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MC10SX1127D

Onsemi

MC10SX1127D by Onsemi

MC10SX1127D by Onsemi is an ATM/SONET/SDH circuit with -5.2V power supply, 16 terminals, and industrial temperature grade. It is used in ATM and SONET applications, featuring ECL10K technology and GULL WING terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,166 parts In-Stock

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Vyrian

USA . 183 parts In-Stock

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183

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TANS Electronics

Latvia . 7,625 parts In-Stock

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7,625

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Corphita

USA . 1,571 parts In-Stock

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1,571

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Kulean Microsystems

USA . 1,146 parts In-Stock

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1,146

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UHIMA Technologies

Türkiye . 681 parts In-Stock

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681

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SupplyDigital Components

Austria . 385 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Problanco Electronics

Mexico . 105 parts In-Stock

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Overview

Enhance your telecommunication projects with the MC10SX1127D by Onsemi, a top-tier manufacturer known for producing high-quality ATM/SONET/SDH circuits. This compact and efficient device offers unparalleled performance and reliability for applications in ATM and SONET technologies. With a wide temperature range and low power consumption, this product provides exceptional value and benefits to customers looking for a reliable solution for their telecom needs. Upgrade your projects with the MC10SX1127D and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs, making it convenient for compact designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature makes it suitable for industrial environments where temperature fluctuations may occur.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good electrical conductivity and solderability, enhancing the overall performance and reliability of the product.

Nominal Supply Voltage: 5 V

Having a 5V nominal supply voltage makes it compatible with a wide range of systems and power sources, increasing its versatility.

Technical Specifications

ATM/SONET/SDH Circuits MC10SX1127D attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Onsemi

Specs

Applications:

ATM; SONET

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

9.9 mm

Nominal Negative Supply Voltage:

-5.2 V

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

-5.2

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

ATM/SONET/SDH ICs

Maximum Supply Current:

.045 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL10K

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MC10SX1127D Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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