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SN74V283-6GGM

Texas Instruments

SN74V283-6GGM by Texas Instruments

SN74V283-6GGM by Texas Instruments is a FIFO memory with 32KX18 organization, 166 MHz clock frequency, and 6 ns cycle time. It operates synchronously at 3.3V and is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,506 parts In-Stock

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8,506

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Digiode

USA . 2,196 parts In-Stock

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2,196

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LWI Electronics Inc

India . 3 parts In-Stock

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3

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Distributors (Availability)

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Parana Technologies

USA . 1,939 parts In-Stock

1+ parts

$1.998

100+ parts

-

1k+ parts

$2.526

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1,939

$1.998

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$2.526

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DigiPath Technology Company

USA . 311 parts In-Stock

1+ parts

$2.200

100+ parts

$2.024

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-

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311

$2.200

$2.024

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ChromeModa Solutions

Germany . 5,593 parts In-Stock

1+ parts

$2.245

100+ parts

$1.841

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5,593

$2.245

$1.841

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IDEA Electronic Components Group

UK . 2,296 parts In-Stock

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$2.245

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$2.020

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2,296

$2.245

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$2.020

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AZTECH Wire

Italy . 251 parts In-Stock

1+ parts

$7.675

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251

$7.675

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One Stop Electronics

USA . 504 parts In-Stock

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$27.000

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504

$27.000

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Corphita

USA . 1,241 parts In-Stock

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Microchip USA

USA . 383 parts In-Stock

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383

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Overview

Experience seamless data transfer with the Texas Instruments SN74V283-6GGM FIFO memory IC. Manufactured by a trusted industry leader, this high-quality product offers reliable performance and versatility for a wide range of applications. Its low profile, fine pitch package design ensures efficient space utilization, while its synchronous operation mode guarantees precise data synchronization. With a maximum clock frequency of 166 MHz and a memory density of 589824 bits, this FIFO memory IC provides exceptional value and efficiency for your projects. Trust in Texas Instruments for superior technology that meets all your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the FIFO, making it suitable for a variety of applications.

Cycle Time: 6 ns

The fast cycle time of 6 ns ensures quick data access and processing, making the FIFO efficient for high-speed operations.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for coordinated data transfers between the FIFO and other components, enhancing overall system performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with standard power sources and minimizes the risk of voltage fluctuations impacting the FIFO's functionality.

Maximum Clock Frequency (fCLK): 166 MHz

The high maximum clock frequency of 166 MHz enables rapid data processing and transfer speeds, making the FIFO suitable for demanding applications that require quick response times.

Memory Density: 589824 bit

The high memory density of 589824 bits allows the FIFO to store a large amount of data, making it ideal for applications that require extensive data buffering and retrieval.

Technical Specifications

FIFO SN74V283-6GGM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

4.5 ns

Additional Features:

CAN ALSO BE CONFIGURED AS 65536 X 9

Alternate Memory Width:

9

Maximum Clock Frequency (fCLK):

166 MHz

Cycle Time:

6 ns

JESD-30 Code:

S-PBGA-B100

Length:

10 mm

Memory Density:

589824 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

100

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.015 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

SN74V283-6GGM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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