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ONET4201PARGTTG4

Texas Instruments

ONET4201PARGTTG4 by Texas Instruments

ONET4201PARGTTG4 by Texas Instruments is an ATM/SONET/SDH circuit with a 3.3V supply, suitable for SDH and SONET applications. It features a 16-terminal chip carrier package with a very thin profile, operating in industrial temperature range of -40 to 85°C. The IC supports no-lead terminal form and has a max supply current of 45mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,615 parts In-Stock

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2,615

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Digiode

USA . 2,604 parts In-Stock

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2,604

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Distributors (Availability)

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AZTECH Wire

Italy . 805 parts In-Stock

1+ parts

$10.712

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805

$10.712

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Parana Technologies

USA . 1,316 parts In-Stock

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$10.860

100+ parts

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$11.337

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1,316

$10.860

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$11.337

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DigiPath Technology Company

USA . 1,245 parts In-Stock

1+ parts

$11.958

100+ parts

$11.001

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1,245

$11.958

$11.001

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ChromeModa Solutions

Germany . 1,766 parts In-Stock

1+ parts

$12.202

100+ parts

$10.006

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1,766

$12.202

$10.006

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IDEA Electronic Components Group

UK . 299 parts In-Stock

1+ parts

$12.202

100+ parts

$11.592

1k+ parts

$10.982

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299

$12.202

$11.592

$10.982

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One Stop Electronics

USA . 494 parts In-Stock

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$704.000

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494

$704.000

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Corphita

USA . 2,496 parts In-Stock

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Microchip USA

USA . 2,139 parts In-Stock

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Overview

Elevate your telecom systems with the ONET4201PARGTTG4 by Texas Instruments. Designed for SDH and SONET applications, this ATM/SONET/SDH circuit offers unmatched quality and reliability. With its advanced technology and innovative design, Texas Instruments delivers a product that exceeds industry standards. The compact square package, surface mount capability, and wide temperature range make it ideal for industrial settings. Experience seamless performance, optimal power efficiency, and easy integration with the ONET4201PARGTTG4. Upgrade your telecom setup today and stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and reliability are important factors.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and simplifying assembly processes.

Power Supplies (V): 3.3

The 3.3V power supply requirement is commonly found in many electronic systems, making this product compatible with a wide range of applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures the product can withstand harsh environmental conditions without performance degradation.

Applications: SDH; SONET

The product is specifically designed for SDH and SONET applications, ensuring compatibility and optimized performance in telecommunications networks.

Technical Specifications

ATM/SONET/SDH Circuits ONET4201PARGTTG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

ATM/SONET/SDH ICs

Maximum Supply Current:

45 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET4201PARGTTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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