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LM3S9U81-IBZ80-A2

Texas Instruments

LM3S9U81-IBZ80-A2 by Texas Instruments

LM3S9U81-IBZ80-A2 by Texas Instruments is a 32-bit microcontroller with Cortex-M3 CPU, 108 terminals, and 393216 ROM words. It features 16-Ch 12-Bit ADCs, CAN, Ethernet, USB connectivity, and operates at up to 16.384 MHz. Ideal for industrial applications requiring high-speed data processing and multiple peripherals integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,941 parts In-Stock

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Digiode

USA . 4,722 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 681 parts In-Stock

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$9.563

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Parana Technologies

USA . 68 parts In-Stock

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$18.813

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$18.895

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68

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$18.895

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DigiPath Technology Company

USA . 1,119 parts In-Stock

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$20.715

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ChromeModa Solutions

Germany . 3,651 parts In-Stock

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$21.138

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$17.333

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3,651

$21.138

$17.333

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IDEA Electronic Components Group

UK . 76 parts In-Stock

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$21.138

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$20.081

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$19.024

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76

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$19.024

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One Stop Electronics

USA . 1,344 parts In-Stock

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$32.000

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Corphita

USA . 2,355 parts In-Stock

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Microchip USA

USA . 176 parts In-Stock

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Overview

Unleash the power of innovation with the LM3S9U81-IBZ80-A2 by Texas Instruments, a cutting-edge microcontroller designed to elevate your projects to new heights. With a wide range of peripherals including BOD, DMA, PWM, and more, this device offers unparalleled performance and flexibility. Whether you're working on industrial automation, consumer electronics, or IoT applications, this Cortex-M3 CPU family member delivers seamless connectivity and reliability. Trust in Texas Instruments' renowned quality and expertise to bring your ideas to life with the LM3S9U81-IBZ80-A2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and labor costs.

Maximum Supply Voltage: 1.365 V

Efficient power consumption and optimized performance at a low voltage.

Address Bus Width: 28

Allows for efficient memory addressing and data retrieval, enhancing overall system performance.

Package Shape: SQUARE

Saves board space and allows for compact design in various applications.

Bit Size: 32

Provides advanced processing capabilities for various tasks and applications.

Power Supplies (V): 1.3,3.3

Operates efficiently at multiple supply voltages, offering flexibility in power management.

No. of Terminals: 108

Offers ample I/O capabilities for connecting to peripherals and external devices.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Enables high-density mounting and efficient signal routing on PCBs.

Minimum Supply Voltage: 1.235 V

Ensures stable operation even at low voltage levels, improving energy efficiency.

Technical Specifications

Microcontrollers LM3S9U81-IBZ80-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

28

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

65

No. of Terminals:

108

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

393216

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

210 mA

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN(3), ETHERNET(2), I2C(2), I2S, IRDA, LIN, MICROWIRE, SPI, SSI(2), UART(3), USB

Peripherals:

BOD, COMPARATOR(3), DMA(32), POR, PWM(8), RTC, TIMER(5), WDT(2)

Analog To Digital Convertors:

16-Ch 12-Bit

Trade Compliance

LM3S9U81-IBZ80-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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