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PAL16R6AMFKB

Texas Instruments

PAL16R6AMFKB by Texas Instruments

OT PLD; Grading Of Temperature: MILITARY; Form Of Terminal: NO LEAD; No. of Terminals: 20; Package Code: QCCN; Package Shape: SQUARE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,434 parts In-Stock

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Digiode

USA . 964 parts In-Stock

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964

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Mil-Aero Solutions, Inc.

USA . 72 parts In-Stock

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72

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 791 parts In-Stock

1+ parts

$13.000

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-

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791

$13.000

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AZTECH Wire

Italy . 363 parts In-Stock

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$15.829

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363

$15.829

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Parana Technologies

USA . 1,035 parts In-Stock

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$48.978

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$48.978

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DigiPath Technology Company

USA . 2,162 parts In-Stock

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$53.931

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$49.617

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2,162

$53.931

$49.617

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ChromeModa Solutions

Germany . 2,562 parts In-Stock

1+ parts

$55.032

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$45.126

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2,562

$55.032

$45.126

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IDEA Electronic Components Group

UK . 309 parts In-Stock

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$55.032

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$52.280

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$49.529

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309

$55.032

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$49.529

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Corphita

USA . 3,111 parts In-Stock

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Microchip USA

USA . 2,529 parts In-Stock

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2,529

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Technical Specifications

Programmable Logic Devices (PLD) PAL16R6AMFKB attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

In-System Programmable:

No

Organization:

8 Dedicated Inputs, 2 I/O

No. of Outputs:

6

Output Function:

Mixed

No. of Inputs:

10

No. of Product Terms:

64

No. of Dedicated Inputs:

8

No. of I/O Lines:

2

Maximum Clock Frequency:

25 MHz

Propagation Delay:

30 ns

Technology:

TTL

Architecture:

PAL-TYPE

Sub-Category:

Programmable Logic Devices

Power Characteristics

Nominal Supply Voltage:

5

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage:

5.5 V

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

125 °C (257 °F)

Minimum Operating Temperature:

-55 °C (-67 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic, Metal-Sealed Cofired

Package Style (Meter):

Chip Carrier

Package Code:

Package Shape:

Package Equivalence Code:

LCC20,.35SQ

Width:

8.89 mm

Length:

8.89 mm

Maximum Seated Height:

2.03 mm

Packing Method:

Tube

Terminal Characteristcs

Terminal Position:

Quad

Terminal Form:

No. of Terminals:

20

Terminal Pitch:

1.27 mm

Terminal Finish:

Tin Lead

Standards

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

JTAG Boundary Scan Test:

No

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Trade Compliance

PAL16R6AMFKB Programmable ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-264-5239, 5962012645239

NIIN

012645239

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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