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SMJ27C128-15JM

Texas Instruments

SMJ27C128-15JM by Texas Instruments

SMJ27C128-15JM by Texas Instruments is a 16KX8 EPROM with 125°C max temp, -55°C min temp, and 150 ns access time. Ideal for military applications due to its MIL-STD screening and 883B compliance. Features include 5V supply voltage, 28 terminals, and common I/O type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,892 parts In-Stock

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Digiode

USA . 2,229 parts In-Stock

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One Stop Electronics

USA . 1,348 parts In-Stock

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$1.000

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$1.000

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Parana Technologies

USA . 1,915 parts In-Stock

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$4.962

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$5.505

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$4.962

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DigiPath Technology Company

USA . 338 parts In-Stock

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$5.464

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338

$5.464

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ChromeModa Solutions

Germany . 1,228 parts In-Stock

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$5.575

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$4.572

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IDEA Electronic Components Group

UK . 166 parts In-Stock

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$5.575

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$5.018

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166

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$5.018

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AZTECH Wire

Italy . 380 parts In-Stock

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$18.668

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$18.668

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A-Z Elektronik GmbH

Germany . 4,952 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Overview

Discover the exceptional quality and reliability of the SMJ27C128-15JM by Texas Instruments, a top-of-the-line EPROM chip designed to meet the highest industry standards. Perfect for military-grade applications, this memory device offers fast access times and low standby currents, ensuring optimal performance in demanding environments. With Texas Instruments' renowned reputation for innovation and excellence, you can trust that this EPROM will deliver superior value and benefits to meet your specific needs. Elevate your projects with the unmatched advantages of the SMJ27C128-15JM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the EPROM, making it suitable for harsh environments.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the EPROM, providing flexibility in timing and data retrieval.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with most systems and power sources.

No. of Words: 16384 words

Offers a large memory capacity for storing data, programs, and instructions.

Technology: CMOS

CMOS technology provides low power consumption, reducing energy costs and heat generation.

Maximum Access Time: 150 ns

Fast access time allows for quick retrieval of data, improving system performance.

Technical Specifications

EPROM SMJ27C128-15JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C128-15JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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