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TMS28F002AEB80BDCDL

Texas Instruments

TMS28F002AEB80BDCDL by Texas Instruments

TMS28F002AEB80BDCDL by Texas Instruments is a 256Kx8 NOR Flash Memory with 3V nominal voltage. Operating in asynchronous mode, it offers 10000 write/erase cycles and has a max access time of 150ns. Ideal for commercial applications requiring fast, reliable memory storage in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,312 parts In-Stock

1+ parts

-

100+ parts

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4,312

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Digiode

USA . 146 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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146

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 863 parts In-Stock

1+ parts

$4.051

100+ parts

-

1k+ parts

$4.514

10k+ parts

-

863

$4.051

-

$4.514

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IDEA Electronic Components Group

UK . 1,703 parts In-Stock

1+ parts

$4.552

100+ parts

-

1k+ parts

$4.097

10k+ parts

-

1,703

$4.552

-

$4.097

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ChromeModa Solutions

Germany . 1,374 parts In-Stock

1+ parts

$4.552

100+ parts

$3.733

1k+ parts

-

10k+ parts

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1,374

$4.552

$3.733

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One Stop Electronics

USA . 1,446 parts In-Stock

1+ parts

$6.000

100+ parts

-

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10k+ parts

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1,446

$6.000

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AZTECH Wire

Italy . 464 parts In-Stock

1+ parts

$14.952

100+ parts

-

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10k+ parts

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464

$14.952

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DigiPath Technology Company

USA . 434 parts In-Stock

1+ parts

-

100+ parts

$4.104

1k+ parts

-

10k+ parts

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434

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$4.104

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Corphita

USA . 252 parts In-Stock

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252

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Overview

Unlock the power of reliable and high-quality flash memory with the TMS28F002AEB80BDCDL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products for a wide range of applications. With its small outline, thin profile package and asynchronous operating mode, this flash memory offers exceptional value to customers seeking dependable storage solutions. Whether you're in need of fast access times, low standby current, or versatile command user interface, this product has you covered. Trust Texas Instruments to provide you with the cutting-edge technology you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for use in various environments.

Surface Mount: YES

Easy to install and saves space on the PCB.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage, compatible with many systems.

No. of Terminals: 40

Sufficient terminals for connectivity and communication with other components.

Maximum Operating Temperature: 70 °C

Can function reliably within a wide range of temperatures.

Organization: 256KX8

Provides a good balance between storage capacity and data access speed.

Technical Specifications

Flash Memory TMS28F002AEB80BDCDL attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

TMS28F002AEB80BDCDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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