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LM3S818-EGZ50-C2

Texas Instruments

LM3S818-EGZ50-C2 by Texas Instruments

LM3S818-EGZ50-C2 by Texas Instruments is a 32-bit microcontroller with 48 terminals, 8192 bytes of RAM, and 65536 ROM words. It operates at a max clock frequency of 8 MHz and has PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,928 parts In-Stock

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Digiode

USA . 4,733 parts In-Stock

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AZTECH Wire

Italy . 510 parts In-Stock

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$19.103

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510

$19.103

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One Stop Electronics

USA . 761 parts In-Stock

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$34.000

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Parana Technologies

USA . 1,488 parts In-Stock

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$68.162

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ChromeModa Solutions

Germany . 5,700 parts In-Stock

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$76.587

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$62.801

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$76.587

$62.801

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IDEA Electronic Components Group

UK . 1,956 parts In-Stock

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$76.587

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$72.758

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$68.928

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$68.928

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Corphita

USA . 3,843 parts In-Stock

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Microchip USA

USA . 1,301 parts In-Stock

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DigiPath Technology Company

USA . 577 parts In-Stock

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$69.051

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Overview

Elevate your electronic projects with the LM3S818-EGZ50-C2 microcontroller from Texas Instruments. Known for their high-quality products, Texas Instruments delivers top-notch performance and reliability in this 32-bit microcontroller. Ideal for a wide range of applications, this chip carrier package boasts 65536 ROM words and 8192 RAM bytes, offering customers unparalleled value and flexibility. Whether you're a hobbyist or a professional, this industrial-grade microcontroller is sure to exceed your expectations with its 8 MHz maximum clock frequency and 30 I/O lines. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 3.6 V

Supports a high maximum supply voltage, allowing for compatibility with a range of power sources.

Package Shape: SQUARE

Square package shape provides a compact and efficient design for easy placement on PCBs.

Bit Size: 32

32-bit processing capability provides enhanced performance and efficiency for handling complex operations.

Power Supplies (V): 3.3

Stable power supply at 3.3V ensures reliable operation of the microcontroller.

No. of Terminals: 48

Ample number of terminals allow for extensive connectivity options and peripheral integration.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers durability and protection for the microcontroller.

Minimum Supply Voltage: 3 V

Low minimum supply voltage ensures power efficiency and compatibility with various power sources.

Maximum Operating Temperature: 105 °C

High maximum operating temperature makes the microcontroller suitable for industrial applications where heat resistance is required.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance in cold environments.

ADC Channels: YES

ADC channels enable the microcontroller to convert analog signals to digital data, expanding its versatility.

Terminal Position: QUAD

Quad terminal position provides efficient layout for connecting peripherals and components.

ROM Words: 65536

Large ROM capacity allows for storage of firmware and data, accommodating complex programs.

Maximum Seated Height: 1 mm

Low seated height enables compact design and easy integration into tight spaces.

Width: 6.875 mm

Narrow width facilitates space-saving placement on the PCB.

Maximum Clock Frequency: 8 MHz

High maximum clock frequency supports fast processing speeds and efficient performance.

Length: 6.875 mm

Compact length allows for efficient use of PCB real estate.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in harsh environmental conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture microcontroller offers efficient processing and high performance for various applications.

RAM Bytes: 8192

Ample RAM capacity supports smooth multitasking and data processing.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity for optimized performance.

Terminal Form: NO LEAD

Lead-free terminal form is environmentally friendly and complies with RoHS regulations.

Maximum Supply Current: 110 mA

Moderate supply current consumption ensures energy efficiency and reliable operation.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage of 3.3V ensures consistent and reliable performance.

PWM Channels: YES

PWM channels enable precise control of pulse-width modulation, useful for motor control and analog signal manipulation.

ROM Programmability: FLASH

Flash ROM programmability allows for convenient and quick firmware updates and storage.

Terminal Pitch: 0.5 mm

Fine terminal pitch of 0.5mm enables high-density mounting for compact PCB design.

Speed: 50 rpm

Supports a moderate speed of 50 rpm for applications requiring motor control or speed regulation.

No. of I/O Lines: 30

Sufficient number of I/O lines for versatile connectivity and peripheral interfacing.

Technical Specifications

Microcontrollers LM3S818-EGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

30

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S818-EGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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