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TMS28F002AEB80BDBJL

Texas Instruments

TMS28F002AEB80BDBJL by Texas Instruments

TMS28F002AEB80BDBJL by Texas Instruments is a 256Kx8 NOR Flash Memory with 3V nominal voltage. Operating in asynchronous mode, it offers 10000 Write/Erase cycles and has a max access time of 80ns. Ideal for applications requiring fast data access and reliable storage in commercial-grade devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,673 parts In-Stock

1+ parts

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8,673

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Digiode

USA . 1,778 parts In-Stock

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1,778

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 870 parts In-Stock

1+ parts

$3.482

100+ parts

$323.327

1k+ parts

$3.134

10k+ parts

-

870

$3.482

$323.327

$3.134

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DigiPath Technology Company

USA . 881 parts In-Stock

1+ parts

$3.834

100+ parts

-

1k+ parts

-

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881

$3.834

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ChromeModa Solutions

Germany . 871 parts In-Stock

1+ parts

$3.912

100+ parts

$3.208

1k+ parts

-

10k+ parts

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871

$3.912

$3.208

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IDEA Electronic Components Group

UK . 709 parts In-Stock

1+ parts

$3.912

100+ parts

-

1k+ parts

$3.521

10k+ parts

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709

$3.912

-

$3.521

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One Stop Electronics

USA . 1,515 parts In-Stock

1+ parts

$8.000

100+ parts

-

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1,515

$8.000

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AZTECH Wire

Italy . 883 parts In-Stock

1+ parts

$10.783

100+ parts

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883

$10.783

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Corphita

USA . 2,928 parts In-Stock

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2,928

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Overview

Upgrade your electronics with the TMS28F002AEB80BDBJL by Texas Instruments, a top-of-the-line flash memory solution that guarantees reliable performance and durability. As a leading manufacturer in the industry, Texas Instruments ensures superior quality and cutting-edge technology in every product they offer. Ideal for a wide range of applications, this flash memory device provides fast access times, low power consumption, and high memory density, making it the perfect choice for your electronic projects. Experience the value and benefits of Texas Instruments' innovative technology with the TMS28F002AEB80BDBJL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material combination offers durability and protection for the flash memory, ensuring it can withstand various environmental conditions.

Operating Mode: ASYNCHRONOUS

Enables independent operations without being synchronized to a clock signal, providing flexibility and efficiency in data handling.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level of 3V, which is common and easily compatible with many devices.

No. of Terminals: 44

Having a higher number of terminals allows for more connections and functionality, enhancing the overall performance and capabilities of the flash memory.

Memory Density: 2097152 bit

With a high memory density, this flash memory can store a large amount of data in a compact space, making it suitable for storing large files and applications.

Endurance: 10000 Write/Erase Cycles

The high endurance level ensures that the flash memory can handle frequent write and erase operations without degradation, providing reliability and longevity.

Technical Specifications

Flash Memory TMS28F002AEB80BDBJL attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

Additional Features:

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

Length:

28.2 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.63 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000008 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

13.3 mm

Trade Compliance

TMS28F002AEB80BDBJL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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