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TIC253E

Texas Instruments

TIC253E by Texas Instruments

4 QUADRANT LOGIC LEVEL TRIAC; Package Style (Meter): FLANGE MOUNT; Surface Mount: NO; Terminal Position: SINGLE; Configuration: SINGLE; Case Connection: MAIN TERMINAL 2;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,195 parts In-Stock

1+ parts

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2,195

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Digiode

USA . 1,562 parts In-Stock

1+ parts

-

100+ parts

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1,562

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 297 parts In-Stock

1+ parts

$2.100

100+ parts

-

1k+ parts

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297

$2.100

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-

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Parana Technologies

USA . 418 parts In-Stock

1+ parts

$4.249

100+ parts

$394.571

1k+ parts

$3.824

10k+ parts

-

418

$4.249

$394.571

$3.824

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DigiPath Technology Company

USA . 400 parts In-Stock

1+ parts

$4.679

100+ parts

-

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400

$4.679

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ChromeModa Solutions

Germany . 4,306 parts In-Stock

1+ parts

$4.774

100+ parts

$3.915

1k+ parts

-

10k+ parts

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4,306

$4.774

$3.915

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IDEA Electronic Components Group

UK . 1,790 parts In-Stock

1+ parts

$4.774

100+ parts

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1k+ parts

$4.297

10k+ parts

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1,790

$4.774

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$4.297

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AZTECH Wire

Italy . 895 parts In-Stock

1+ parts

$7.723

100+ parts

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895

$7.723

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One Stop Electronics

USA . 687 parts In-Stock

1+ parts

$11.100

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687

$11.100

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Semicontronic

India . 688 parts In-Stock

1+ parts

$20.100

100+ parts

$19.598

1k+ parts

$19.497

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688

$20.100

$19.598

$19.497

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Corphita

USA . 1,161 parts In-Stock

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1,161

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Corohmni

South Africa . 213 parts In-Stock

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213

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Technical Specifications

Triode For Alternating Current (TRIAC) TIC253E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

20 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC253E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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