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ONET9901PARGPG4

Texas Instruments

ONET9901PARGPG4 by Texas Instruments

ONET9901PARGPG4 by Texas Instruments is a 20-terminal chip carrier with a 3.3V supply voltage, ideal for SDH and SONET applications. It operates b/w 0-85°C, with a low supply current of 0.055mA. This telecom IC supports ATM/SONET/SDH circuits in a compact square package suitable for surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,407 parts In-Stock

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5,407

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Digiode

USA . 3,895 parts In-Stock

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3,895

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Vyrian

USA . 2,055 parts In-Stock

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2,055

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,222 parts In-Stock

1+ parts

$7.747

100+ parts

-

1k+ parts

$8.285

10k+ parts

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1,222

$7.747

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$8.285

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DigiPath Technology Company

USA . 1,944 parts In-Stock

1+ parts

$8.531

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1,944

$8.531

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AZTECH Wire

Italy . 314 parts In-Stock

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$8.634

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314

$8.634

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ChromeModa Solutions

Germany . 6,910 parts In-Stock

1+ parts

$8.705

100+ parts

$7.138

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6,910

$8.705

$7.138

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IDEA Electronic Components Group

UK . 1,458 parts In-Stock

1+ parts

$8.705

100+ parts

$8.270

1k+ parts

$7.834

10k+ parts

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1,458

$8.705

$8.270

$7.834

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One Stop Electronics

USA . 248 parts In-Stock

1+ parts

$195.000

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248

$195.000

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Corphita

USA . 1,792 parts In-Stock

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1,792

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Perfect Parts

USA . 874 parts In-Stock

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874

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Microchip USA

USA . 159 parts In-Stock

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159

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Overview

Unleash the power of cutting-edge technology with the ONET9901PARGPG4 by Texas Instruments. Crafted with precision and expertise, this ATM/SONET/SDH circuit offers unparalleled performance and reliability in SDH and SONET applications. With a package body material of plastic/epoxy and a surface mount design, this product is designed for seamless integration into your projects. Experience the value and benefits of this high-quality telecom IC type, with a nominal supply voltage of 3.3V and a maximum operating temperature of 85°C. Elevate your projects with the ONET9901PARGPG4 and unlock endless possibilities in the world of telecommunications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Surface mount technology allows for easy installation and efficient use of space on a circuit board.

Package Shape: SQUARE

The square package shape provides a compact design, saving space on the circuit board.

Power Supplies (V): 3.3

Operating at a voltage of 3.3V makes the product energy-efficient and suitable for a variety of applications.

No. of Terminals: 20

Having 20 terminals allows for connectivity to various components, enhancing the versatility of the product.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The package style of chip carrier, heat sink/slug, and very thin profile ensures efficient heat dissipation and space-saving design.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand high temperatures, ensuring reliability in different environments.

Minimum Operating Temperature: 0 °C

Operating at a minimum temperature of 0°C allows the product to function in cold environments without any issues.

Terminal Position: QUAD

The quad terminal position provides stability and ease of connection, improving the overall performance of the product.

Maximum Seated Height: 1 mm

The maximum seated height of 1mm ensures a low profile design, making the product suitable for applications with space constraints.

Width: 4 mm

With a width of 4mm, the product is compact and can fit into tight spaces on a circuit board.

Length: 4 mm

The length of 4mm complements the width, providing a square shape that maximizes space efficiency.

Applications: SDH; SONET

Designed for SDH and SONET applications, the product meets industry standards and ensures compatibility with existing systems.

Terminal Form: NO LEAD

The no lead terminal form reduces the risk of damage during installation and improves the overall reliability of the product.

Maximum Supply Current: 0.055 mA

Operating at a maximum supply current of 0.055mA ensures energy efficiency and minimizes power consumption.

Telecom IC Type: ATM/SONET/SDH SUPPORT CIRCUIT

A specialized ATM/SONET/SDH support circuit meets the requirements of telecommunications networks, ensuring reliable data transmission.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V, the product is compatible with standard power sources and can be easily integrated into existing systems.

Terminal Pitch: 0.5 mm

With a terminal pitch of 0.5mm, the product allows for high-density mounting on a circuit board, maximizing space efficiency.

Technical Specifications

ATM/SONET/SDH Circuits ONET9901PARGPG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-PQCC-N20

Length:

4 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

ATM/SONET/SDH ICs

Maximum Supply Current:

.055 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4 mm

Trade Compliance

ONET9901PARGPG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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