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ONET8531TY

Texas Instruments

ONET8531TY by Texas Instruments

ONET8531TY by Texas Instruments is a telecom IC for SONET applications. It operates at 3.3V with a max supply current of 44mA. This surface-mount chip has 19 terminals and an industrial temperature grade, suitable for ATM/SONET/SDH circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,812 parts In-Stock

1+ parts

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4,812

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Digiode

USA . 1,460 parts In-Stock

1+ parts

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-

1k+ parts

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1,460

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,503 parts In-Stock

1+ parts

$8.597

100+ parts

-

1k+ parts

$9.260

10k+ parts

-

1,503

$8.597

-

$9.260

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ChromeModa Solutions

Germany . 1,881 parts In-Stock

1+ parts

$9.660

100+ parts

$7.921

1k+ parts

-

10k+ parts

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1,881

$9.660

$7.921

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IDEA Electronic Components Group

UK . 625 parts In-Stock

1+ parts

$9.660

100+ parts

$9.177

1k+ parts

$8.694

10k+ parts

-

625

$9.660

$9.177

$8.694

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AZTECH Wire

Italy . 595 parts In-Stock

1+ parts

$12.867

100+ parts

-

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595

$12.867

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Microchip USA

USA . 1,541 parts In-Stock

1+ parts

$19.650

100+ parts

$19.530

1k+ parts

$19.470

10k+ parts

$19.410

1,541

$19.650

$19.530

$19.470

$19.410

Component Stockers USA

USA . 622 parts In-Stock

1+ parts

$99.990

100+ parts

-

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622

$99.990

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One Stop Electronics

USA . 352 parts In-Stock

1+ parts

$386.000

100+ parts

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352

$386.000

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Semicontronic

India . 297 parts In-Stock

1+ parts

$825.000

100+ parts

$804.375

1k+ parts

$800.250

10k+ parts

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297

$825.000

$804.375

$800.250

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Corphita

USA . 4,934 parts In-Stock

1+ parts

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4,934

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DigiPath Technology Company

USA . 1,326 parts In-Stock

1+ parts

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100+ parts

$8.709

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1,326

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$8.709

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Perfect Parts

USA . 874 parts In-Stock

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874

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Overview

Unlock the power of high-speed networking with the ONET8531TY by Texas Instruments. Manufactured with precision and expertise, this ATM/SONET/SDH circuit offers unparalleled reliability and performance. Ideal for SONET applications, this surface-mount chip provides a seamless experience with its compact design and industrial-grade temperature range. With a nominal supply voltage of 3.3V and maximum supply current of 44mA, the ONET8531TY delivers exceptional value and benefits to customers seeking quality telecom IC solutions. Elevate your networking capabilities with Texas Instruments today.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Power Supplies (V): 3.3

Operating at a low voltage of 3.3V makes this product energy efficient and suitable for various applications with low power requirements.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100°C, this product is reliable and can withstand tough environmental conditions.

Applications: SONET

Designed specifically for SONET applications, ensuring compatibility and optimized performance in telecommunications networks.

Width: 0.94 mm

The compact width of 0.94mm allows for high-density packing of components, making it ideal for space-constrained designs.

Technical Specifications

ATM/SONET/SDH Circuits ONET8531TY attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Additional Features:

Data rate is 11.3 Gbps

Applications:

SONET

JESD-30 Code:

R-XUUC-N19

Length:

1.195 mm

No. of Functions:

1

No. of Terminals:

19

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Equivalence Code:

DIE OR CHIP

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

44 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

.94 mm

Trade Compliance

ONET8531TY Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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