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ONET3301PARGTTG4

Texas Instruments

ONET3301PARGTTG4 by Texas Instruments

ONET3301PARGTTG4 by Texas Instruments is an ATM/SONET/SDH circuit with a package style of chip carrier, heat sink/slug, and very thin profile. It operates in industrial temperature grade range from -40 to 85°C, supporting SDH and SONET applications at a nominal voltage of 3.3V. This telecom IC has 16 terminals in a square package shape with surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,207 parts In-Stock

1+ parts

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7,207

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Digiode

USA . 590 parts In-Stock

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590

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,444 parts In-Stock

1+ parts

$7.727

100+ parts

-

1k+ parts

$8.261

10k+ parts

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1,444

$7.727

-

$8.261

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DigiPath Technology Company

USA . 1,537 parts In-Stock

1+ parts

$8.508

100+ parts

$7.828

1k+ parts

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1,537

$8.508

$7.828

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ChromeModa Solutions

Germany . 6,813 parts In-Stock

1+ parts

$8.682

100+ parts

$7.119

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6,813

$8.682

$7.119

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IDEA Electronic Components Group

UK . 187 parts In-Stock

1+ parts

$8.682

100+ parts

$8.248

1k+ parts

$7.814

10k+ parts

-

187

$8.682

$8.248

$7.814

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AZTECH Wire

Italy . 561 parts In-Stock

1+ parts

$17.252

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561

$17.252

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One Stop Electronics

USA . 832 parts In-Stock

1+ parts

$206.000

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832

$206.000

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Corphita

USA . 4,301 parts In-Stock

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4,301

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Perfect Parts

USA . 874 parts In-Stock

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874

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Microchip USA

USA . 233 parts In-Stock

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233

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Overview

Discover the innovative ONET3301PARGTTG4 by Texas Instruments, a top-tier manufacturer known for superior quality and reliability. This telecom IC type is designed for ATM/SONET/SDH circuits, making it ideal for SDH and SONET applications. With advanced features like no lead terminal form, very thin profile package style, and industrial temperature grade, this product offers unmatched value and benefits to customers. Experience seamless performance and enhanced functionality with the ONET3301PARGTTG4, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for telecommunications applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can function reliably in various industrial environments without risk of overheating.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3V is commonly used in many electronic devices, ensuring compatibility and ease of integration into existing systems.

Applications: SDH; SONET

Designed specifically for SDH and SONET applications, this product is tailored to meet the requirements of these telecommunications technologies.

Technical Specifications

ATM/SONET/SDH Circuits ONET3301PARGTTG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET3301PARGTTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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