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MSC1202Y2RHHTG4

Texas Instruments

MSC1202Y2RHHTG4 by Texas Instruments

The Texas Instruments MSC1202Y2RHHTG4 is an 8-bit microcontroller with a max clock frequency of 33 MHz. It features 128 bytes of RAM and 2K data EEPROM size, suitable for automotive applications. With ADC channels, DAC channels, and connectivity options like SSI and UART(2), it offers versatile functionality in a compact chip carrier package style.

Median Price

$82.719

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$82.719

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50

$82.719

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Vyrian

USA . 2,014 parts In-Stock

1+ parts

-

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2,014

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Digiode

USA . 1,066 parts In-Stock

1+ parts

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1,066

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 419 parts In-Stock

1+ parts

$4.000

100+ parts

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419

$4.000

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AZTECH Wire

Italy . 649 parts In-Stock

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$17.170

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649

$17.170

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Parana Technologies

USA . 1,108 parts In-Stock

1+ parts

$57.777

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1,108

$57.777

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ChromeModa Solutions

Germany . 1,643 parts In-Stock

1+ parts

$64.918

100+ parts

$53.233

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1,643

$64.918

$53.233

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IDEA Electronic Components Group

UK . 1,025 parts In-Stock

1+ parts

$64.918

100+ parts

$61.672

1k+ parts

$58.426

10k+ parts

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1,025

$64.918

$61.672

$58.426

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Corphita

USA . 3,207 parts In-Stock

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3,207

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DigiPath Technology Company

USA . 1,955 parts In-Stock

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$58.530

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1,955

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$58.530

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Microchip USA

USA . 1,906 parts In-Stock

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1,906

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Overview

Discover the Texas Instruments MSC1202Y2RHHTG4 microcontroller, a high-quality product designed to meet your needs with precision and reliability. As a leader in the industry, Texas Instruments ensures top-notch performance in every application, making this microcontroller a versatile solution for your projects. With features like DAC channels, ADC channels, and boundary scan capability, this innovative product offers value and benefits that cater to your specific requirements. Trust Texas Instruments to deliver excellence in technology, providing you with an edge in your creations.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Lightweight and durable material, ideal for portable and rugged applications.

Maximum Supply Voltage 5.25 V

Allows for a higher supply voltage, providing flexibility in powering the device and supporting various peripherals.

ADC Channels YES

Analog-to-digital converter channels allow for precise measurement and control of analog signals, enhancing the device's functionality.

ROM Words 4096

Large ROM capacity enables storing a significant amount of program data and instructions for efficient operation.

Maximum Operating Temperature 125 °C

Wide operating temperature range makes it suitable for harsh environments such as automotive applications.

Peripheral IC Type MICROCONTROLLER

Specialized integrated peripherals enhance the device's capabilities and make it a versatile choice for various applications.

Technical Specifications

Microcontrollers MSC1202Y2RHHTG4 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

ALSO OPERATES AT 2.7V SUPPLY

Address Bus Width:

0

Bit Size:

8

Boundary Scan:

YES

CPU Family:

8051

Maximum Clock Frequency:

33 MHz

DAC Channels:

YES

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

2

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

16

No. of Serial I/Os:

1

No. of Terminals:

36

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

RAM Bytes:

128

ROM Words:

4096

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

33 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Peripheral IC Type:

Data EEPROM Size:

2K

Connectivity:

SSI, UART(2)

Peripherals:

BOR, TIMER(3), WDT

Analog To Digital Convertors:

8-Ch 16-Bit

Digital To Analog Convertors:

1-Ch 8-Bit

Trade Compliance

MSC1202Y2RHHTG4 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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