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TMS28F002AEB70CDBJE

Texas Instruments

TMS28F002AEB70CDBJE by Texas Instruments

TMS28F002AEB70CDBJE by Texas Instruments is a 256Kx8 NOR flash memory with 3-STATE output, operating at 3V. It features industrial temperature grade, asynchronous mode, and supports up to 100000 Write/Erase cycles. Ideal for applications requiring fast access times and high endurance in a compact small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,587 parts In-Stock

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9,587

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Digiode

USA . 2,980 parts In-Stock

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2,980

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 551 parts In-Stock

1+ parts

$2.892

100+ parts

-

1k+ parts

$3.387

10k+ parts

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551

$2.892

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$3.387

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DigiPath Technology Company

USA . 2,285 parts In-Stock

1+ parts

$3.185

100+ parts

-

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2,285

$3.185

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ChromeModa Solutions

Germany . 3,911 parts In-Stock

1+ parts

$3.250

100+ parts

$2.665

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3,911

$3.250

$2.665

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IDEA Electronic Components Group

UK . 1,421 parts In-Stock

1+ parts

$3.250

100+ parts

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$2.925

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1,421

$3.250

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$2.925

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One Stop Electronics

USA . 282 parts In-Stock

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$8.000

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282

$8.000

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AZTECH Wire

Italy . 659 parts In-Stock

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$15.295

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659

$15.295

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Corphita

USA . 1,295 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the TMS28F002AEB70CDBJE by Texas Instruments. Designed for industrial use, this innovative memory device offers 262144 words of memory width, 8K to 128K sector sizes, and an impressive endurance of 100000 write/erase cycles. Perfect for a wide range of applications, from automotive to telecommunications, this memory IC provides customers with a seamless user interface, fast access times, and low standby current. Trust in Texas Instruments for top-notch technology that delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable means easy and efficient integration into circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of read and write operations, providing flexibility and speed in data handling.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage of 3V offers compatibility with a wide range of devices, ensuring seamless integration.

No. of Terminals: 44

Having a sufficient number of terminals allows for versatile connectivity and efficient data transfer within the system.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can withstand extended use in demanding industrial environments.

Output Characteristics: 3-STATE

3-STATE output allows for multiple devices to share a common bus, enabling efficient data communication and reducing interference.

Memory Density: 2097152 bit

The high memory density of 2097152 bits ensures ample storage capacity for data-intensive applications.

Maximum Access Time: 70 ns

With a fast maximum access time of 70 nanoseconds, the product provides quick read and write speeds for efficient data processing.

Technical Specifications

Flash Memory TMS28F002AEB70CDBJE attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

Length:

28.2 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.63 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

13.3 mm

Trade Compliance

TMS28F002AEB70CDBJE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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