

$5.234

100+ parts

$486.065

1k+ parts

$4.711

10k+ parts

-

574

$5.234

$486.065

$4.711

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DigiPath Technology Company

USA . 1,653 parts In-Stock

1+ parts

$5.763

100+ parts

$5.302

1k+ parts

-

10k+ parts

-

1,653

$5.763

$5.302

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IDEA Electronic Components Group

UK . 1,769 parts In-Stock

1+ parts

$5.881

100+ parts

-

1k+ parts

$5.293

10k+ parts

-

1,769

$5.881

-

$5.293

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ChromeModa Solutions

Germany . 430 parts In-Stock

1+ parts

$5.881

100+ parts

$4.822

1k+ parts

-

10k+ parts

-

430

$5.881

$4.822

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AZTECH Wire

Italy . 849 parts In-Stock

1+ parts

$7.145

100+ parts

-

1k+ parts

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10k+ parts

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849

$7.145

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One Stop Electronics

USA . 1,015 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

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10k+ parts

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1,015

$10.000

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Corphita

USA . 4,709 parts In-Stock

1+ parts

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100+ parts

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4,709

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Overview

Unlock the power of reliable and high-quality flash memory with the TMS28F002AEB70CDCDL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and durability in their products. This versatile flash memory device is perfect for a wide range of applications, offering customers value, speed, and efficiency. With its 100,000 write/erase cycles endurance and fast access time of 130 ns, this product provides seamless operation and peace of mind. Upgrade your system with the TMS28F002AEB70CDCDL and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the flash memory lightweight and durable, ideal for portable electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent read and write operations, enhancing flexibility and efficiency.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this flash memory energy-efficient and compatible with a wide range of devices.

Organization: 256KX8

With an organization of 256KX8, this flash memory offers a high storage capacity and fast data access for efficient performance.

Endurance: 100000 Write/Erase Cycles

The flash memory's high endurance of 100,000 write/erase cycles ensures reliable and long-lasting data storage.

Technical Specifications

Flash Memory TMS28F002AEB70CDCDL attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

130 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

TMS28F002AEB70CDCDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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