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SN74HC04DBRE4

Texas Instruments

SN74HC04DBRE4 by Texas Instruments

SN74HC04DBRE4 by Texas Instruments is a logic gate with 6 functions, 24 ns propagation delay, and 120 ns tpd. It operates at a supply voltage of 2-6V and has a load capacitance of 50 pF. Ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,786 parts In-Stock

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Digiode

USA . 3,914 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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AZTECH Wire

Italy . 565 parts In-Stock

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$18.815

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$18.815

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Parana Technologies

USA . 952 parts In-Stock

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$25.906

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$26.505

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DigiPath Technology Company

USA . 281 parts In-Stock

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$28.526

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IDEA Electronic Components Group

UK . 1,558 parts In-Stock

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$29.108

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$27.653

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$26.197

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ChromeModa Solutions

Germany . 1,233 parts In-Stock

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$29.108

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$23.869

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Semicontronic

India . 1,353 parts In-Stock

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$29.250

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$29.100

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Ampacity Inc.

Singapore . 678 parts In-Stock

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$30.000

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One Stop Electronics

USA . 1,637 parts In-Stock

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Corohmni

South Africa . 35 parts In-Stock

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Continental Prestige Electronics

USA . 5,840 parts In-Stock

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Corphita

USA . 4,941 parts In-Stock

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Perfect Parts

USA . 2,615 parts In-Stock

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Microchip USA

USA . 2,355 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Argo Parts USA

USA . 479 parts In-Stock

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Overview

Unlock the power of digital circuits with the SN74HC04DBRE4 by Texas Instruments. Crafted with precision and expertise, this logic gate offers seamless performance for a wide range of applications. From industrial automation to consumer electronics, this product delivers reliability and efficiency. Experience the unparalleled quality and value that Texas Instruments is known for, with the SN74HC04DBRE4. Elevate your projects with this cutting-edge component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, allowing for easy handling and long-term reliability.

Propagation Delay At Nominal Supply: 24 ns

With a low propagation delay of 24 ns at nominal supply voltage, this product ensures fast signal processing and high-speed performance.

Surface Mount: YES

Being surface mountable, this product is easy to integrate onto circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard nominal supply voltage of 5V, making it compatible with common electronic systems and devices.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures up to 85°C, making it suitable for industrial environments and applications that require robust performance.

Technology: CMOS

Utilizes CMOS technology, known for its low power consumption and high noise immunity, ensuring efficient and reliable operation.

Technical Specifications

Logic Gates SN74HC04DBRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

6.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

24 ns

Propagation Delay (tpd):

120 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

SN74HC04DBRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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