Loading...

TMS28F002AEB70CDCDE

Texas Instruments

TMS28F002AEB70CDCDE by Texas Instruments

TMS28F002AEB70CDCDE by Texas Instruments is a 256Kx8 NOR flash memory with 3V nominal voltage. Operating in asynchronous mode, it offers 100000 write/erase cycles and has a max access time of 130ns. Ideal for industrial applications requiring fast, reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,227 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,227

-

-

-

-

Digiode

USA . 1,725 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,725

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 226 parts In-Stock

1+ parts

$3.194

100+ parts

-

1k+ parts

$3.717

10k+ parts

-

226

$3.194

-

$3.717

-

DigiPath Technology Company

USA . 1,662 parts In-Stock

1+ parts

$3.517

100+ parts

$3.236

1k+ parts

-

10k+ parts

-

1,662

$3.517

$3.236

-

-

ChromeModa Solutions

Germany . 1,710 parts In-Stock

1+ parts

$3.589

100+ parts

$2.943

1k+ parts

-

10k+ parts

-

1,710

$3.589

$2.943

-

-

IDEA Electronic Components Group

UK . 943 parts In-Stock

1+ parts

$3.589

100+ parts

-

1k+ parts

$3.230

10k+ parts

-

943

$3.589

-

$3.230

-

AZTECH Wire

Italy . 557 parts In-Stock

1+ parts

$10.834

100+ parts

-

1k+ parts

-

10k+ parts

-

557

$10.834

-

-

-

One Stop Electronics

USA . 1,630 parts In-Stock

1+ parts

$25.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,630

$25.000

-

-

-

Corphita

USA . 420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

420

-

-

-

-

Overview

Experience the superior quality and reliability of Texas Instruments with the TMS28F002AEB70CDCDE Flash Memory. Perfect for a wide range of applications, this product offers customers unmatched value and benefits. With a compact package style, low power consumption, and high endurance, this memory device provides seamless performance and efficiency. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a lightweight and durable construction for the product.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of memory cells, improving overall data access speed and efficiency.

Nominal Supply Voltage / Vsup (V): 3

Having a nominal supply voltage of 3V makes the product compatible with a wide range of devices and power sources.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliability and performance in demanding industrial environments.

Memory Width: 8

With a memory width of 8, the product is capable of processing data in parallel, leading to faster read and write speeds.

Endurance: 100000 Write/Erase Cycles

The high endurance rating of 100,000 write/erase cycles ensures long-lasting performance and reliability for the product.

Maximum Access Time: 130 ns

The low maximum access time of 130 nanoseconds allows for quick data retrieval and efficient operation of the product.

Technical Specifications

Flash Memory TMS28F002AEB70CDCDE attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

130 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

TMS28F002AEB70CDCDE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19