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LM3S815-EGZ50-C2T

Texas Instruments

LM3S815-EGZ50-C2T by Texas Instruments

LM3S815-EGZ50-C2T by Texas Instruments is a 32-bit microcontroller with 65536 ROM words and 8192 RAM bytes. It operates at a max clock frequency of 8 MHz, suitable for industrial applications requiring high-speed processing and ADC channels for analog signal conversion. With a package style of chip carrier and terminal pitch of 0.5 mm, it offers compact design solutions for various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,657 parts In-Stock

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Digiode

USA . 4,177 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 520 parts In-Stock

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$19.571

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520

$19.571

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One Stop Electronics

USA . 1,454 parts In-Stock

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$21.000

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Parana Technologies

USA . 226 parts In-Stock

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$49.965

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DigiPath Technology Company

USA . 375 parts In-Stock

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$55.018

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375

$55.018

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ChromeModa Solutions

Germany . 4,829 parts In-Stock

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$56.141

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$46.036

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IDEA Electronic Components Group

UK . 1,212 parts In-Stock

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$56.141

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$53.334

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$50.527

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$50.527

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QUARKTWIN TECHNOLOGY LTD

USA . 11,019 parts In-Stock

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Microchip USA

USA . 3,441 parts In-Stock

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Corphita

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Overview

Elevate your projects with the LM3S815-EGZ50-C2T microcontroller from Texas Instruments. Designed with precision and reliability in mind, this innovative product is perfect for a wide range of applications. With advanced technology and top-notch performance, Texas Instruments delivers unparalleled quality and value to customers. Experience seamless operation and enhanced functionality with this cutting-edge microcontroller. Upgrade your projects today and unlock endless possibilities with the LM3S815-EGZ50-C2T.

Feature Benefit Bullets

Surface Mount: YES

Surface mount allows for easy and compact mounting, saving space on PCBs.

Maximum Supply Voltage: 3.6 V

Allows for flexibility in power supply options within safe operating limits.

Package Shape: SQUARE

Square shape is easy to handle and fits well in many circuit designs.

Bit Size: 32

32-bit architecture provides high performance for a wide range of applications.

Power Supplies (V): 3.3

Common power supply voltage, easily available and compatible with many components.

No. of Terminals: 48

Sufficient number of terminals for connecting various peripherals and components.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers protection and easy handling during manufacturing and assembly.

Minimum Supply Voltage: 3 V

Wide range of supply voltage options for flexibility in power management.

Maximum Operating Temperature: 105 °C

High operating temperature range suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in harsh environments.

ADC Channels: YES

Built-in ADC channels for analog signal processing.

Terminal Position: QUAD

Quad terminal position for easy connection and routing of signals.

ROM Words: 65536

Large ROM capacity for storing program instructions and data.

Maximum Seated Height: 1 mm

Low profile design for compact and slim devices.

Width: 6.875 mm

Narrow width for space-efficient PCB layout.

Maximum Clock Frequency: 8 MHz

High clock frequency for fast operation and real-time processing.

Length: 6.875 mm

Compact length for size-constrained applications.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance for reliable performance in tough conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC-based microcontroller for efficient and streamlined processing.

RAM Bytes: 8192

Sufficient RAM capacity for data storage and processing.

Technology: CMOS

CMOS technology for low power consumption and high noise immunity.

Terminal Form: NO LEAD

No-lead terminal form for easy surface mount assembly.

Maximum Supply Current: 110 mA

Low supply current for efficient power usage.

Nominal Supply Voltage: 3.3 V

Stable and common nominal supply voltage for reliable operation.

PWM Channels: YES

Pulse Width Modulation (PWM) channels for precise control of digital signals.

ROM Programmability: FLASH

Flash ROM for programmability and easy reprogramming of firmware.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density PCB layout.

Speed: 50 rpm

Operates at 50 revolutions per minute for regular processing tasks.

No. of I/O Lines: 34

Sufficient number of input/output lines for versatile connectivity options.

Technical Specifications

Microcontrollers LM3S815-EGZ50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

34

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S815-EGZ50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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