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ONET8531TYS9

Texas Instruments

ONET8531TYS9 by Texas Instruments

ONET8531TYS9 by Texas Instruments is a telecom IC for SONET applications. It operates at 3.3V with a max supply current of 44mA. With an industrial temperature grade, it supports ATM/SONET/SDH circuits in a surface-mount rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,792 parts In-Stock

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Bristol Electronics

USA . 1,344 parts In-Stock

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Digiode

USA . 1,244 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 810 parts In-Stock

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$5.696

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810

$5.696

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Parana Technologies

USA . 1,347 parts In-Stock

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$9.492

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$10.097

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$9.492

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$10.097

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ChromeModa Solutions

Germany . 3,414 parts In-Stock

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$10.665

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$8.745

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$10.665

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IDEA Electronic Components Group

UK . 789 parts In-Stock

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$10.665

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$10.132

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$9.598

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789

$10.665

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$9.598

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Microchip USA

USA . 1,368 parts In-Stock

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$27.912

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$27.912

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One Stop Electronics

USA . 136 parts In-Stock

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$29.000

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$29.000

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Semicontronic

India . 1,163 parts In-Stock

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$794.000

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$774.150

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$770.180

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Ampacity Inc.

Singapore . 1,597 parts In-Stock

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$952.000

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Lixinc

USA . 18,967 parts In-Stock

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Corphita

USA . 3,015 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,033 parts In-Stock

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DigiPath Technology Company

USA . 1,018 parts In-Stock

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$9.616

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$9.616

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Perfect Parts

USA . 874 parts In-Stock

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Corohmni

South Africa . 411 parts In-Stock

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Overview

Unlock the power of high-speed telecommunications with the ONET8531TYS9 by Texas Instruments. This cutting-edge ATM/SONET/SDH circuit is designed to deliver unparalleled quality and reliability, thanks to the renowned expertise of its manufacturer. Perfect for SONET applications, this surface-mount chip offers exceptional value and benefits to customers seeking top-notch performance in their telecom ICs. Experience the advantages of Texas Instruments technology with the ONET8531TYS9 - where innovation meets excellence.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly, making this product a convenient choice for circuit board integration.

Power Supplies (V): 3.3

Operating at 3.3V ensures compatibility with standard power supplies, making integration into existing systems seamless.

Package Style (Meter): UNCASED CHIP

The unencased chip design offers a compact and lightweight solution, ideal for applications where space is limited.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this product can withstand high temperature environments, ensuring reliability under challenging conditions.

Minimum Operating Temperature: -40 °C

The product's ability to operate at temperatures as low as -40°C makes it suitable for a wide range of operating environments.

Width: 0.94 mm

The compact width of the product allows for space-saving integration into electronic systems, especially in applications where size constraints are a concern.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this product meets the requirements for operation in harsh environments, ensuring reliable performance in demanding conditions.

Applications: SONET

Specifically designed for SONET applications, this product offers optimized performance and compatibility within SONET network systems.

Technical Specifications

ATM/SONET/SDH Circuits ONET8531TYS9 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Additional Features:

Data rate is 11.3 Gbps

Applications:

SONET

JESD-30 Code:

R-XUUC-N19

Length:

1.195 mm

No. of Functions:

1

No. of Terminals:

19

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Equivalence Code:

DIE OR CHIP

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

44 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

.94 mm

Trade Compliance

ONET8531TYS9 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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