Loading...

TMS28F002AEB70BDCDE

Texas Instruments

TMS28F002AEB70BDCDE by Texas Instruments

TMS28F002AEB70BDCDE by Texas Instruments is a 256Kx8 NOR Flash Memory with 3V nominal voltage. Operating in industrial temperature range, it offers 10000 write/erase cycles and has a max access time of 130ns. Ideal for applications requiring high endurance and fast access speeds.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,296 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,296

-

-

-

-

Digiode

USA . 4,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,720

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,122 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,122

$2.000

-

-

-

Parana Technologies

USA . 1,995 parts In-Stock

1+ parts

$3.947

100+ parts

-

1k+ parts

$4.419

10k+ parts

-

1,995

$3.947

-

$4.419

-

ChromeModa Solutions

Germany . 6,180 parts In-Stock

1+ parts

$4.435

100+ parts

$3.637

1k+ parts

-

10k+ parts

-

6,180

$4.435

$3.637

-

-

IDEA Electronic Components Group

UK . 1,934 parts In-Stock

1+ parts

$4.435

100+ parts

-

1k+ parts

$3.992

10k+ parts

-

1,934

$4.435

-

$3.992

-

AZTECH Wire

Italy . 385 parts In-Stock

1+ parts

$10.200

100+ parts

-

1k+ parts

-

10k+ parts

-

385

$10.200

-

-

-

Corphita

USA . 1,502 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,502

-

-

-

-

DigiPath Technology Company

USA . 41 parts In-Stock

1+ parts

-

100+ parts

$3.999

1k+ parts

-

10k+ parts

-

41

-

$3.999

-

-

Overview

Unlock the power of reliable data storage with the TMS28F002AEB70BDCDE by Texas Instruments. As a leader in semiconductor technology, Texas Instruments delivers top-notch quality and performance. This flash memory device is perfect for a wide range of applications, offering customers a seamless experience with its high endurance and fast access time. Trust Texas Instruments to provide you with a cutting-edge solution that meets all your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the flash memory, making it suitable for a variety of environments.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures compatibility with a wide range of devices and power sources.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for efficient data transfer and processing, enhancing the performance of the flash memory.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand heat and function reliably in various conditions.

Endurance: 10000 Write/Erase Cycles

The high endurance of 10000 write/erase cycles ensures longevity and reliability, making this flash memory a durable storage solution.

Technical Specifications

Flash Memory TMS28F002AEB70BDCDE attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

130 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

TMS28F002AEB70BDCDE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19